USPTO Examiner SMET UYEN TRAN - Art Unit 2824

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
18591728SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAMEFebruary 2024September 2024Allow700NoNo
18431361SEMICONDUCTOR STORAGE DEVICE AND CONTROLLERFebruary 2024February 2025Allow1310NoNo
18426905INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, AND SEMICONDUCTOR STORAGE DEVICEJanuary 2024August 2024Allow700NoNo
18425619MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNITJanuary 2024September 2024Allow810NoNo
18522128MEMORY ACCESS MODULE FOR PERFORMING A PLURALITY OF SENSING OPERATIONS TO GENERATE DIGITAL VALUES OF A STORAGE CELL IN ORDER TO PERFORM DECODING OF THE STORAGE CELLNovember 2023December 2024Allow1210NoNo
18522111PAGE WRITE REQUIREMENTS FOR A DISTRIBUTED STORAGE SYSTEMNovember 2023April 2025Allow1720YesNo
18506293APPARATUS FOR OUTPUTTING INTERNAL STATE OF MEMORY APPARATUS AND MEMORY SYSTEM USING THE APPARATUSNovember 2023September 2024Allow1010NoNo
18496887Memory Systems, Modules, and Methods for Improved CapacityOctober 2023March 2025Allow1620NoNo
18475172ELECTRONIC DEVICE AND CONTROL METHOD FOR MEMORY REFRESH OPERATION THEREOFSeptember 2023June 2025Allow2100NoNo
18461374MEMORY SYSTEM AND METHOD FOR CONTROLLING THE SAMESeptember 2023April 2025Allow1900NoNo
18362952MEMORY CIRCUIT AND METHOD OF OPERATING SAMEJuly 2023January 2025Allow1710NoNo
18357339NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATEJuly 2023May 2025Allow2200NoNo
18330120MEMORY SYSTEM, MEMORY AND MEMORY CONTROL METHODJune 2023June 2025Allow2510YesNo
18318417SEMICONDUCTOR STORAGE DEVICEMay 2023January 2024Allow800NoNo
18301482INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, AND SEMICONDUCTOR STORAGE DEVICEApril 2023November 2023Allow700NoNo
18301377NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOFApril 2023February 2024Allow1010YesNo
18134719SEMICONDUCTOR MEMORYApril 2023February 2024Allow1010NoNo
18170257MAGNETIC STORAGE DEVICE AND CONTROL METHOD OF MAGNETIC STORAGE DEVICEFebruary 2023December 2024Allow2230NoNo
18064303IMS MEMORY CELL, IMS METHOD AND IMS MEMORY DEVICEDecember 2022March 2025Allow2700NoNo
18078456MULTI STAGE CHARGE PUMP CIRCUITS AND SEMICONDUCTOR MEMORY DEVICES INCLUDING THE SAMEDecember 2022June 2025Allow3001NoNo
17992035MEMORY SUB-SYSTEM SCANNovember 2022July 2024Allow2020YesNo
17978890COPYBACK CLEAR COMMAND FOR PERFORMING A SCAN AND READ IN A MEMORY DEVICENovember 2022May 2024Allow1900NoNo
17970756CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICEOctober 2022March 2024Allow1620NoNo
17965004PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAMEOctober 2022September 2024Allow2310YesNo
17962302SEMICONDUCTOR STORAGE DEVICE AND CONTROLLEROctober 2022October 2023Allow1310NoNo
17960598SEMICONDUCTOR APPARATUSOctober 2022January 2024Allow1520NoNo
17960524SEMICONDUCTOR APPARATUSOctober 2022May 2024Abandon1920NoNo
17958940STORAGE DEVICE AND STORAGE DEVICE ASSEMBLY USING THE SAMEOctober 2022June 2025Allow3210YesNo
17954655SEMICONDUCTOR MEMORY DEVICESeptember 2022May 2025Allow3220NoNo
17952857NON-VOLATILE MEMORY WITH SUB-PLANES HAVING INDIVIDUALLY BIASABLE SOURCE LINESSeptember 2022March 2025Allow3010YesNo
17934185SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORYSeptember 2022April 2024Allow1900NoNo
17932691MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYERSeptember 2022May 2025Allow3220YesNo
17944691MEMORY REPAIR SYSTEM AND METHODSeptember 2022March 2025Allow3010NoNo
17931464MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBINGSeptember 2022July 2024Allow2300NoNo
