USPTO Examiner MUNOZ ANDRES F - Art Unit 2818

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
19057751SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICEsFebruary 2025March 2026Allow1311NoNo
19025256PACKAGE STRUCTURESJanuary 2025October 2025Allow910NoNo
18779080SEMICONDUCTOR PACKAGE STRUCTURE HAVING THERMAL MANAGEMENT STRUCTUREJuly 2024November 2025Allow1612NoNo
18779081SEMICONDUCTOR PACKAGE STRUCTURE HAVING THERMAL MANAGEMENT STRUCTUREJuly 2024November 2025Allow1622NoNo
18476754METHOD FOR FORMING SEMICONDUCTOR STRUCTURESSeptember 2023February 2026Allow2800NoNo
18363536APPARATUS INCLUDING AN ISOLATION ASSEMBLYAugust 2023February 2026Allow3020NoNo
18346863FLIP-CHIP LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICEJuly 2023September 2025Allow2600NoNo
18038129METHOD FOR FORMING SEMICONDUCTOR STRUCTUREMay 2023February 2026Allow3300NoNo
18316044BORON DIFFUSION METHOD SUITABLE FOR HETEROJUNCTION BACK CONTACT SOLAR CELLSMay 2023August 2025Allow2700NoNo
18311563SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAMEMay 2023March 2026Allow3411NoNo
18310002METHOD OF PRODUCING SEMICONDUCTOR DEVICEMay 2023January 2026Allow3301NoNo
18251063LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUSApril 2023February 2026Allow3301NoNo
18136049OPTICAL DEVICE AND METHODApril 2023November 2025Allow3101NoNo
18185586SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE STRUCTURE AND METHOD OF MANUFACTURING DATA STORAGE STRUCTUREMarch 2023December 2025Allow3311YesNo
18185089METHOD FOR MANUFACTURING TRANSPARENT SOLAR CELLMarch 2023December 2025Abandon3310NoNo
18026448DISPLAY DEVICEMarch 2023June 2025Allow2700NoNo
18182388MICRO LIGHT-EMITTING DIODE DEVICEMarch 2023August 2025Allow2901NoNo
18119340OPTOCOUPLERMarch 2023October 2025Allow3110NoNo
18110478WAFER LEVEL PACKAGE AND METHOD OF MANUFACTURING THE SAMEFebruary 2023January 2026Abandon3501NoNo
18157033CHIP PACKAGE AND MANUFACTURING METHOD THEREOFJanuary 2023February 2026Allow3721NoNo
18156418METHOD OF MANUFACTURING DISPLAY DEVICEJanuary 2023June 2025Allow2800NoNo
18098930PROCESS METHOD FOR FABRICATING A THREE-DIMENSIONAL SOURCE CONTACT STRUCTUREJanuary 2023July 2025Allow3001NoNo
18155926STRUCTURES WITH CONVEX CAVITY BOTTOMSJanuary 2023January 2026Allow3611YesNo
18016685DISPLAY SUBSTRATE AND DISPLAY DEVICEJanuary 2023August 2025Allow3100NoNo
18155337ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOFJanuary 2023February 2026Allow3730NoNo
18097693VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH NEUTRALIZED FIN TIPSJanuary 2023September 2025Allow3201NoNo
18098079HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND FABRICATION METHOD THEREOFJanuary 2023November 2025Allow3411NoNo
18097493SEMICONDUCTOR DEVICE INCLUDING BARRIER DIELECTRIC LAYER INCLUDING FERROELECTRIC MATERIALJanuary 2023February 2026Allow3711NoNo
18152172SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAMEJanuary 2023July 2025Allow3001NoNo
18089463THREE-DIMENSIONAL MEMORY AND ITS FABRICATION METHODDecember 2022October 2025Allow3411YesNo
18059465SEMICONDUCTOR DEVICE WITH ATTACHED BATTERY AND METHOD THEREFORNovember 2022July 2025Allow3201NoNo
17989528SEMICONDUCTOR STRUCTURENovember 2022January 2024Allow1410YesNo
17977503Method for Manufacturing a Semiconductor Structure Having Group III-V Device on Group IV Substrate and Contacts with Liner StacksOctober 2022February 2024Allow1520NoNo
18046289HETEROEPITAXIAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A HETEROEPITAXIAL SEMICONDUCTOR DEVICEOctober 2022November 2025Allow3721YesNo
17892038METHODS FOR FUSION BONDING SEMICONDUCTOR DEVICES TO TEMPORARY CARRIER WAFERS WITH CAVITY REGIONS FOR REDUCED BOND STRENGTH, AND SEMICONDUCTOR DEVICE ASSEMBLIES FORMED BY THE SAMEAugust 2022November 2025Allow3912NoNo
17876313LINER-FREE CONDUCTIVE STRUCTURESJuly 2022October 2025Allow3921YesNo
17807872DISPLAY DEVICEJune 2022December 2023Allow1810NoNo
17749038INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALINGMay 2022May 2024Allow2411NoNo
