USPTO Examiner SMET UYEN TRAN - Art Unit 2824

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
18619466BUILT-IN SELF-TEST CIRCUITRY FOR DATA IN PATH FOR NON-VOLATILE MEMORY WITH MULTIPLE TEST CLOCK SPEEDS FOR MULTIPLE TEST MODESMarch 2024September 2025Allow1700NoNo
18591728SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAMEFebruary 2024September 2024Allow700NoNo
18442693SINGLE-LEVEL MEMORY CELL ERROR ON-CHIP DETECTIONFebruary 2024March 2026Allow2510NoNo
18431361SEMICONDUCTOR STORAGE DEVICE AND CONTROLLERFebruary 2024February 2025Allow1310NoNo
18426905INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, AND SEMICONDUCTOR STORAGE DEVICEJanuary 2024August 2024Allow700NoNo
18425619MANAGING THE PROGRAMMING OF AN OPEN TRANSLATION UNITJanuary 2024September 2024Allow810NoNo
18417389NON-VOLATILE MEMORY CELL OF ARRAY STRUCTURE AND ASSOCIATED CONTROLLING METHODJanuary 2024November 2025Allow2210NoNo
18403471MEMORY DEVICE, MEMORY SYSTEM AND OPERATION METHOD THEREOFJanuary 2024November 2025Allow2210NoNo
18527658BITLINE VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICEDecember 2023March 2026Allow2720YesNo
18527693PROGRAM VERIFY LEVEL ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICEDecember 2023March 2026Allow2720YesNo
18522128MEMORY ACCESS MODULE FOR PERFORMING A PLURALITY OF SENSING OPERATIONS TO GENERATE DIGITAL VALUES OF A STORAGE CELL IN ORDER TO PERFORM DECODING OF THE STORAGE CELLNovember 2023December 2024Allow1210NoNo
18522111PAGE WRITE REQUIREMENTS FOR A DISTRIBUTED STORAGE SYSTEMNovember 2023April 2025Allow1720YesNo
18506293APPARATUS FOR OUTPUTTING INTERNAL STATE OF MEMORY APPARATUS AND MEMORY SYSTEM USING THE APPARATUSNovember 2023September 2024Allow1010NoNo
18496887Memory Systems, Modules, and Methods for Improved CapacityOctober 2023March 2025Allow1620NoNo
18489454VOLTAGE REGULATOR SUPPLY FOR INDEPENDENT WORDLINE READSOctober 2023October 2025Allow2410NoNo
18485040PAGE BUFFER, SEMICONDUCTOR DEVICE INCLUDING THE PAGE BUFFER, AND OPERATING METHOD OF THE SEMICONDUCTOR DEVICEOctober 2023March 2026Allow2920NoNo
18375573SEMICONDUCTOR DEVICE PERFORMING ARITHMETIC OPERATIONOctober 2023September 2025Allow2320NoNo
18374686DEVICES AND METHODS FOR READING A MEMRISTIVE ELEMENTSeptember 2023February 2026Allow2910NoNo
18475172ELECTRONIC DEVICE AND CONTROL METHOD FOR MEMORY REFRESH OPERATION THEREOFSeptember 2023June 2025Allow2100NoNo
18243314PROGRAMMING TECHNIQUES TO IMPROVE ERASE STATE UPPER TAILS IN A MEMORY DEVICESeptember 2023August 2025Allow2410NoNo
18461374MEMORY SYSTEM AND METHOD FOR CONTROLLING THE SAMESeptember 2023April 2025Allow1900NoNo
18459606SEMICONDUCTOR MEMORY DEVICESeptember 2023August 2025Allow2310NoNo
18239302Data Storage Device and Method for Inferring a Read Threshold Using a Time Tag DeterminationAugust 2023September 2025Allow2530YesNo
18229294PROGRAM VERIFY WORD LINE RAMPING DELAY FOR LOWER CURRENT CONSUMPTION MODEAugust 2023August 2025Allow2410NoNo
18362952MEMORY CIRCUIT AND METHOD OF OPERATING SAMEJuly 2023January 2025Allow1710NoNo
18360327MEMORY PROGRAM-VERIFY WITH ADAPTIVE SENSE TIME BASED ON DISTANCE FROM A WORD LINE DRIVERJuly 2023March 2026Abandon3120YesNo
18357339NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATEJuly 2023May 2025Allow2200NoNo
18330120MEMORY SYSTEM, MEMORY AND MEMORY CONTROL METHODJune 2023June 2025Allow2510YesNo
18318417SEMICONDUCTOR STORAGE DEVICEMay 2023January 2024Allow800NoNo
18301377NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOFApril 2023February 2024Allow1010YesNo
