Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18669140 | MULTI-STATE PROGRAMMING OF MEMORY CELLS | May 2024 | April 2025 | Allow | 11 | 1 | 0 | No | No |
| 18653418 | Multi-Bit Storage Device Using Phase Change Material | May 2024 | December 2024 | Allow | 7 | 0 | 0 | No | No |
| 18430136 | PROCESSING IN MEMORY | February 2024 | May 2025 | Allow | 15 | 1 | 0 | No | No |
| 18420073 | MEMORY CIRCUIT, SYSTEM AND METHOD FOR RAPID RETRIEVAL OF DATA SETS | January 2024 | August 2024 | Allow | 7 | 0 | 0 | No | No |
| 18413107 | RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND METHODS FOR FORMING THE SAME | January 2024 | May 2025 | Allow | 16 | 1 | 0 | No | No |
| 18517320 | CROSSBAR CIRCUITS FOR PERFORMING CONVOLUTION OPERATIONS | November 2023 | June 2025 | Allow | 19 | 0 | 0 | No | No |
| 18515649 | Memory System Having Combined High Density, Low Bandwidth and Low Density, High Bandwidth Memories | November 2023 | August 2024 | Allow | 9 | 0 | 0 | No | No |
| 18479836 | MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME | October 2023 | October 2024 | Allow | 12 | 1 | 0 | No | No |
| 18375869 | MULTI-GATE NOR FLASH THIN-FILM TRANSISTOR STRINGS ARRANGED IN STACKED HORIZONTAL ACTIVE STRIPS WITH VERTICAL CONTROL GATES | October 2023 | January 2025 | Allow | 16 | 2 | 0 | No | No |
| 18478776 | SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME | September 2023 | May 2024 | Allow | 8 | 0 | 0 | No | No |
| 18373741 | DATA INTEGRITY CHECKS BASED ON VOLTAGE DISTRIBUTION METRICS | September 2023 | February 2025 | Allow | 17 | 2 | 0 | Yes | No |
| 18467094 | MEMORY DEVICE DETERMINING TARGET RESISTANCE STATES | September 2023 | May 2025 | Allow | 20 | 0 | 0 | No | No |
| 18447232 | SEMICONDUCTOR DEVICES WITH A DOUBLE SIDED WORD LINE STRUCTURE | August 2023 | March 2025 | Allow | 19 | 1 | 0 | No | No |
| 18230450 | CHARGE PUMP SYSTEM WITH LOW RIPPLE OUTPUT VOLTAGE | August 2023 | September 2024 | Allow | 14 | 1 | 0 | No | No |
| 18362289 | SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SENSE AMPLIFIERS | July 2023 | July 2024 | Allow | 11 | 1 | 0 | No | No |
| 18333392 | STATIC RANDOM ACCESS MEMORY WITH A SUPPLEMENTARY DRIVER CIRCUIT AND METHOD OF CONTROLLING THE SAME | June 2023 | August 2024 | Allow | 14 | 1 | 0 | Yes | No |
| 18331746 | APPARATUSES AND METHODS FOR IN-MEMORY OPERATIONS | June 2023 | July 2024 | Allow | 13 | 1 | 0 | No | No |
| 18205417 | METHOD OF RRAM WRITE RAMPING VOLTAGE IN INTERVALS | June 2023 | February 2025 | Allow | 20 | 3 | 0 | Yes | No |
| 18321898 | PHASE CHANGE MATERIAL SWITCH CIRCUIT FOR ENHANCED SIGNAL ISOLATION AND METHODS OF FORMING THE SAME | May 2023 | June 2025 | Allow | 25 | 1 | 0 | No | No |
| 18317123 | PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION AND RESTRICTION OF THE PCM MATERIAL | May 2023 | February 2024 | Allow | 9 | 0 | 0 | No | No |
| 18317680 | ELECTRONIC DEVICE WITH VARIABLE RESISTANCE LAYERS AND INSULATING LAYERS ALTERNATELY STACKED AND METHOD OF MANUFACTURING THE SAME | May 2023 | April 2024 | Allow | 11 | 1 | 0 | No | No |
| 18247213 | MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STRUCTURE | March 2023 | February 2025 | Allow | 23 | 0 | 0 | No | No |
| 18188475 | MEMORY DEVICE AND MEMORY SYSTEM FOR USING READ COMPENSATION SCHEME AND OPERATING METHOD OF THE SAME | March 2023 | May 2025 | Allow | 26 | 1 | 0 | No | No |
| 18188729 | PHASE CHANGE MATERIAL INCLUDING DEUTERIUM | March 2023 | June 2025 | Allow | 27 | 1 | 0 | Yes | No |
| 18124576 | SEMICONDUCTOR DIE HAVING ON-DIE POWER SWITCH FOR SELECTING TARGET OPERATION VOLTAGE FROM OPERATION VOLTAGES PROVIDED BY DIFFERENT POWER SOURCES | March 2023 | May 2025 | Allow | 26 | 1 | 0 | No | No |
