USPTO Examiner PIZARRO CRESPO MARCOS D - Art Unit 2814

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
17087600SINGLE-CHIP CONTAINING POROUS-WAFER BATTERY AND DEVICE AND METHOD OF MAKING THE SAMENovember 2020December 2024Abandon4901NoNo
17086754Metal Contact Structure and Method of Forming the Same in a Semiconductor DeviceNovember 2020September 2023Allow3420NoNo
17064471DRY ETCH BACK SUBSTRATE INTERCONNECTIONSOctober 2020February 2024Abandon4001NoNo
16948745CONTACT FORMATION METHOD AND RELATED STRUCTURESeptember 2020February 2023Allow2811NoNo
17018031Fin field effect transistor having conformal and non-conformal gate dielectric layersSeptember 2020August 2024Allow4711YesNo
17009693WIRING FORMATION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICESeptember 2020September 2023Allow3621NoYes
17007684Back Side Illuminated Image Sensor with Deep Trench Isolation Structures and Self-Aligned Color FiltersAugust 2020July 2022Allow2241NoNo
17007241Trench vertical power MOSFET with channel including regions with different concentrationsAugust 2020December 2022Allow2701NoNo
17001212TRENCH-GATE TRANSISTOR WITH GATE DIELECTRIC HAVING A FIRST THICKNESS BETWEEN THE GATE ELECTRODE AND THE CHANNEL REGION AND A SECOND GREATER THICKNESS BETWEEN THE GATE ELECTRODE AND THE SOURCE/DRAIN REGIONS.August 2020March 2022Allow1911NoNo
16996010FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE STRUCTURE AND METHODAugust 2020February 2022Allow1801NoNo
16985242METHOD FOR FABRICATING A METAL GATE TRANSISTOR WITH A STACKED DOUBLE SIDEWALL SPACER STRUCTUREAugust 2020April 2023Allow3240NoNo
16942781FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsJuly 2020August 2022Allow2521NoNo
16942474MULTI-CHIP MODULES INCLUDING STACKED SEMICONDUCTOR DICEJuly 2020April 2021Allow911NoNo
16933890Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body DiodeJuly 2020March 2023Allow3200NoNo
16960349LOCKABLE SEMICONDUCTOR DIE, AN ELECTRONIC DEVICE INCLUDING LOCKABLE SEMICONDUCTOR DIES AND METHOD OF PRODUCTIONJuly 2020October 2023Abandon3901NoNo
16920168SEMICONDUCTOR PACKAGE INCLUDING STACKED SEMICONDUCTOR CHIPS AND METHOD FOR FABRICATING THE SAMEJuly 2020March 2023Allow3302NoNo
16913061Structure and Method for SRAM FinFET Device Having an Oxide FeatureJune 2020November 2021Allow1720NoNo
16899568MEMORY PACKAGE STRUCTUREJune 2020March 2022Allow2110NoNo
16878031Bottom-gate TFT including gate sidewall spacers formed to relax the local electric field concentrationMay 2020December 2022Allow3121NoNo
16876460ELECTRONIC PACKAGEMay 2020February 2024Abandon4550NoNo
16874722PACKAGE-ON-PACKAGE (POP) TYPE SEMICONDUCTOR PACKAGESMay 2020November 2022Allow3022YesNo
16870642PACKAGE COMPRISING DISCRETE ANTENNA DEVICEMay 2020December 2023Allow4342NoNo
16866390Magnetoresistive Random Access Memory Cell and Fabricating the SameMay 2020July 2022Allow2621NoNo
16759608Semiconductor package comprising a heat dissipation structure and an outer peripheral frame used as a resin flow barrierApril 2020September 2022Allow2921NoNo
16845567SEMICONDUCTOR PACKAGE DEVICEApril 2020February 2022Allow2211NoNo
16837299IMAGE SENSOR WITH ENHANCED MULTI-SUBSTRATE STRUCTURES AND INTERCONNECTSApril 2020May 2024Abandon4921YesNo
16798404SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOFFebruary 2020October 2022Allow3212NoNo
16792905CHIP PACKAGE STRUCTUREFebruary 2020February 2022Allow2410NoNo
16793406SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAMEFebruary 2020August 2022Abandon3001NoNo
16741209METHODS FOR VFET CELL PLACEMENT AND CELL ARCHITECTUREJanuary 2020June 2022Allow2912NoNo
16732413METHOD FOR FORMING A HOMOGENEOUS BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE FOR MEMORYJanuary 2020December 2021Allow2310YesNo
16721475SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING BASE FOR SEMICONDUCTOR PACKAGEDecember 2019June 2022Allow3020NoYes
16714431Method of forming graphene and metallic cap and barrier layers for interconnectsDecember 2019July 2022Allow3121NoNo
