Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18824515 | APPARATUSES AND METHODS FOR PARTIAL ARRAY SELF REFRESH MASKING | September 2024 | March 2026 | Allow | 18 | 0 | 0 | No | No |
| 18822985 | BITLINE SENSE AMPLIFIERS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME | September 2024 | March 2026 | Allow | 18 | 0 | 0 | No | No |
| 18796143 | MEMORY WITH DOUBLE REDUNDANCY | August 2024 | March 2026 | Allow | 19 | 0 | 0 | No | No |
| 18791722 | MEMORY DEVICE, METHOD OF OPERATING THE MEMORY DEVICE, AND MEMORY SYSTEM | August 2024 | February 2026 | Allow | 19 | 0 | 0 | No | No |
| 18789680 | SEMICONDUCTOR MEMORY DEVICE WITH PROCESSING-IN-MEMORY USING TEST CIRCUITRY | July 2024 | February 2026 | Allow | 18 | 0 | 0 | No | No |
| 18787812 | CRITICAL TIMING DRIVEN ADAPTIVE VOLTAGE FREQUENCY SCALING | July 2024 | February 2026 | Allow | 19 | 0 | 0 | No | No |
| 18787957 | USING NON-SEGREGATED CELLS AS DRAIN-SIDE SELECT GATES FOR SUB-BLOCKS IN A MEMORY DEVICE | July 2024 | January 2026 | Allow | 18 | 0 | 0 | No | No |
| 18788001 | CAPACITANCE BALANCING IN SEMICONDUCTOR DEVICES | July 2024 | February 2026 | Allow | 18 | 0 | 0 | No | No |
| 18781317 | PARTIAL BLOCK ERASE OPERATIONS IN MEMORY DEVICES | July 2024 | January 2026 | Allow | 18 | 0 | 0 | No | No |
| 18771536 | ELECTRICAL FUSE BIT CELL IN INTEGRATED CIRCUIT HAVING BACKSIDE CONDUCTING LINES | July 2024 | February 2026 | Allow | 19 | 0 | 0 | No | No |
| 18771019 | SEMICONDUCTOR DEVICE | July 2024 | December 2025 | Allow | 17 | 0 | 0 | No | No |
| 18770632 | MANAGING PROGRAM DISTURB IN MEMORY DEVICES | July 2024 | January 2026 | Allow | 18 | 0 | 0 | No | No |
| 18768970 | SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE | July 2024 | December 2025 | Allow | 17 | 0 | 0 | No | No |
| 18765358 | NON-VOLATILE MEMORY WITH AUXILIARY SELECT GATE LINE DRIVER | July 2024 | December 2025 | Allow | 17 | 0 | 0 | No | No |
| 18765076 | WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES | July 2024 | January 2025 | Allow | 7 | 0 | 0 | No | No |
| 18755033 | DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES | June 2024 | January 2025 | Allow | 7 | 0 | 0 | No | No |
| 18753094 | NON-VOLATILE MEMORY AND CORRESPONDING MANUFACTURING METHOD | June 2024 | December 2025 | Allow | 17 | 0 | 0 | No | No |
| 18752870 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL ARRAY AND A CONTROL CIRCUIT APPLYING A READING VOLTAGE | June 2024 | February 2025 | Allow | 7 | 0 | 0 | No | No |
| 18750641 | MEMORY, OPERATION METHOD OF MEMORY, AND MEMORY SYSTEM | June 2024 | January 2026 | Allow | 19 | 0 | 0 | No | No |
| 18751094 | Truncated Resolution for Time Sliced Computation of Multiplication and Accumulation using a Memory Cell Array | June 2024 | January 2026 | Allow | 19 | 0 | 0 | No | No |
| 18741780 | MEMORY DEVICE AND DATA ACCESSING METHOD THEREOF | June 2024 | February 2026 | Allow | 20 | 0 | 0 | No | No |
| 18680395 | On-Die Termination of Address and Command Signals | May 2024 | January 2025 | Allow | 7 | 0 | 0 | No | No |
| 18677727 | MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM | May 2024 | December 2025 | Allow | 18 | 0 | 0 | No | No |
| 18675257 | MEMORY SYSTEM AND MEMORY DEVICE | May 2024 | January 2025 | Allow | 7 | 0 | 0 | No | No |
| 18663879 | DISCHARGE CIRCUITS FOR A NAND FLASH MEMORY | May 2024 | July 2025 | Allow | 14 | 0 | 0 | No | No |