| 18182382 | LOW POWER MEMORY DEVICE WITH COLUMN AND ROW LINE SWITCHES FOR SPECIFIC MEMORY CELLS | March 2023 | September 2024 | Abandon | 18 | 1 | 1 | No | No |
| 18181851 | CHIP BONDED SEMICONDUCTOR MEMORY DEVICE WITH DIFFERENT CHARGE STORAGE FILMS | March 2023 | April 2025 | Allow | 25 | 0 | 1 | No | No |
| 18025009 | SEMICONDUCTOR DEVICE WITH FIRST AND SECOND ELEMENTS AND ELECTRONIC DEVICE | March 2023 | April 2025 | Allow | 26 | 1 | 0 | No | No |
| 18117108 | FERROELECTRIC-BASED SYNAPTIC DEVICE AND METHOD OF OPERATING THE SYNAPTIC DEVICE, AND 3D SYNAPTIC DEVICE STACK USING THE SYNAPTIC DEVICES | March 2023 | December 2024 | Allow | 21 | 1 | 0 | No | No |
| 18167819 | SIGNAL CONTROL CIRCUIT, SIGNAL CONTROL METHOD FOR BLOCKING ACTIVATION OPERATIONS AND SEMICONDUCTOR MEMORY | February 2023 | February 2025 | Allow | 24 | 1 | 0 | No | No |
| 18164657 | IN-DYNAMIC MEMORY SEARCH DEVICE AND OPERATION METHOD THEREOF | February 2023 | September 2024 | Allow | 19 | 0 | 0 | No | No |
| 18105935 | PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES | February 2023 | May 2024 | Allow | 15 | 1 | 0 | No | No |
| 18161915 | TWO TRANSISTOR MEMORY CELL USING STACKED THIN-FILM TRANSISTORS | January 2023 | October 2024 | Allow | 21 | 2 | 0 | Yes | No |
| 18100615 | SEMICONDUCTOR MEMORY DEVICE WITH A PLURALITY OF SENSE AMPILIFERS OVERLAPPING A PLURALITY OF METAL JOINTS | January 2023 | September 2023 | Allow | 8 | 1 | 0 | No | No |
| 18092115 | METHOD FOR LOCATING BOUNDARY PAGE LINE IN MEMORY DEVICE, MEMORY DEVICE, AND MEMORY SYSTEM THEREOF | December 2022 | January 2025 | Allow | 24 | 1 | 0 | Yes | No |
| 18081265 | SEMICONDUCTOR STORAGE DEVICE | December 2022 | July 2024 | Allow | 19 | 0 | 0 | No | No |
| 18077572 | SEMICONDUCTOR MEMORY DEVICE WITH VOLTAGES APPLIED TO GLOBAL DRAIN SELECT LINES AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE | December 2022 | December 2024 | Allow | 24 | 0 | 1 | No | No |
| 18076060 | VOLTAGE SUPPLY CIRCUIT WITH A VOLTAGE REGULATOR | December 2022 | November 2024 | Allow | 24 | 0 | 1 | No | No |
| 18059124 | MEMORY DEVICE AND TEST METHOD OF MEMORY DEVICE | November 2022 | December 2024 | Allow | 24 | 0 | 1 | No | No |
| 18055588 | APPARATUSES AND METHODS FOR INPUT BUFFER DATA FEEDBACK EQUALIZATION CIRCUITS | November 2022 | January 2025 | Allow | 26 | 1 | 0 | No | No |
| 17986628 | MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE FOR CONTROLLING A CHANNEL VOLTAGE | November 2022 | March 2025 | Allow | 28 | 2 | 0 | No | No |
| 17978144 | MEMORY CIRCUIT, SYSTEM AND METHOD FOR RAPID RETRIEVAL OF DATA SETS | October 2022 | October 2023 | Allow | 12 | 1 | 0 | No | No |
| 17968082 | VERTICAL MEMORY DEVICE WITH A DOUBLE WORD LINE STRUCTURE | October 2022 | June 2024 | Allow | 20 | 2 | 0 | No | No |
| 18045881 | SRAM WITH RECONFIGURABLE SETTING | October 2022 | March 2025 | Allow | 29 | 2 | 0 | No | No |
| 17955670 | SIGNAL DETECTION SYSTEM FOR DUTY CYCLE TESTING AND MEMORY DETECTION METHOD | September 2022 | November 2024 | Allow | 26 | 1 | 0 | No | No |
| 17934965 | MEMORY CIRCUIT, SYSTEM AND METHOD FOR RAPID RETRIEVAL OF DATA SETS | September 2022 | November 2023 | Allow | 13 | 1 | 0 | No | No |
| 17899974 | SEMICONDUCTOR MEMORY DEVICE | August 2022 | July 2024 | Allow | 23 | 0 | 0 | Yes | No |
| 17900228 | SEMICONDUCTOR MEMORY DEVICE AND TEST METHOD FOR THE SAME | August 2022 | May 2024 | Allow | 20 | 0 | 0 | No | No |
| 17899898 | VARIABLE RESISTANCE NON-VOLATILE MEMORY WITH A GATE INSULATOR FILM AT A SAME HEIGHT AS A VOLTAGE APPLICATION ELECTRODE | August 2022 | September 2024 | Allow | 25 | 0 | 1 | No | No |