18301482INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, AND SEMICONDUCTOR STORAGE DEVICEApril 2023November 2023Allow700NoNo
18134719SEMICONDUCTOR MEMORYApril 2023February 2024Allow1010NoNo
18170257MAGNETIC STORAGE DEVICE AND CONTROL METHOD OF MAGNETIC STORAGE DEVICEFebruary 2023December 2024Allow2230NoNo
18109029MONOTONIC COUNTER IMPLEMENTED IN NON-VOLATILE RESISTIVE SWITCHING MEMORYFebruary 2023July 2025Allow2901NoNo
18064303IMS MEMORY CELL, IMS METHOD AND IMS MEMORY DEVICEDecember 2022March 2025Allow2700NoNo
18078456MULTI STAGE CHARGE PUMP CIRCUITS AND SEMICONDUCTOR MEMORY DEVICES INCLUDING THE SAMEDecember 2022June 2025Allow3001NoNo
18076932MEMORY DEVICE AND REFRESH METHOD THEREOFDecember 2022August 2025Allow3211YesNo
17992035MEMORY SUB-SYSTEM SCANNovember 2022July 2024Allow2020YesNo
17978890COPYBACK CLEAR COMMAND FOR PERFORMING A SCAN AND READ IN A MEMORY DEVICENovember 2022May 2024Allow1900NoNo
17972858APPARATUS AND METHOD CONTROLLING PEAK TO PEAK RIPPLE OF CHARGE PUMP OUTPUT VOLTAGEOctober 2022March 2026Allow4030YesNo
17970756CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICEOctober 2022March 2024Allow1620NoNo
17965004PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAMEOctober 2022September 2024Allow2310YesNo
17962302SEMICONDUCTOR STORAGE DEVICE AND CONTROLLEROctober 2022October 2023Allow1310NoNo
17960524SEMICONDUCTOR APPARATUSOctober 2022May 2024Abandon1920NoNo
17960598SEMICONDUCTOR APPARATUSOctober 2022January 2024Allow1520NoNo
17958940STORAGE DEVICE AND STORAGE DEVICE ASSEMBLY USING THE SAMEOctober 2022June 2025Allow3210YesNo
17954655SEMICONDUCTOR MEMORY DEVICESeptember 2022May 2025Allow3220NoNo
17952857NON-VOLATILE MEMORY WITH SUB-PLANES HAVING INDIVIDUALLY BIASABLE SOURCE LINESSeptember 2022March 2025Allow3010YesNo
17934185SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORYSeptember 2022April 2024Allow1900NoNo
17932691MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYERSeptember 2022May 2025Allow3220YesNo
17944691MEMORY REPAIR SYSTEM AND METHODSeptember 2022March 2025Allow3010NoNo
17931464MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBINGSeptember 2022July 2024Allow2300NoNo
17929450INPUT/OUTPUT REFERENCE VOLTAGE TRAINING METHOD IN THREE-DIMENSIONAL MEMORY DEVICESSeptember 2022July 2025Allow3430YesNo
17901485SEMICONDUCTOR MEMORY DEVICESeptember 2022January 2025Allow2810NoNo
17897854IN-PLACE WRITE TECHNIQUES WITHOUT ERASE IN A MEMORY DEVICEAugust 2022May 2025Allow3220YesNo
17891852ADAPTIVE INTEGRITY SCAN IN A MEMORY SUB-SYSTEMAugust 2022April 2025Allow3230YesNo
17889154APPARATUSES, SYSTEMS, AND METHODS FOR FREQUENCY-DEPENDENT SIGNAL MODULATIONAugust 2022April 2024Allow2010NoNo
17889106SEMICONDUCTOR INTEGRATED CIRCUIT DEVICEAugust 2022April 2024Allow2000NoNo
17887244VOLTAGE WINDOW ADJUSTMENTAugust 2022October 2025Allow3821YesNo
17798619CONSTANT VOLTAGE GENERATION CIRCUITAugust 2022July 2025Abandon3621NoNo
17883546NEURAL NETWORK BASED METHOD AND DEVICEAugust 2022May 2025Allow3430NoNo
17873716REDUCING PROGRAM VERIFIES FOR MULTI-LEVEL NAND CELLSJuly 2022September 2023Allow1410NoNo
17873991PERFORMING SENSE OPERATIONS IN MEMORYJuly 2022January 2025Allow2910NoNo
17813515APPARATUSES AND METHODS FOR REPAIRING MULTIPLE BIT LINES WITH A SAME COLUMN SELECT VALUEJuly 2022October 2025Allow3931YesNo
17862082DIFFERENTIAL STROBE FAULT INDICATIONJuly 2022February 2025Allow3120NoNo
17862006DIE-BASED HIGH AND LOW PRIORITY ERROR QUEUESJuly 2022November 2024Allow2840YesNo
17858374MEMORY SYSTEM PERFORMING PERFORMANCE ADJUSTING OPERATIONJuly 2022June 2025Allow3540YesNo
17854146CONTROL CIRCUIT AND SEMICONDUCTOR MEMORYJune 2022July 2024Allow2510NoNo