17901485SEMICONDUCTOR MEMORY DEVICESeptember 2022January 2025Allow2810NoNo
17897854IN-PLACE WRITE TECHNIQUES WITHOUT ERASE IN A MEMORY DEVICEAugust 2022May 2025Allow3220YesNo
17891852ADAPTIVE INTEGRITY SCAN IN A MEMORY SUB-SYSTEMAugust 2022April 2025Allow3230YesNo
17889106SEMICONDUCTOR INTEGRATED CIRCUIT DEVICEAugust 2022April 2024Allow2000NoNo
17889154APPARATUSES, SYSTEMS, AND METHODS FOR FREQUENCY-DEPENDENT SIGNAL MODULATIONAugust 2022April 2024Allow2010NoNo
17883546NEURAL NETWORK BASED METHOD AND DEVICEAugust 2022May 2025Allow3430NoNo
17873716REDUCING PROGRAM VERIFIES FOR MULTI-LEVEL NAND CELLSJuly 2022September 2023Allow1410NoNo
17873991PERFORMING SENSE OPERATIONS IN MEMORYJuly 2022January 2025Allow2910NoNo
17862006DIE-BASED HIGH AND LOW PRIORITY ERROR QUEUESJuly 2022November 2024Allow2840YesNo
17862082DIFFERENTIAL STROBE FAULT INDICATIONJuly 2022February 2025Allow3120NoNo
17858374MEMORY SYSTEM PERFORMING PERFORMANCE ADJUSTING OPERATIONJuly 2022June 2025Allow3540YesNo
17854146CONTROL CIRCUIT AND SEMICONDUCTOR MEMORYJune 2022July 2024Allow2510NoNo
17851530METHOD FOR DETECTING MEMORY DEVICE, COMPUTER STORAGE MEDIUM, AND ELECTRONIC DEVICEJune 2022February 2024Allow1900NoNo
17848599Turbo Mode SRAM for High PerformanceJune 2022August 2024Allow2630YesNo
17847545NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAMEJune 2022July 2024Allow2510YesNo
17842516SEMICONDUCTOR MEMORY DEVICE AND METHODJune 2022January 2024Allow1900NoNo
17806333STORAGE DEVICE AND OPERATING METHOD THEREOFJune 2022September 2024Allow2810YesNo
17806003DETECTION CIRCUITJune 2022July 2023Allow1410NoNo
17834024NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAMEJune 2022June 2024Allow2431YesNo
17832680MEMORY ACCESS MODULE FOR PERFORMING A PLURALITY OF SENSING OPERATIONS TO GENERATE DIGITAL VALUES OF A STORAGE CELL IN ORDER TO PERFORM DECODING OF THE STORAGE CELLJune 2022September 2023Allow1510NoNo
17830042DECODER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY DEVICESJune 2022October 2024Allow2910NoNo
17828273SENSE AMPLIFIER CIRCUIT, METHOD FOR OPERATING SAME, AND FABRICATION METHOD FOR SAMEMay 2022June 2024Allow2511NoNo
17828017ANTI-FUSE READOUT CIRCUIT, ANTI-FUSE MEMORY, AND TESTING METHODMay 2022June 2024Allow2510NoNo
17827997TEST METHOD, COMPUTER APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUMMay 2022July 2024Allow2510NoNo
17824738MEMORY DEVICE WITH RESET VOLTAGE CONTROLMay 2022December 2024Allow3120NoNo
17664465High-Density Memory Cells and Layouts ThereofMay 2022March 2024Allow2211NoNo
17745262TEMPERATURE INFORMED MEMORY REFRESHMay 2022September 2023Allow1610NoNo
17743493MEMORY DEVICE AND OPERATION METHOD THEREOFMay 2022April 2024Allow2310YesNo
17742345Determine Optimized Read Voltage via Identification of Distribution Shape of Signal and Noise CharacteristicsMay 2022September 2024Allow2940NoNo
17737781ADAPTIVE DSP GENERATION OF READ THRESHOLDS FOR GAUSSIAN AND NON-GAUSSIAN DISTRIBUTIONS IN SOLID STATE STORAGE USING CUMULATIVE OBSERVED COUNTSMay 2022September 2024Allow2810NoNo
17730973ERROR CONTROL FOR MEMORY DEVICEApril 2022March 2025Allow3530NoNo
17728792THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR DETECTING LEAKAGE STATEApril 2022August 2024Allow2720NoNo
17725144ARCHITECTURE AND METHOD FOR NAND MEMORY PROGRAMMINGApril 2022November 2023Allow1910NoNo
17725110TECHNIQUES FOR SATURATING A HOST INTERFACEApril 2022July 2023Allow1500NoNo
17719628SEMICONDUCTOR ELEMENT MEMORY DEVICEApril 2022August 2023Allow1610NoNo