16714444SEMICONDUCTOR STRUCTUREDecember 2019October 2022Allow3420NoNo
16710544SEMICONDUCTOR DEVICEDecember 2019January 2022Abandon2501NoNo
16687713SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOFNovember 2019February 2022Allow2711NoNo
16614360MULTI PIXEL LED PACKAGESNovember 2019December 2021Allow2511NoNo
16683910Method of Manufacturing a Multi-Chip Semiconductor Power DeviceNovember 2019October 2022Abandon3541NoNo
16680816GATE STRUCTURE AND METHODNovember 2019February 2023Allow3931NoNo
16666500TERMINATION OF MULTIPLE STEPPED OXIDE SHIELDED GATE TRENCH MOSFETOctober 2019November 2022Abandon3701NoNo
16666771SILICON CARBIDE TRENCH POWER DEVICEOctober 2019October 2023Abandon4761NoNo
16666418Nonvolatile memory device having a memory-transistor gate-electrode provided with a charge-trapping gate-dielectric layer and two sidewall select-transistor gate-electrodesOctober 2019January 2022Allow2701NoNo
16666709INTEGRATED ASSEMBLIES, AND METHODS OF FORMING INTEGRATED ASSEMBLIESOctober 2019September 2022Allow3511NoNo
16609422ELECTROSTATIC PROTECTION CIRCUIT, ARRAY SUBSTRATE AND DISPLAY APPARATUSOctober 2019September 2022Allow3511NoNo
16666077BURIED SOURCE LINE STRUCTURE FOR BOOSTING READ SCHEMEOctober 2019March 2022Allow2801NoNo
16665836FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION OF GATE INDUCED DRAIN LEAKAGEOctober 2019June 2023Allow4341NoNo
16666116MEMs using outgassing material to adjust the pressure level in a cavityOctober 2019December 2022Allow3821NoNo
16588588Semiconductor Bonding Structures and MethodsSeptember 2019June 2024Allow5660NoNo
16584405BOTTOM PACKAGE EXPOSED DIE MEMS PRESSURE SENSOR INTEGRATED CIRCUIT PACKAGE DESIGNSeptember 2019February 2022Allow2811NoNo
16528938STACKED SEMICONDUCTOR PACKAGE HAVING MOLD VIAS AND METHOD FOR MANUFACTURING THE SAMEAugust 2019December 2021Allow2820YesNo
16519457FLEXIBLE LIGHTING DEVICE INCLUDING A NANO-PARTICLE HEAT SPREADING LAYERJuly 2019February 2022Abandon3121YesNo
16516333SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, ELEMENT ASSEMBLY, AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL ELEMENTJuly 2019August 2021Allow2520NoNo
16507629THROUGH SILICON VIA OPTIMIZATION FOR THREE-DIMENSIONAL INTEGRATED CIRCUITSJuly 2019July 2021Allow2521NoNo
16507226RADIO-FREQUENCY MODULEJuly 2019March 2022Allow3230NoNo
16442199Integrated Micro-Electromechanical Device of Semiconductor Material Having a DiaphragmJune 2019April 2023Allow4631NoNo
16439016Semiconductor Devices Having a Membrane Layer with Smooth Stress-Relieving Corrugations and Methods of Fabrication ThereofJune 2019October 2023Abandon5241NoNo
16423908ELECTRONIC COMPONENT MODULEMay 2019December 2021Allow3031YesNo
16422988CHIP STRUCTURE AND METHOD FOR FORMING THE SAMEMay 2019August 2023Allow5062YesNo
16422771SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICEMay 2019January 2022Allow3231NoNo
16422123Melt Anneal Source and Drain RegionsMay 2019September 2021Allow2731YesNo
16420387DRAM with a hydrogen-supply layer and a high-capacitance embedded capacitor with a cylindrical storage nodeMay 2019May 2021Allow2411NoNo
16420638NON-COMMON CAPPING LAYER ON AN ORGANIC DEVICEMay 2019April 2023Allow4751NoNo
16420469RECESSED CHANNEL STRUCTURE IN FDSOIMay 2019December 2021Allow3111NoNo
16420514CMOS-MEMS INTEGRATION WITH THROUGH-CHIP VIA PROCESSMay 2019September 2021Allow2801NoNo
16420530VERTICAL FIELD-EFFECT TRANSISTOR WITH T-SHAPED GATEMay 2019October 2021Allow2801NoNo
16420582Arrays Of Capacitors, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming An Array Of CapacitorsMay 2019September 2021Allow2801NoNo
16420429APPARATUSES INCLUDING LAMINATE SPACER STRUCTURES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODSMay 2019June 2021Allow2501NoNo
16397452VERTICALLY STACKED FIN SEMICONDUCTOR DEVICESApril 2019March 2021Allow2301NoNo
16397464IMAGE SENSOR STRUCTURE AND MANUFACTURING METHOD THEREOFApril 2019July 2021Allow2711NoNo