17740241SEMICONDUCTOR DEVICE HAVING PLANAR TRANSISTOR AND FINFETMay 2022February 2024Allow2110NoNo
17660650SEMICONDUCTOR DEVICE WITH EMBEDDED BATTERY AND METHOD THEREFORApril 2022May 2025Allow3720YesNo
17712963SYSTEMS AND METHODS RELATED TO WIRE BOND CLEANING AND WIRE BONDING RECOVERYApril 2022May 2024Allow2510NoNo
17557221NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENTDecember 2021October 2025Allow4611YesNo
17615099HEAT DISSIPATING SUBSTRATE FOR SEMICONDUCTOR AND PREPARATION METHOD THEREOFNovember 2021November 2023Allow2411NoNo
17516533ENGINEERED NANOSTRUCTURED PASSIVATED CONTACTS AND METHOD OF MAKING THE SAMENovember 2021March 2024Allow2811YesNo
17464046Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) DeviceSeptember 2021November 2025Allow5090NoNo
17400928FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXYAugust 2021September 2024Abandon3711NoNo
17417762MICRO-LED DEVICE AND MANUFACTURING METHOD THEREOFJune 2021June 2024Abandon3610NoNo
17293672MICRO LED DEVICE AND METHOD FOR MANUFACTURING SAMEMay 2021May 2024Abandon3610NoNo
17318190SEMICONDUCTOR DEVICE IN A LEVEL SHIFTER WITH ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT AND SEMICONDUCTOR CHIPMay 2021April 2024Allow3511NoNo
17189093Source/Drain Feature to Contact InterfacesMarch 2021March 2024Allow3711NoNo
17268943SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS LEAK INSPECTION METHODFebruary 2021December 2023Allow3411YesNo
17256585SEMICONDUCTOR DEVICE HAVING RECESSES FORMING AREASDecember 2020December 2023Allow3510NoNo
16949894DIRECT-COOLING FOR SEMICONDUCTOR DEVICE MODULESNovember 2020June 2024Abandon4341YesNo
15991246METHOD FOR CONTINUOUSLY PREPARING ORGANIC LIGHT EMITTING DIODE BY USING THERMAL TRANSFER FILMMay 2018May 2019Allow1210NoNo
15960965Methods, Apparatus, and System for Reducing Leakage Current in Semiconductor DevicesApril 2018September 2019Allow1721NoNo
15757672METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYER AND SUPPORT SUBSTRATE SPACED APART BY RECESSMarch 2018July 2019Allow1710YesNo
15893748MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE COMPRISING OXIDE SEMICONDUCTOR FILMFebruary 2018May 2019Allow1510NoNo
15749444ARRAY SUBSTRATE AND REPAIRING METHOD THEREOFJanuary 2018June 2019Allow1610NoNo
15795884VERTICAL P-TYPE, N-TYPE, P-TYPE (PNP) JUNCTION INTEGRATED CIRCUIT (IC) STRUCTUREOctober 2017September 2018Allow1110NoNo
15721762PROCESS FOR MAKING AN INTEGRATED CIRCUIT THAT INCLUDES NCEM-ENABLED, TIP-TO-SIDE GAP-CONFIGURED FILL CELLS, WITH NCEM PADS FORMED FROM AT LEAST THREE CONDUCTIVE STRIPES POSITIONED BETWEEN ADJACENT GATESSeptember 2017January 2018Allow400NoNo
15721890Process for Making an Integrated Circuit that Includes NCEM-Enabled, Interlayer Overlap-Configured Fill Cells, with NCEM Pads Formed from at Least Three Conductive Stripes Positioned Between Adjacent GatesSeptember 2017December 2017Allow200NoNo
15721792Integrated Circuit Including NCEM-Enabled, Snake-Configured Fill Cells, with NCEM Pads Formed from at Least Three Conductive Stripes Positioned Between Adjacent GatesSeptember 2017January 2018Allow400NoNo
15721789Integrated Circuit Including NCEM-Enabled, Via-Open/Resistance-Configured Fill Cells, with NCEM Pads Formed from at Least Three Conductive Stripes Positioned Between Adjacent GatesSeptember 2017January 2018Allow300NoNo
15719595INTEGRATED CIRCUIT INCLUDING NCEM-ENABLED, CORNER GAP-CONFIGURED FILL CELLS, WITH NCEM PADS FORMED FROM AT LEAST THREE CONDUCTIVE STRIPES POSITIONED BETWEEN ADJACENT GATESSeptember 2017January 2018Allow400NoNo
15684449SEMICONDUCTOR DEVICEAugust 2017January 2018Allow500NoNo
15635725SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND APPARATUS USED IN FABRICATION THEREOFJune 2017March 2019Allow2011NoNo
15587631AN ELECTRONIC COMPONENT INCLUDING AN OPTICAL MEMBER FIXED WITH ADHESIVEMay 2017February 2019Allow2111NoNo
15492164LIGHT EMITTING DIODEApril 2017August 2018Allow1620YesNo