| 18664199 | PROGRAMMING TECHNIQUES FOR POLARITY-BASED MEMORY CELLS | May 2024 | January 2025 | Allow | 8 | 0 | 0 | No | No |
| 18662709 | ONON Sidewall Structure for Memory Device and Method for Making the Same | May 2024 | December 2024 | Allow | 7 | 0 | 0 | No | No |
| 18662971 | SEMICONDUCTOR MEMORY DEVICE | May 2024 | December 2024 | Allow | 7 | 0 | 0 | No | No |
| 18661300 | AUTO-REFERENCED MEMORY CELL READ TECHNIQUES | May 2024 | December 2024 | Allow | 7 | 0 | 0 | No | No |
| 18653627 | NON-VOLATILE MEMORY DEVICES INCLUDING TWISTED BLOCK SELECT LINES | May 2024 | September 2025 | Allow | 17 | 0 | 0 | No | No |
| 18651261 | SMART PROLOGUE FOR NONVOLATILE MEMORY PROGRAM OPERATION | April 2024 | November 2024 | Allow | 7 | 0 | 0 | No | No |
| 18651510 | THREE-DIMENSIONAL NOR MEMORY ARRAY OF THIN-FILM FERROELECTRIC MEMORY TRANSISTORS IMPLEMENTING PARTIAL POLARIZATION | April 2024 | September 2025 | Allow | 17 | 0 | 0 | No | No |
| 18646059 | MEMORY COMPONENT WITH PROGRAMMABLE DATA-TO-CLOCK RATIO | April 2024 | November 2024 | Allow | 6 | 0 | 0 | No | No |
| 18643119 | DEVICE MODE TO IMPROVE DATA RETENTION FOR NAND MLC TECHNOLOGY | April 2024 | October 2025 | Allow | 18 | 0 | 0 | No | No |
| 18637829 | MEMORY DEVICES HAVING BUILT-IN POWER SUPPORTING CONTROL CIRCUITS THAT PROVIDE INCREASED PROGRAM AND READ RELIABILITY | April 2024 | September 2025 | Allow | 17 | 0 | 0 | No | No |
| 18632304 | MEMORY DEVICE | April 2024 | December 2025 | Allow | 20 | 0 | 0 | No | No |
| 18631556 | SEMICONDUCTOR MEMORY DEVICE | April 2024 | November 2025 | Allow | 19 | 0 | 0 | No | No |
| 18629205 | MEMORY ARRAY OF THREE-DIMENSIONAL NOR MEMORY STRINGS WITH WORD LINE SELECT DEVICE | April 2024 | September 2025 | Allow | 17 | 0 | 0 | No | No |
| 18604411 | BOOST-BY-DECK DURING A PROGRAM OPERATION ON A MEMORY DEVICE | March 2024 | August 2025 | Allow | 18 | 0 | 0 | No | No |
| 18602974 | SUB-BLOCK DEFINITION IN A MEMORY DEVICE USING SEGMENTED SOURCE PLATES | March 2024 | August 2025 | Allow | 18 | 0 | 0 | No | No |
| 18602709 | MEMORY DEVICE INCLUDING CHARGE PUMP, AND OPERATION METHOD OF THE MEMORY DEVICE | March 2024 | August 2025 | Allow | 18 | 0 | 0 | No | No |
| 18596150 | CELL CYCLING TO MINIMIZE RESISTIVE MEMORY RANDOM NUMBER CORRELATION | March 2024 | September 2024 | Allow | 6 | 0 | 0 | No | No |
| 18595188 | MEMORY AND OPERATING METHOD THEREOF | March 2024 | September 2024 | Allow | 7 | 0 | 0 | No | No |
| 18593979 | SEMICONDUCTOR DEVICE | March 2024 | November 2025 | Allow | 20 | 0 | 0 | No | No |
| 18443500 | MEMORY CELL | February 2024 | September 2025 | Allow | 19 | 0 | 0 | No | No |
| 18443992 | METHODS TO IMPROVE CURRENT CONSUMPTION AND READ TIME IN SUCCESSIVE READS | February 2024 | August 2025 | Allow | 18 | 0 | 0 | No | No |
| 18443010 | ERASE OPERATIONS IN MEMORY DEVICES | February 2024 | August 2025 | Allow | 18 | 0 | 0 | No | No |
| 18435089 | THREE-DIMENSIONAL MEMORY ARRAY, MEMORY SEARCHING ENGINE CIRCUIT AND ENCODING METHOD OF THE SAME | February 2024 | November 2025 | Allow | 21 | 0 | 0 | No | No |
| 18433421 | VOLTAGE CONTROL CIRCUIT MODULE, MEMORY STORAGE DEVICE AND VOLTAGE CONTROL METHOD | February 2024 | July 2025 | Allow | 18 | 0 | 0 | No | No |
| 18431582 | SUB-BLOCK SEPARATION IN NAND MEMORY THROUGH WORD LINE BASED SELECTORS | February 2024 | July 2025 | Allow | 18 | 0 | 0 | No | No |
| 18413596 | SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE | January 2024 | September 2025 | Allow | 20 | 0 | 0 | No | No |