16397341VERTICAL THIN FILM TRANSISTOR WITH PERFORATED OR COMB-GATE ELECTRODE CONFIGURATIONApril 2019March 2021Allow2301NoNo
16397248Gate Structure and MethodApril 2019September 2021Allow2811NoNo
16397380Silicon carbide insulated-gate power field effect transistorApril 2019February 2021Allow2120NoNo
16367813SEMICONDUCTOR DEVICE WITH ADJACENT SOURCE/DRAIN REGIONS CONNECTED BY A SEMICONDUCTOR BRIDGE, AND METHOD FOR FABRICATING THE SAMEMarch 2019April 2020Allow1200NoNo
16359027FLASH MEMORY WITH IMPROVED GATE STRUCTURE AND A METHOD OF CREATING THE SAMEMarch 2019July 2021Allow2821YesNo
16264255FET TRANSISTOR ON A III-V MATERIAL STRUCTURE WITH SUBSTRATE TRANSFERJanuary 2019October 2020Allow2001NoNo
16087087Bonding apparatus including a heater and a cooling flow path used for stacking a plurality of semiconductor chipsDecember 2018July 2022Allow4621YesNo
16205795FLEXIBLE LIGHTING DEVICE INCLUDING A NANO-PARTICLE HEAT SPREADING LAYERNovember 2018February 2022Abandon3921NoNo
16161381Array Of Recessed Access Gate LinesOctober 2018May 2022Allow4341NoNo
16160308Structure and Method for Vertical Tunneling Field Effect Transistor with Leveled Source and DrainOctober 2018April 2021Allow3020NoNo
16157497Light-Emitting Device Using Organometallic Complex Having a Pyrazine SkeletonOctober 2018April 2020Allow1800NoNo
16046211Semiconductor Bonding Structures and MethodsJuly 2018April 2023Allow5791YesNo
16011771Field Effect Transistor Constructions With Gate Insulator Having Local Regions Radially There-Through That Have Different Capacitance At Different Circumferential Locations Relative To A Channel Core PeripheryJune 2018July 2021Allow3721NoNo
16010002HIGH VOLTAGE PMOS (HVPMOS) TRANSISTOR WITH A COMPOSITE DRIFT REGION AND MANUFACTURE METHOD THEREOFJune 2018June 2021Allow3621NoNo
15984575SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAMEMay 2018March 2020Abandon2221NoNo
15975284Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body DiodeMay 2018March 2020Allow2200NoNo
15956231STACKABLE ELECTRONIC PACKAGE AND METHOD OF FABRICATING SAMEApril 2018November 2021Abandon4331NoYes
15946697THIN-FILM TRANSISTOR ARRAY SUBSTRATE WITH CONNECTION NODE AND DISPLAY DEVICE INCLUDING THE SAMEApril 2018October 2021Allow4221NoYes
15936019SEMICONDUCTOR DEVICES INCLUDING THROUGH-SILICON-VIAS AND METHODS OF MANUFACTURING THE SAME AND SEMICONDUCTOR PACKAGES INCLUDING THE SEMICONDUCTOR DEVICESMarch 2018April 2021Allow3611NoNo
15905288SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAMEFebruary 2018April 2021Abandon3822NoNo
15904850BONDED WAFER PRODUCTION METHOD AND BONDED WAFERFebruary 2018March 2022Abandon4941NoNo
15904959MEMORY ARRAY CIRCUIT AND METHOD OF MANUFACTURING THE SAMEFebruary 2018November 2020Allow3311NoNo
15905302Three-dimensional NAND memory device with source line comprising metallic and semiconductor layersFebruary 2018March 2021Allow3611NoNo
15904902IMAGE SENSOR PACKAGING METHOD, IMAGE SENSOR PACKAGE AND LENS MODULEFebruary 2018May 2020Allow2711NoNo
15905046SEMICONDUCTOR PACKAGEFebruary 2018April 2020Allow2600NoNo
15755516PHOTODIODE MATRIX WITH ISOLATED CATHODESFebruary 2018June 2020Abandon2801NoNo
15815516MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYERNovember 2017March 2019Allow1611NoNo
15785595BACK SIDE ILLUMINATED IMAGE SENSOR WITH DEEP TRENCH ISOLATION STRUCTURES AND SELF-ALIGNED COLOR FILTERSOctober 2017May 2020Allow3011NoNo
15730320ELECTRONIC DEVICE INCLUDING A DIELECTRIC LAYER HAVING A NON-UNIFORM THICKNESSOctober 2017December 2019Allow2610NoNo
15560245MICROELECTRONIC CONDUCTIVE ROUTES AND METHODS OF MAKING THE SAMESeptember 2017August 2019Allow2321NoNo
15560479ELECTRONIC CHIP DEVICE WITH IMPROVED THERMAL RESISTANCE AND ASSOCIATED MANUFACTURING PROCESSSeptember 2017December 2019Abandon2711NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner PIZARRO CRESPO, MARCOS D.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
41
Examiner Affirmed
33
(80.5%)
Examiner Reversed
8
(19.5%)
Reversal Percentile
31.5%
Lower than average