17704747PAGE WRITE REQUIREMENTS FOR DIFFERING TYPES OF FLASH MEMORYMarch 2022August 2023Allow1710NoNo
17690698ARCHITECTURE FOR FAST CONTENT ADDRESSABLE MEMORY SEARCHMarch 2022April 2023Allow1410NoNo
17677332DETECTING FAILURE OF A THERMAL SENSOR IN A MEMORY DEVICEFebruary 2022June 2023Allow1600NoNo
17675468TEMPERATURE DIFFERENTIAL-BASED VOLTAGE OFFSET CONTROLFebruary 2022February 2024Allow2410YesNo
17669810TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORYFebruary 2022July 2023Allow1710YesNo
17669565COMPARISON SYSTEMFebruary 2022January 2024Allow2310NoNo
17668884EMBEDDED FLASH MEMORY AND WRITE OPERATION METHOD THEREOFFebruary 2022March 2025Allow3721YesNo
17589973NON-VOLATILE MEMORY WITH REDUNDANT CONTROL LINE DRIVERFebruary 2022December 2023Allow2310NoNo
17589580LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELLJanuary 2022April 2024Allow2621NoNo
17589590LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELLJanuary 2022February 2024Allow2520NoNo
17580178MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNITJanuary 2022October 2023Allow2110YesNo
17648311NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND OPERATING METHOD THEREOFJanuary 2022September 2024Allow3230YesNo
17568676SEMICONDUCTOR MEMORY APPARATUSJanuary 2022January 2024Allow2510NoNo
17565119APPARATUSES AND METHODS FOR ROW HAMMER COUNTER MATDecember 2021July 2024Allow3111NoNo
17562123SENSE AMPLIFIER STRUCTURE FOR NON-VOLATILE MEMORY WITH NEIGHBOR BIT LINE LOCAL DATA BUS DATA TRANSFERDecember 2021December 2023Allow2310YesNo
17561016STRING OR BLOCK OR DIE LEVEL DEPENDENT SOURCE LINE VOLTAGE FOR NEIGHBOR DRAIN SIDE SELECT GATE INTERFERENCE COMPENSATIONDecember 2021July 2023Allow1900NoNo
17559998MEMORY DEVICE AND REFERENCE CIRCUIT THEREOFDecember 2021August 2023Allow1910NoNo
17552844RADIATION HARDENED E-FUSE MACRODecember 2021May 2024Allow2911NoNo
17533292MEMORY DEVICE THAT IS OPTIMIZED FOR OPERATION AT DIFFERENT TEMPERATURESNovember 2021December 2023Allow2510NoNo
17530676PREVENTING PARASITIC CURRENT DURING PROGRAM OPERATIONS IN MEMORYNovember 2021February 2024Allow2720NoNo
17529261MEMORY CELL WITH BUILT-IN AMPLIFYING FUNCTION, MEMORY DEVICE AND METHOD USING THE SAMENovember 2021December 2023Allow2520NoNo
17524771CAM CELL, CAM DEVICE AND OPERATION METHOD THEREOF, AND METHOD FOR SEARCHING AND COMPARING DATANovember 2021April 2024Allow2921YesNo
17523337SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAMENovember 2021November 2023Allow2410YesNo
17518316SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICENovember 2021July 2024Allow3230NoNo
17511802NON-VOLATILE MEMORY AND PROGRAMMING METHOD THEREOFOctober 2021April 2024Allow2930YesNo
17510020FUNCTIONAL SIGNAL LINE OVERDRIVEOctober 2021November 2023Allow2520NoNo
17509941Cross-Point Array of Polymer Junctions with Individually-Programmed ConductancesOctober 2021October 2023Allow2410YesNo
17485652SENSE AMPLIFIER, SEMICONDUCTOR DEVICE, OPERATION METHOD THEREOF, AND ELECTRONIC DEVICESeptember 2021March 2024Allow2920NoNo
17470655CHARGE-MIRROR BASED SENSING FOR FERROELECTRIC MEMORYSeptember 2021February 2024Allow3020NoNo
17460701RECEIVER TRAINING OF REFERENCE VOLTAGE AND EQUALIZER COEFFICIENTSAugust 2021June 2023Allow2210NoNo
17434586METHOD AND DEVICE FOR OPERATING A NONVOLATILE MEMORY DEVICEAugust 2021February 2024Abandon3010NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner SMET, UYEN TRAN.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
1
Examiner Affirmed
0
(0.0%)
Examiner Reversed
1
(100.0%)
Reversal Percentile
94.9%
Higher than average