| 17899951 | SEMICONDUCTOR STORAGE DEVICE ACQUIRING VOLTAGE FROM DUMMY PILLARS | August 2022 | September 2024 | Allow | 25 | 0 | 1 | No | No |
| 17895433 | Memory System Having Combined High Density, Low Bandwidth and Low Density, High Bandwidth Memories | August 2022 | June 2023 | Allow | 10 | 0 | 0 | No | No |
| 17888781 | TRANSIENT AND STABLE STATE READ OPERATIONS OF A MEMORY DEVICE | August 2022 | October 2024 | Allow | 26 | 1 | 0 | No | No |
| 17885431 | Compensation For Reference Transistors And Memory Cells In Analog Neuro Memory In Deep Learning Artificial Neural Network | August 2022 | June 2023 | Allow | 10 | 1 | 0 | No | No |
| 17885437 | COMPENSATION FOR REFERENCE TRANSISTORS AND MEMORY CELLS IN ANALOG NEURO MEMORY IN DEEP LEARNING ARTIFICIAL NEURAL NETWORK | August 2022 | August 2023 | Allow | 12 | 1 | 0 | No | No |
| 17881009 | MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING | August 2022 | September 2024 | Allow | 25 | 1 | 0 | Yes | No |
| 17877714 | MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY REGIONS | July 2022 | April 2025 | Allow | 32 | 2 | 1 | No | No |
| 17875449 | METHOD AND CIRCUIT FOR ADAPTIVE COLUMN-SELECT LINE SIGNAL GENERATION | July 2022 | February 2024 | Allow | 19 | 0 | 0 | No | No |
| 17874611 | Buried Metal Techniques | July 2022 | June 2025 | Allow | 35 | 4 | 1 | Yes | No |
| 17813802 | Generating Self-Aligned Heater for PCRAM Using Filaments | July 2022 | October 2023 | Allow | 15 | 1 | 0 | No | No |
| 17864970 | MULTI-LAYERED MAGNETIC RANDOM ACCESS MEMORY AND ELECTRONIC DEVICE | July 2022 | September 2024 | Allow | 26 | 2 | 0 | No | No |
| 17865381 | LOW_POWERED MEMORY DEVICE AND METHOD OF CONTROLLING POWER OF THE SAME | July 2022 | April 2025 | Abandon | 33 | 2 | 0 | No | No |
| 17810688 | Multi-Bit Storage Device Using Phase Change Material | July 2022 | January 2024 | Allow | 19 | 0 | 1 | No | No |
| 17834074 | PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS | June 2022 | January 2024 | Allow | 19 | 0 | 0 | No | No |
| 17826733 | MEMORY DEVICE WITH DYNAMIC PROGRAM-VERIFY VOLTAGE CALIBRATION | May 2022 | October 2023 | Allow | 17 | 2 | 0 | Yes | No |
| 17750484 | RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND METHODS FOR FORMING THE SAME | May 2022 | October 2023 | Allow | 17 | 1 | 0 | No | No |
| 17751417 | ELECTRONIC DEVICE WITH VARIABLE RESISTANCE LAYERS AND INSULATING LAYERS ALTERNATELY STACKED AND METHOD OF MANUFACTURING THE SAME | May 2022 | September 2023 | Abandon | 16 | 1 | 0 | No | No |
| 17664550 | THREE DIMENSIONAL MEMORY DEVICE CONTAINING RESONANT TUNNELING BARRIER AND HIGH MOBILITY CHANNEL AND METHOD OF MAKING THEREOF | May 2022 | November 2024 | Allow | 30 | 1 | 0 | No | No |
| 17749364 | SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM | May 2022 | November 2024 | Allow | 30 | 1 | 0 | No | No |
| 17747183 | FLASH MEMORY DEVICES INCLUDING DRAM | May 2022 | July 2024 | Allow | 26 | 2 | 1 | Yes | No |
| 17747998 | NON-VOLATILE STATIC RANDOM ACCESS MEMORY INCORPORATING RESISTIVE RANDOM-ACCESS MEMORY | May 2022 | March 2024 | Allow | 22 | 1 | 0 | No | No |
| 17747335 | SEMICONDUCTOR DEVICE DELAYING MODE CONTROL SIGNALS | May 2022 | January 2024 | Allow | 20 | 0 | 0 | No | No |
| 17737032 | MEMORY DEVICES WITH SELECTOR LAYER AND METHODS OF FORMING THE SAME | May 2022 | June 2023 | Allow | 14 | 1 | 0 | Yes | No |
| 17737207 | CHARGE PUMP SYSTEM WITH LOW RIPPLE OUTPUT VOLTAGE | May 2022 | June 2023 | Allow | 13 | 1 | 0 | No | No |