| 18408680 | SEMICONDUCTOR DEVICE | January 2024 | November 2025 | Allow | 22 | 0 | 0 | No | No |
| 18405940 | MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERATING THE SAME | January 2024 | July 2025 | Allow | 18 | 0 | 0 | No | No |
| 18393067 | CURRENT MONITORING IN A MEMORY DEVICE TO IMPROVE SHORT DETECTION | December 2023 | October 2025 | Allow | 22 | 0 | 0 | No | No |
| 18544032 | MEMORY DEVICES AND OPERATING METHODS THEREOF, MEMORY SYSTEMS | December 2023 | August 2025 | Allow | 20 | 0 | 0 | No | No |
| 18542206 | MEMORY DEVICES, MEMORY SYSTEMS, AND METHODS FOR OPERATING MEMORY DEVICES | December 2023 | July 2025 | Allow | 19 | 0 | 0 | No | No |
| 18533007 | DOUBLE PROGRAM DEBUG METHOD FOR NAND MEMORY USING SELF-VERIFICATION BY INTERNAL FIRMWARE | December 2023 | September 2024 | Allow | 9 | 0 | 0 | No | No |
| 18531588 | Stochastic Memristive Devices Based on Arrays of Magnetic Tunnel Junctions | December 2023 | July 2025 | Allow | 20 | 0 | 0 | No | No |
| 18529115 | MULTI-WRITE READ-ONLY MEMORY ARRAY | December 2023 | June 2025 | Allow | 19 | 0 | 0 | No | No |
| 18529175 | REFRESH OPERATIONS IN EMBEDDED DYNAMIC RANDOM ACCESS MEMORIES (DRAMS) | December 2023 | June 2025 | Allow | 19 | 0 | 0 | No | No |
| 18521063 | MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE | November 2023 | June 2025 | Allow | 19 | 0 | 0 | No | No |
| 18519156 | INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR OPERATING THE SAME | November 2023 | June 2025 | Allow | 19 | 0 | 0 | No | No |
| 18515975 | MEMORY CONFIGURED TO PERFORM A CHANNEL PRECHARGE OPERATION AND METHOD OF OPERATING THE MEMORY | November 2023 | June 2025 | Allow | 19 | 0 | 0 | No | No |
| 18513319 | METHODS FOR ROW HAMMER MITIGATION AND MEMORY DEVICES AND SYSTEMS EMPLOYING THE SAME | November 2023 | July 2024 | Allow | 8 | 0 | 0 | No | No |
| 18509708 | VARIABLE FOGGY VERIFY LEVELS FOR SELECTED CHECKPOINT STATES FOR NON-VOLATILE MEMORY APPARATUSES | November 2023 | August 2025 | Allow | 21 | 0 | 0 | No | No |
| 18499797 | SUB-BLOCK SEPARATION IN NAND MEMORY THROUGH WORD LINE BASED SELECTORS | November 2023 | September 2025 | Allow | 23 | 0 | 0 | No | No |
| 18496660 | SINGLE-LEVEL CELL PROGRAMMING WITH ADAPTIVE WORDLINE RAMP RATE | October 2023 | May 2025 | Allow | 19 | 0 | 0 | No | No |
| 18494769 | MEMORY DEVICE PERMITTING OVERWRITE PROGRAM OPERATION AND OPERATION METHOD THEREOF | October 2023 | May 2025 | Allow | 19 | 0 | 0 | No | No |
| 18491452 | MEMORY, OPERATION METHODS THEREOF AND MEMORY SYSTEMS | October 2023 | February 2026 | Allow | 28 | 1 | 0 | Yes | No |
| 18489394 | MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE | October 2023 | August 2025 | Allow | 22 | 0 | 0 | No | No |
| 18489674 | ELECTRICAL FUSE BIT CELL IN INTEGRATED CIRCUIT HAVING BACKSIDE CONDUCTING LINES | October 2023 | May 2024 | Allow | 6 | 0 | 0 | No | No |
| 18488040 | INTEGRATED CIRCUIT AND MEMORY DEVICE INCLUDING SAMPLING CIRCUIT | October 2023 | June 2024 | Allow | 8 | 0 | 0 | No | No |
| 18479330 | TECHNIQUES TO COUPLE HIGH BANDWIDTH MEMORY DEVICE ON SILICON SUBSTRATE AND PACKAGE SUBSTRATE | October 2023 | May 2024 | Allow | 7 | 0 | 0 | No | No |
| 18477456 | METHOD OF PROGRAMMING FLASH MEMORY | September 2023 | May 2025 | Allow | 19 | 0 | 0 | No | No |
| 18474619 | MEMORY DEVICE AND OPERATING METHOD FOR MEMORY DEVICE | September 2023 | August 2025 | Allow | 22 | 0 | 0 | No | No |