What This Means

With a 100.0% reversal rate, the PTAB has reversed the examiner's rejections more often than affirming them. This reversal rate is in the top 25% across the USPTO, indicating that appeals are more successful here than in most other areas.

Strategic Value of Filing an Appeal

Total Appeal Filings
4
Allowed After Appeal Filing
1
(25.0%)
Not Allowed After Appeal Filing
3
(75.0%)
Filing Benefit Percentile
32.0%
Lower than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 25.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is below the USPTO average, suggesting that filing an appeal has limited effectiveness in prompting favorable reconsideration.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.

Examiner SMET, UYEN TRAN - Prosecution Strategy Guide

Executive Summary

Examiner SMET, UYEN TRAN works in Art Unit 2824 and has examined 693 patent applications in our dataset. With an allowance rate of 94.4%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 18 months.

Allowance Patterns

Examiner SMET, UYEN TRAN's allowance rate of 94.4% places them in the 84% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by SMET, UYEN TRAN receive 1.33 office actions before reaching final disposition. This places the examiner in the 26% percentile for office actions issued. This examiner issues fewer office actions than average, which may indicate efficient prosecution or a more lenient examination style.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by SMET, UYEN TRAN is 18 months. This places the examiner in the 94% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a +4.0% benefit to allowance rate for applications examined by SMET, UYEN TRAN. This interview benefit is in the 26% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 33.9% of applications are subsequently allowed. This success rate is in the 68% percentile among all examiners. Strategic Insight: RCEs show above-average effectiveness with this examiner. Consider whether your amendments or new arguments are strong enough to warrant an RCE versus filing a continuation.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 55.3% of cases where such amendments are filed. This entry rate is in the 77% percentile among all examiners. Strategic Recommendation: This examiner is highly receptive to after-final amendments compared to other examiners. Per MPEP § 714.12, after-final amendments may be entered "under justifiable circumstances." Consider filing after-final amendments with a clear showing of allowability rather than immediately filing an RCE, as this examiner frequently enters such amendments.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 0.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 12% percentile among all examiners. Note: Pre-appeal conferences show limited success with this examiner compared to others. While still worth considering, be prepared to proceed with a full appeal brief if the PAC does not result in favorable action.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 80.0% of appeals filed. This is in the 69% percentile among all examiners. Of these withdrawals, 25.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.

Petition Practice

When applicants file petitions regarding this examiner's actions, 37.8% are granted (fully or in part). This grant rate is in the 35% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 0.1% of allowed cases (in the 47% percentile). This examiner makes examiner's amendments less often than average. You may need to make most claim amendments yourself.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.6% of allowed cases (in the 51% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Consider after-final amendments: This examiner frequently enters after-final amendments. If you can clearly overcome rejections with claim amendments, file an after-final amendment before resorting to an RCE.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.