17851530METHOD FOR DETECTING MEMORY DEVICE, COMPUTER STORAGE MEDIUM, AND ELECTRONIC DEVICEJune 2022February 2024Allow1900NoNo
17848599Turbo Mode SRAM for High PerformanceJune 2022August 2024Allow2630YesNo
17847545NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAMEJune 2022July 2024Allow2510YesNo
17842516SEMICONDUCTOR MEMORY DEVICE AND METHODJune 2022January 2024Allow1900NoNo
17806333STORAGE DEVICE AND OPERATING METHOD THEREOFJune 2022September 2024Allow2810YesNo
17806003DETECTION CIRCUITJune 2022July 2023Allow1410NoNo
17834024NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAMEJune 2022June 2024Allow2431YesNo
17832680MEMORY ACCESS MODULE FOR PERFORMING A PLURALITY OF SENSING OPERATIONS TO GENERATE DIGITAL VALUES OF A STORAGE CELL IN ORDER TO PERFORM DECODING OF THE STORAGE CELLJune 2022September 2023Allow1510NoNo
17830042DECODER ARCHITECTURES FOR THREE-DIMENSIONAL MEMORY DEVICESJune 2022October 2024Allow2910NoNo
17828273SENSE AMPLIFIER CIRCUIT, METHOD FOR OPERATING SAME, AND FABRICATION METHOD FOR SAMEMay 2022June 2024Allow2511NoNo
17827997TEST METHOD, COMPUTER APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUMMay 2022July 2024Allow2510NoNo
17828017ANTI-FUSE READOUT CIRCUIT, ANTI-FUSE MEMORY, AND TESTING METHODMay 2022June 2024Allow2510NoNo
17824738MEMORY DEVICE WITH RESET VOLTAGE CONTROLMay 2022December 2024Allow3120NoNo
17664465High-Density Memory Cells and Layouts ThereofMay 2022March 2024Allow2211NoNo
17745262TEMPERATURE INFORMED MEMORY REFRESHMay 2022September 2023Allow1610NoNo
17743493MEMORY DEVICE AND OPERATION METHOD THEREOFMay 2022April 2024Allow2310YesNo
17742345Determine Optimized Read Voltage via Identification of Distribution Shape of Signal and Noise CharacteristicsMay 2022September 2024Allow2940NoNo
17737781ADAPTIVE DSP GENERATION OF READ THRESHOLDS FOR GAUSSIAN AND NON-GAUSSIAN DISTRIBUTIONS IN SOLID STATE STORAGE USING CUMULATIVE OBSERVED COUNTSMay 2022September 2024Allow2810NoNo
17730973ERROR CONTROL FOR MEMORY DEVICEApril 2022March 2025Allow3530NoNo
17728792THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR DETECTING LEAKAGE STATEApril 2022August 2024Allow2720NoNo
17725144ARCHITECTURE AND METHOD FOR NAND MEMORY PROGRAMMINGApril 2022November 2023Allow1910NoNo
17725110TECHNIQUES FOR SATURATING A HOST INTERFACEApril 2022July 2023Allow1500NoNo
17719628SEMICONDUCTOR ELEMENT MEMORY DEVICEApril 2022August 2023Allow1610NoNo
17704747PAGE WRITE REQUIREMENTS FOR DIFFERING TYPES OF FLASH MEMORYMarch 2022August 2023Allow1710NoNo
17690698ARCHITECTURE FOR FAST CONTENT ADDRESSABLE MEMORY SEARCHMarch 2022April 2023Allow1410NoNo
17677332DETECTING FAILURE OF A THERMAL SENSOR IN A MEMORY DEVICEFebruary 2022June 2023Allow1600NoNo
17675468TEMPERATURE DIFFERENTIAL-BASED VOLTAGE OFFSET CONTROLFebruary 2022February 2024Allow2410YesNo
17669810TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORYFebruary 2022July 2023Allow1710YesNo
17669565COMPARISON SYSTEMFebruary 2022January 2024Allow2310NoNo
17668884EMBEDDED FLASH MEMORY AND WRITE OPERATION METHOD THEREOFFebruary 2022March 2025Allow3721YesNo
17650418FLASH MEMORY CELL STRUCTURE HAVING SEPARATE PROGRAM AND ERASE ELECTRON PATHSFebruary 2022October 2025Allow4440NoNo
17589973NON-VOLATILE MEMORY WITH REDUNDANT CONTROL LINE DRIVERFebruary 2022December 2023Allow2310NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner SMET, UYEN TRAN.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
2
Examiner Affirmed
1
(50.0%)
Examiner Reversed
1
(50.0%)
Reversal Percentile
74.5%
Higher than average