| 18467793 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING A MEMORY CELL ARRAY AND A CONTROL CIRCUIT APPLYING A READING VOLTAGE | September 2023 | April 2024 | Allow | 7 | 0 | 0 | No | No |
| 18468078 | SEMICONDUCTOR INTEGRATED CIRCUIT | September 2023 | April 2024 | Allow | 7 | 0 | 0 | No | No |
| 18368446 | MEMORY DEVICE AND PRECHARGING METHOD THEREOF | September 2023 | June 2025 | Allow | 21 | 0 | 0 | No | No |
| 18464383 | METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME | September 2023 | April 2025 | Allow | 19 | 0 | 0 | No | No |
| 18462433 | MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME | September 2023 | June 2025 | Allow | 21 | 0 | 0 | No | No |
| 18242232 | MEMORY DEVICE AND OPERATING METHOD THEREOF | September 2023 | April 2025 | Allow | 19 | 0 | 0 | No | No |
| 18459501 | MEMORY SYSTEM | September 2023 | March 2024 | Allow | 7 | 0 | 0 | No | No |
| 18460496 | SEMICONDUCTOR STORAGE DEVICE | September 2023 | October 2025 | Allow | 25 | 0 | 0 | No | No |
| 18237815 | DYNAMIC LATCHES ABOVE A THREE-DIMENSIONAL NON-VOLATILE MEMORY ARRAY | August 2023 | May 2025 | Allow | 20 | 0 | 0 | No | No |
| 18452563 | METHOD OF PROGRAMMING MEMORY | August 2023 | May 2025 | Allow | 20 | 0 | 0 | No | No |
| 18451182 | MEMORY SYSTEM AND MEMORY DEVICE | August 2023 | February 2024 | Allow | 6 | 0 | 0 | No | No |
| 18450413 | MEMORY DEVICE FOR STORING PLURALITY OF DATA BITS AND METHOD OF OPERATING THE SAME | August 2023 | September 2025 | Allow | 25 | 0 | 1 | No | No |
| 18234356 | VOLTAGE REGULATION FOR MULTIPLE VOLTAGE LEVELS | August 2023 | April 2024 | Allow | 8 | 0 | 0 | No | No |
| 18234289 | LOW STRESS REFRESH ERASE IN A MEMORY DEVICE | August 2023 | April 2025 | Allow | 20 | 0 | 0 | No | No |
| 18365929 | MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM | August 2023 | February 2024 | Allow | 7 | 0 | 0 | No | No |
| 18229978 | SMART EARLY PROGRAM TERMINATION ALGORITHM FOR NEIGHBOR PLANE DISTURB COUNTERMEASURE | August 2023 | March 2025 | Allow | 20 | 0 | 0 | No | No |
| 18359764 | SEMICONDUCTOR MEMORY DEVICE | July 2023 | February 2024 | Allow | 7 | 0 | 0 | No | No |
| 18225253 | ON-CHIP PERFORMANCE THROTTLING | July 2023 | March 2025 | Allow | 20 | 0 | 0 | No | No |
| 18355343 | APPARATUS AND METHODS FOR SMART VERIFY WITH ADAPTIVE VOLTAGE OFFSET | July 2023 | March 2025 | Allow | 20 | 0 | 0 | No | No |
| 18353290 | MEMORY CELL WITH UNIPOLAR SELECTORS | July 2023 | September 2024 | Allow | 14 | 0 | 0 | No | No |
| 18351992 | THREE-DIMENSIONAL NOR ARRAY AND METHOD OF MAKING THE SAME | July 2023 | May 2025 | Allow | 22 | 1 | 0 | No | No |
| 18352025 | THREE-DIMENSIONAL NOR ARRAY AND METHOD OF MAKING THE SAME | July 2023 | May 2025 | Allow | 22 | 1 | 0 | No | No |
| 18346867 | HIGH VOLTAGE SWITCH CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME | July 2023 | October 2024 | Abandon | 15 | 1 | 0 | No | No |
| 18216513 | LOW POWER MEMORY CONTROL WITH ON-DEMAND BANDWIDTH BOOST | June 2023 | January 2024 | Allow | 7 | 0 | 0 | No | No |
| 18214466 | On-Die Termination of Address and Command Signals | June 2023 | January 2024 | Allow | 7 | 0 | 0 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner LAPPAS, JASON.