What This Means

With a 19.5% reversal rate, the PTAB affirms the examiner's rejections in the vast majority of cases. This reversal rate is below the USPTO average, indicating that appeals face more challenges here than typical.

Strategic Value of Filing an Appeal

Total Appeal Filings
102
Allowed After Appeal Filing
30
(29.4%)
Not Allowed After Appeal Filing
72
(70.6%)
Filing Benefit Percentile
45.5%
Lower than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 29.4% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is below the USPTO average, suggesting that filing an appeal has limited effectiveness in prompting favorable reconsideration.

Strategic Recommendations

Appeals to PTAB face challenges. Ensure your case has strong merit before committing to full Board review.

Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.

Examiner PIZARRO CRESPO, MARCOS D - Prosecution Strategy Guide

Executive Summary

Examiner PIZARRO CRESPO, MARCOS D works in Art Unit 2814 and has examined 800 patent applications in our dataset. With an allowance rate of 70.2%, this examiner has a below-average tendency to allow applications. Applications typically reach final disposition in approximately 33 months.

Allowance Patterns

Examiner PIZARRO CRESPO, MARCOS D's allowance rate of 70.2% places them in the 34% percentile among all USPTO examiners. This examiner has a below-average tendency to allow applications.

Office Action Patterns

On average, applications examined by PIZARRO CRESPO, MARCOS D receive 2.28 office actions before reaching final disposition. This places the examiner in the 60% percentile for office actions issued. This examiner issues a slightly above-average number of office actions.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by PIZARRO CRESPO, MARCOS D is 33 months. This places the examiner in the 48% percentile for prosecution speed. Prosecution timelines are slightly slower than average with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a +17.1% benefit to allowance rate for applications examined by PIZARRO CRESPO, MARCOS D. This interview benefit is in the 57% percentile among all examiners. Recommendation: Interviews provide an above-average benefit with this examiner and are worth considering.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 20.3% of applications are subsequently allowed. This success rate is in the 25% percentile among all examiners. Strategic Insight: RCEs show lower effectiveness with this examiner compared to others. Consider whether a continuation application might be more strategic, especially if you need to add new matter or significantly broaden claims.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 29.1% of cases where such amendments are filed. This entry rate is in the 43% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 29.8% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 32% percentile among all examiners. Note: Pre-appeal conferences show below-average success with this examiner. Consider whether your arguments are strong enough to warrant a PAC request.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 60.6% of appeals filed. This is in the 38% percentile among all examiners. Of these withdrawals, 34.9% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows below-average willingness to reconsider rejections during appeals. Be prepared to fully prosecute appeals if filed.

Petition Practice

When applicants file petitions regarding this examiner's actions, 67.6% are granted (fully or in part). This grant rate is in the 74% percentile among all examiners. Strategic Note: Petitions show above-average success regarding this examiner's actions. Petitionable matters include restriction requirements (MPEP § 1002.02(c)(2)) and various procedural issues.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 10.8% of allowed cases (in the 94% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 7.5% of allowed cases (in the 87% percentile). Per MPEP § 714.14, a Quayle action indicates that all claims are allowable but formal matters remain. This examiner frequently uses Quayle actions compared to other examiners, which is a positive indicator that once substantive issues are resolved, allowance follows quickly.

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Examiner cooperation: This examiner frequently makes examiner's amendments to place applications in condition for allowance. If you are close to allowance, the examiner may help finalize the claims.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.