What This Means

With a 50.0% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.

Strategic Value of Filing an Appeal

Total Appeal Filings
5
Allowed After Appeal Filing
1
(20.0%)
Not Allowed After Appeal Filing
4
(80.0%)
Filing Benefit Percentile
25.4%
Lower than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 20.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is below the USPTO average, suggesting that filing an appeal has limited effectiveness in prompting favorable reconsideration.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.

Examiner SMET, UYEN TRAN - Prosecution Strategy Guide

Executive Summary

Examiner SMET, UYEN TRAN works in Art Unit 2824 and has examined 616 patent applications in our dataset. With an allowance rate of 93.7%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 18 months.

Allowance Patterns

Examiner SMET, UYEN TRAN's allowance rate of 93.7% places them in the 81% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by SMET, UYEN TRAN receive 1.34 office actions before reaching final disposition. This places the examiner in the 20% percentile for office actions issued. This examiner issues significantly fewer office actions than most examiners.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by SMET, UYEN TRAN is 18 months. This places the examiner in the 96% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a +4.4% benefit to allowance rate for applications examined by SMET, UYEN TRAN. This interview benefit is in the 28% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 33.0% of applications are subsequently allowed. This success rate is in the 71% percentile among all examiners. Strategic Insight: RCEs show above-average effectiveness with this examiner. Consider whether your amendments or new arguments are strong enough to warrant an RCE versus filing a continuation.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 54.8% of cases where such amendments are filed. This entry rate is in the 81% percentile among all examiners. Strategic Recommendation: This examiner is highly receptive to after-final amendments compared to other examiners. Per MPEP § 714.12, after-final amendments may be entered "under justifiable circumstances." Consider filing after-final amendments with a clear showing of allowability rather than immediately filing an RCE, as this examiner frequently enters such amendments.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 0.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 13% percentile among all examiners. Note: Pre-appeal conferences show limited success with this examiner compared to others. While still worth considering, be prepared to proceed with a full appeal brief if the PAC does not result in favorable action.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 66.7% of appeals filed. This is in the 50% percentile among all examiners. Of these withdrawals, 25.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows below-average willingness to reconsider rejections during appeals. Be prepared to fully prosecute appeals if filed.

Petition Practice

When applicants file petitions regarding this examiner's actions, 38.6% are granted (fully or in part). This grant rate is in the 27% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 0.2% of allowed cases (in the 51% percentile). This examiner makes examiner's amendments more often than average to place applications in condition for allowance (MPEP § 1302.04).

Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.7% of allowed cases (in the 57% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Consider after-final amendments: This examiner frequently enters after-final amendments. If you can clearly overcome rejections with claim amendments, file an after-final amendment before resorting to an RCE.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.