| 17733474 | WRITE LATENCY AND ENERGY USING ASYMMETRIC CELL DESIGN | April 2022 | June 2024 | Allow | 26 | 1 | 1 | No | No |
| 17660640 | STACKED FET SRAM | April 2022 | December 2023 | Allow | 20 | 0 | 0 | No | No |
| 17657777 | METHOD OF FORMING PHASE-CHANGE MEMORY LAYERS ON RECESSED ELECTRODES | April 2022 | February 2023 | Allow | 11 | 0 | 0 | No | No |
| 17694184 | PROCESSING IN MEMORY IMPLEMENTING VLIW CONTROLLER | March 2022 | September 2023 | Allow | 18 | 1 | 0 | Yes | No |
| 17690332 | LOW POWER MODE WITH READ SEQUENCE ADJUSTMENT | March 2022 | April 2024 | Allow | 26 | 1 | 0 | Yes | No |
| 17682297 | MEMORY DEVICE WITH INCREASED ELECTRODE RESISTANCE TO REDUCE TRANSIENT SELECTION CURRENT | February 2022 | April 2023 | Allow | 14 | 1 | 0 | No | No |
| 17682968 | SEMICONDUCTOR STORAGE DEVICE AND DATA ERASING METHOD | February 2022 | November 2023 | Allow | 20 | 0 | 0 | No | No |
| 17673137 | THREE DIMENSIONAL MEMORY DEVICE CONTAINING RESONANT TUNNELING BARRIER AND HIGH MOBILITY CHANNEL AND METHOD OF MAKING THEREOF | February 2022 | January 2025 | Allow | 35 | 1 | 1 | No | No |
| 17671288 | DUAL PORT MEMORY CELL WITH MULTIPLE METAL LAYERS | February 2022 | July 2024 | Allow | 29 | 1 | 1 | No | No |
| 17579364 | MULTI-GATE NOR FLASH THIN-FILM TRANSISTOR STRINGS ARRANGED IN STACKED HORIZONTAL ACTIVE STRIPS WITH VERTICAL CONTROL GATES | January 2022 | June 2023 | Allow | 17 | 2 | 0 | No | No |
| 17627160 | CMOS-COMPATIBLE PROTONIC RESISTIVE DEVICES | January 2022 | June 2022 | Allow | 5 | 0 | 0 | No | No |
| 17575399 | SYSTEMS AND METHODS TO MANAGE MEMORY DURING POWER DOWN AND STORAGE | January 2022 | October 2024 | Allow | 33 | 2 | 0 | No | No |
| 17561278 | ADJUSTING PROGRAM EFFECTIVE TIME USING PROGRAM STEP CHARACTERISTICS | December 2021 | September 2023 | Allow | 21 | 3 | 0 | Yes | No |
| 17552225 | SEMICONDUCTOR MEMORY DEVICE | December 2021 | November 2023 | Allow | 23 | 0 | 0 | No | No |
| 17549162 | MEMORY COMPRISING A MATRIX OF RESISTIVE MEMORY CELLS, AND ASSOCIATED METHOD OF INTERFACING | December 2021 | April 2024 | Allow | 28 | 1 | 0 | No | No |
| 17541240 | STATIC RANDOM ACCESS MEMORY WITH A SUPPLEMENTARY DRIVER CIRCUIT AND METHOD OF CONTROLLING THE SAME | December 2021 | January 2023 | Allow | 14 | 1 | 0 | No | No |
| 17537937 | MAGNETIC MEMORY DEVICE WITH A PLURALITY OF CAPPING LAYERS | November 2021 | June 2024 | Allow | 30 | 2 | 0 | Yes | No |
| 17536386 | METHOD OF RRAM WRITE RAMPING VOLTAGE IN INTERVALS | November 2021 | January 2023 | Allow | 14 | 1 | 0 | Yes | No |
| 17526121 | MULTI-STATE PROGRAMMING OF MEMORY CELLS | November 2021 | January 2024 | Allow | 26 | 1 | 0 | No | No |
| 17526646 | MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING | November 2021 | January 2024 | Allow | 26 | 0 | 1 | No | No |
| 17450691 | TUNING PERPENDICULAR MAGNETIC ANISOTROPY OF HEUSLER COMPOUND IN MRAM DEVICES | October 2021 | March 2025 | Allow | 41 | 1 | 0 | Yes | No |
| 17441667 | TRAINING FOR CHIP SELECT SIGNAL READ OPERATIONS BY MEMORY DEVICES | September 2021 | February 2024 | Allow | 28 | 1 | 0 | No | No |
| 17470003 | WRAP-AROUND PROJECTION LINER FOR AI DEVICE | September 2021 | April 2024 | Allow | 31 | 2 | 0 | No | No |
| 17462302 | SEMICONDUCTOR STORAGE DEVICE | August 2021 | February 2024 | Abandon | 29 | 1 | 0 | No | No |
| 17460504 | CONDUCTIVE-BRIDGING SEMICONDUCTOR MEMORY DEVICE FORMED BY SELECTIVE DEPOSITION | August 2021 | November 2023 | Allow | 26 | 1 | 0 | No | No |
| 17310859 | ANTI-FUSE UNIT STRUCTURE AND ANTI-FUSE ARRAY | August 2021 | January 2025 | Allow | 41 | 2 | 0 | No | No |