With a 25.0% reversal rate, the PTAB affirms the examiner's rejections in the vast majority of cases. This reversal rate is below the USPTO average, indicating that appeals face more challenges here than typical.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 41.4% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is above the USPTO average, suggesting that filing an appeal can be an effective strategy for prompting reconsideration.
⚠ Appeals to PTAB face challenges. Ensure your case has strong merit before committing to full Board review.
✓ Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.
Examiner LAPPAS, JASON works in Art Unit 2827 and has examined 1,142 patent applications in our dataset. With an allowance rate of 95.1%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 16 months.
Examiner LAPPAS, JASON's allowance rate of 95.1% places them in the 84% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.
On average, applications examined by LAPPAS, JASON receive 0.69 office actions before reaching final disposition. This places the examiner in the 4% percentile for office actions issued. This examiner issues significantly fewer office actions than most examiners.
The median time to disposition (half-life) for applications examined by LAPPAS, JASON is 16 months. This places the examiner in the 98% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.
Conducting an examiner interview provides a +3.4% benefit to allowance rate for applications examined by LAPPAS, JASON. This interview benefit is in the 26% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.
When applicants file an RCE with this examiner, 37.4% of applications are subsequently allowed. This success rate is in the 85% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.
This examiner enters after-final amendments leading to allowance in 29.7% of cases where such amendments are filed. This entry rate is in the 43% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.
When applicants request a pre-appeal conference (PAC) with this examiner, 120.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 82% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences are highly effective with this examiner compared to others. Before filing a full appeal brief, strongly consider requesting a PAC. The PAC provides an opportunity for the examiner and supervisory personnel to reconsider the rejection before the case proceeds to the PTAB.
This examiner withdraws rejections or reopens prosecution in 85.7% of appeals filed. This is in the 79% percentile among all examiners. Of these withdrawals, 66.7% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner frequently reconsiders rejections during the appeal process compared to other examiners. Per MPEP § 1207.01, all appeals must go through a mandatory appeal conference. Filing a Notice of Appeal may prompt favorable reconsideration even before you file an Appeal Brief.
When applicants file petitions regarding this examiner's actions, 19.8% are granted (fully or in part). This grant rate is in the 10% percentile among all examiners. Strategic Note: Petitions are rarely granted regarding this examiner's actions compared to other examiners. Ensure you have a strong procedural basis before filing a petition, as the Technology Center Director typically upholds this examiner's decisions.
Examiner's Amendments: This examiner makes examiner's amendments in 6.1% of allowed cases (in the 88% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.2% of allowed cases (in the 52% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.