15473646Integrated Circuit Containing First and Second DOEs of Standard Cell Compatible, NCEM-Enabled Fill Cells, with the First DOE Including Tip-to-Tip Short Configured Fill Cells, and the Second DOE Including Corner Short Configured Fill CellsMarch 2017June 2017Allow200NoNo
15433329INTEGRATED CIRCUIT CONTAINING STANDARD LOGIC CELLS AND LIBRARY-COMPATIBLE, NCEM-ENABLED FILL CELLS, INCLUDING AT LEAST VIA-OPEN-CONFIGURED, GATE-SHORT-CONFIGURED, GATECNT-SHORT-CONFIGURED, AND METAL-SHORT-CONFIGURED, NCEM-ENABLED FILL CELLSFebruary 2017April 2017Allow200NoNo
15221811RECESSED CONTACT TO SEMICONDUCTOR NANOWIRESJuly 2016July 2017Allow1120NoNo
15220967Insulator Material for Use in RRAMJuly 2016November 2018Allow2811NoNo
15197797CHIP SCALE LED PACKAGING METHODJune 2016February 2017Allow710NoNo
15197701METHOD FOR MANUFACTURING VERTICAL SUPER JUNCTION DRIFT LAYER OF POWER SEMICONDUCTOR DEVICESJune 2016April 2018Allow2211NoNo
15149494SEMICONDUCTOR MEMORY DEVICE HAVING STACKED WORD LINES AND CONDUCTIVE PILLARMay 2016December 2016Allow820YesNo
15027286PRECISION BATCH PRODUCTION METHOD FOR MANUFACTURING FERRITE RODSApril 2016July 2017Allow1501NoNo
149661843D SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE RESISTANCE MEMORY ELEMENTSDecember 2015October 2016Allow1020NoNo
14849852MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE COMPRISING OXIDE SEMICONDUCTOR FILMSeptember 2015October 2017Allow2520NoNo
14845951SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND APPARATUS USED IN FABRICATION THEREOFSeptember 2015March 2017Allow1901YesNo
14748335METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICEJune 2015February 2016Allow801NoNo
14656758METHOD FOR INTEGRATING THIN-FILM TRANSISTORS ON AN ISOLATION REGION IN AN INTEGRATED CIRCUIT AND RESULTING DEVICEMarch 2015May 2016Allow1401NoNo
14460047METHOD OF FORMING A BOND RING FOR A FIRST AND SECOND SUBSTRATEAugust 2014February 2015Allow610YesNo
14444586BIOMEMS AND PLANAR LIGHT CIRCUIT WITH INTEGRATED PACKAGEJuly 2014January 2015Allow610YesNo
14348653METHOD FOR FORMING A GRAPHENE LAYER ON THE SURFACE OF A SUBSTRATE INCLUDING A SILICON LAYERMarch 2014February 2015Allow1110NoNo
14348585METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE WITH WIRELESS CONTACTINGMarch 2014November 2014Allow800YesNo
14174869DISLOCATION ENGINEERING USING A SCANNED LASERFebruary 2014June 2014Allow410NoNo
14174868DISLOCATION ENGINEERING USING A SCANNED LASERFebruary 2014June 2014Allow410YesNo
14161309STRUCTURE AND METHOD TO DETERMINE THROUGH SILICON VIA BUILD INTEGRITYJanuary 2014July 2016Allow3021NoNo
14160630FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED DOUBLE GATES ON BULK SILICON SUBSTRATE, METHODS OF FORMING, AND RELATED DESIGN STRUCTURESJanuary 2014March 2016Allow2611NoNo
14160628SEMICONDUCTOR STRUCTURE AND METHOD FORMING THE SAMEJanuary 2014June 2015Allow1701NoNo
14156745METHOD TO FORM WRAP-AROUND CONTACT FOR FINFETJanuary 2014July 2015Allow1700NoNo
14156515PROCESS DESIGN TO IMPROVE TRANSISTOR VARIATIONS AND PERFORMANCEJanuary 2014August 2015Allow1911NoNo
14091355DEPOSITION OF SEMICONDUCTOR NANOCRYSTALS FOR LIGHT EMITTING DEVICESNovember 2013June 2016Allow3011NoNo
14091247MANUFACTURING METHOD OF SEMICONDUCTOR DEVICENovember 2013June 2015Allow1910NoNo
14041922NANOGAP DEVICE WITH CAPPED NANOWIRE STRUCTURESSeptember 2013August 2015Allow2221YesNo
14026204SEMICONDUCTOR MEMORY DEVICE HAVING A VARIABLE RESISTANCE LAYER SERVING AS A MEMORY LAYERSeptember 2013September 2015Allow2411NoNo
14023865METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICESeptember 2013March 2015Allow1811YesNo
14017050SUPERLATTICE PHASE CHANGE MEMORY DEVICESeptember 2013May 2015Allow2001NoNo
13889635MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING N-CHANNEL MOS TRANSISTOR, P-CHANNEL MOS TRANSISTOR AND EXPANDING OR CONTRACTING FILMMay 2013December 2013Allow711YesNo
13825197METHOD FOR PREPARING P-TYPE ZnO-BASED MATERIALMarch 2013December 2013Allow900NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner MUNOZ, ANDRES F.