| 17412157 | PHASE CHANGE MEMORY WITH HEATER | August 2021 | December 2023 | Allow | 27 | 1 | 1 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner LEBOEUF, JEROME LARRY.
With a 33.3% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 8.3% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is in the bottom 25% across the USPTO, indicating that filing appeals is less effective here than in most other areas.
✓ Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.
⚠ Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.
Examiner LEBOEUF, JEROME LARRY works in Art Unit 2824 and has examined 524 patent applications in our dataset. With an allowance rate of 86.1%, this examiner has an above-average tendency to allow applications. Applications typically reach final disposition in approximately 22 months.
Examiner LEBOEUF, JEROME LARRY's allowance rate of 86.1% places them in the 58% percentile among all USPTO examiners. This examiner has an above-average tendency to allow applications.
On average, applications examined by LEBOEUF, JEROME LARRY receive 1.69 office actions before reaching final disposition. This places the examiner in the 48% percentile for office actions issued. This examiner issues fewer office actions than average, which may indicate efficient prosecution or a more lenient examination style.
The median time to disposition (half-life) for applications examined by LEBOEUF, JEROME LARRY is 22 months. This places the examiner in the 81% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.
Conducting an examiner interview provides a +6.8% benefit to allowance rate for applications examined by LEBOEUF, JEROME LARRY. This interview benefit is in the 35% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.
When applicants file an RCE with this examiner, 31.2% of applications are subsequently allowed. This success rate is in the 55% percentile among all examiners. Strategic Insight: RCEs show above-average effectiveness with this examiner. Consider whether your amendments or new arguments are strong enough to warrant an RCE versus filing a continuation.
This examiner enters after-final amendments leading to allowance in 39.8% of cases where such amendments are filed. This entry rate is in the 53% percentile among all examiners. Strategic Recommendation: This examiner shows above-average receptiveness to after-final amendments. If your amendments clearly overcome the rejections and do not raise new issues, consider filing after-final amendments before resorting to an RCE.
When applicants request a pre-appeal conference (PAC) with this examiner, 44.4% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 38% percentile among all examiners. Note: Pre-appeal conferences show below-average success with this examiner. Consider whether your arguments are strong enough to warrant a PAC request.
This examiner withdraws rejections or reopens prosecution in 70.0% of appeals filed. This is in the 51% percentile among all examiners. Of these withdrawals, 42.9% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.
When applicants file petitions regarding this examiner's actions, 37.0% are granted (fully or in part). This grant rate is in the 33% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.
Examiner's Amendments: This examiner makes examiner's amendments in 0.6% of allowed cases (in the 61% percentile). This examiner makes examiner's amendments more often than average to place applications in condition for allowance (MPEP § 1302.04).
Quayle Actions: This examiner issues Ex Parte Quayle actions in 1.8% of allowed cases (in the 63% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.