Strategic Value of Filing an Appeal

Total Appeal Filings
4
Allowed After Appeal Filing
2
(50.0%)
Not Allowed After Appeal Filing
2
(50.0%)
Filing Benefit Percentile
80.3%
Higher than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 50.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is in the top 25% across the USPTO, indicating that filing appeals is particularly effective here. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Strategic Recommendations

Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Examiner MUNOZ, ANDRES F - Prosecution Strategy Guide

Executive Summary

Examiner MUNOZ, ANDRES F works in Art Unit 2818 and has examined 138 patent applications in our dataset. With an allowance rate of 97.1%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 22 months.

Allowance Patterns

Examiner MUNOZ, ANDRES F's allowance rate of 97.1% places them in the 88% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by MUNOZ, ANDRES F receive 1.37 office actions before reaching final disposition. This places the examiner in the 21% percentile for office actions issued. This examiner issues significantly fewer office actions than most examiners.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by MUNOZ, ANDRES F is 22 months. This places the examiner in the 89% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a +1.9% benefit to allowance rate for applications examined by MUNOZ, ANDRES F. This interview benefit is in the 21% percentile among all examiners. Note: Interviews show limited statistical benefit with this examiner compared to others, though they may still be valuable for clarifying issues.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 35.7% of applications are subsequently allowed. This success rate is in the 80% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 34.2% of cases where such amendments are filed. This entry rate is in the 51% percentile among all examiners. Strategic Recommendation: This examiner shows above-average receptiveness to after-final amendments. If your amendments clearly overcome the rejections and do not raise new issues, consider filing after-final amendments before resorting to an RCE.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 200.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 95% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences are highly effective with this examiner compared to others. Before filing a full appeal brief, strongly consider requesting a PAC. The PAC provides an opportunity for the examiner and supervisory personnel to reconsider the rejection before the case proceeds to the PTAB.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 100.0% of appeals filed. This is in the 93% percentile among all examiners. Of these withdrawals, 100.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner frequently reconsiders rejections during the appeal process compared to other examiners. Per MPEP § 1207.01, all appeals must go through a mandatory appeal conference. Filing a Notice of Appeal may prompt favorable reconsideration even before you file an Appeal Brief.

Petition Practice

When applicants file petitions regarding this examiner's actions, 18.2% are granted (fully or in part). This grant rate is in the 9% percentile among all examiners. Strategic Note: Petitions are rarely granted regarding this examiner's actions compared to other examiners. Ensure you have a strong procedural basis before filing a petition, as the Technology Center Director typically upholds this examiner's decisions.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 13.0% of allowed cases (in the 96% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 13.4% of allowed cases (in the 91% percentile). Per MPEP § 714.14, a Quayle action indicates that all claims are allowable but formal matters remain. This examiner frequently uses Quayle actions compared to other examiners, which is a positive indicator that once substantive issues are resolved, allowance follows quickly.

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • RCEs are effective: This examiner has a high allowance rate after RCE compared to others. If you receive a final rejection and have substantive amendments or arguments, an RCE is likely to be successful.
  • Request pre-appeal conferences: PACs are highly effective with this examiner. Before filing a full appeal brief, request a PAC to potentially resolve issues without full PTAB review.
  • Appeal filing as negotiation tool: This examiner frequently reconsiders rejections during the appeal process. Filing a Notice of Appeal may prompt favorable reconsideration during the mandatory appeal conference.
  • Examiner cooperation: This examiner frequently makes examiner's amendments to place applications in condition for allowance. If you are close to allowance, the examiner may help finalize the claims.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.