Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18727085 | Method of Fabricating a 3D NAND flash memory With Increased Data Retention Capability | February 2025 | November 2025 | Allow | 16 | 1 | 0 | No | No |
| 18678141 | Multi-Die Package Structures Including an Interconnected Package Component disposed in a Substrate Cavity | May 2024 | August 2025 | Allow | 14 | 1 | 0 | No | No |
| 18657259 | CROSS-POINT MEMORY ARRAY WITH ACCESS LINES | May 2024 | February 2026 | Allow | 22 | 1 | 1 | No | No |
| 18638220 | LIGHT-EMITTING ELEMENT WITH A CUSHION PART | April 2024 | July 2025 | Allow | 15 | 1 | 1 | No | No |
| 18598250 | MULTI-DIE PACKAGE STRUCTURES INCLUDING REDISTRIBUTION LAYERS | March 2024 | September 2025 | Allow | 18 | 2 | 1 | No | No |
| 18593752 | INTERCONNECTION STRUCTURE WITH ANTI-ADHESION LAYER | March 2024 | September 2025 | Allow | 18 | 1 | 0 | No | No |
| 18588407 | Memory Array Comprising Strings Of Memory Cells And Conductive Gate Lines Of Different Vertical Thicknesses | February 2024 | December 2024 | Allow | 10 | 0 | 0 | No | No |
| 18442116 | METHOD FOR FORMING MEMORY DEVICE WITH BURIED GATE IN PERIPHERAL CIRCUIT REGION | February 2024 | April 2025 | Allow | 14 | 2 | 0 | No | No |
| 18422550 | THERMAL INTERFACE MATERIAL HAVING DIFFERENT THICKNESSES IN PACKAGES | January 2024 | December 2025 | Allow | 23 | 1 | 1 | No | No |
| 18452910 | DISPLAY DEVICE AND ELECTRONIC APPARATUS WITH HIGH DENSITY PIXELS | August 2023 | May 2025 | Allow | 21 | 1 | 1 | No | No |
| 18452668 | SEMICONDUCTOR DEVICE WITH PROTECTIVE PROTRUSION | August 2023 | February 2026 | Allow | 30 | 4 | 0 | No | No |
| 18450865 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH A STEPPED MEMORY FILM | August 2023 | July 2025 | Allow | 23 | 1 | 1 | No | No |
| 18446776 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH HIGH ASPECT RATIO | August 2023 | February 2026 | Allow | 31 | 1 | 1 | Yes | No |
| 18446160 | METHOD FOR FORMING FINFET WITH SOURCE/DRAIN REGIONS COMPRISING AN INSULATOR LAYER | August 2023 | July 2025 | Allow | 23 | 1 | 1 | No | No |
| 18364662 | IMAGE SENSOR WITH A HIGH ABSORPTION LAYER | August 2023 | December 2025 | Allow | 29 | 1 | 1 | No | No |
| 18196505 | VERTICAL MEMORY DEVICES INCLUDING INSULATING INTERLAYER COVERING CIRCUIT PATTERN AND INTERMEDIATE INSULATION LAYER ON THE INSULATING INTERLAYER | May 2023 | April 2025 | Allow | 23 | 1 | 1 | No | No |
| 18308594 | 3D SEMICONDUCTOR DEVICE AND ARRAY LAYOUT WITH ISOLATED CONDUCTIVE PILLARS | April 2023 | March 2025 | Allow | 22 | 1 | 1 | No | No |
| 18307698 | MICROELECTRONIC DEVICES WITH INCREASED GRAIN SIZE | April 2023 | January 2026 | Allow | 33 | 1 | 1 | No | No |
| 18139347 | DOUBLE PATTERNING METHOD OF MANUFACTURING SELECT GATES AND WORD LINES | April 2023 | February 2026 | Allow | 34 | 1 | 0 | No | No |
| 18138189 | SEMICONDUCTOR DEVICE HAVING SELECTION LINE STUD CONNECTED TO STRING SELECTION LINE | April 2023 | June 2025 | Allow | 26 | 1 | 1 | Yes | No |
| 18306092 | METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE INCLUDING CHANNEL POSTS OF DIFFERENT SHAPES | April 2023 | September 2024 | Allow | 17 | 1 | 0 | No | No |
| 18300997 | MEMORY DEVICE WITH DEFECT-FREE SLITS | April 2023 | January 2026 | Allow | 33 | 1 | 1 | No | No |
| 18126760 | Integrated Circuitry, Comprising A Pair Of Opposing Lateral Projections In Insulating Material In A Cavity | March 2023 | December 2024 | Allow | 21 | 1 | 0 | No | No |
| 18186961 | MEMORY DEVICE WITH REFORMED INSULATING LAYER AND METHOD OF FABRICATING THE SAME | March 2023 | January 2026 | Allow | 34 | 1 | 1 | No | No |
| 18182385 | SEMICONDUCTOR STRUCTURE WITH ENHANCES STRENGTH AND MANUFACTURING METHOD THEREOF | March 2023 | February 2026 | Allow | 35 | 1 | 1 | No | No |
| 18177921 | PACKAGE STRUCTURE WITH ADHESIVE ELEMENT OVER SEMICONDUCTOR CHIP | March 2023 | July 2025 | Allow | 28 | 1 | 1 | No | No |
| 18177055 | SEMICONDUCTOR DEVICE WITH IMPROVED CHANNEL MOBILITY | March 2023 | January 2026 | Allow | 34 | 1 | 1 | No | No |
| 18172076 | MICROELECTRONIC DEVICES WITH IMPROVED ALIGNMENT FOR CONTACT STRUCTURES | February 2023 | July 2025 | Allow | 29 | 1 | 1 | Yes | No |
| 18110935 | METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE WITH A LOW VOLTAGE TRANSISTOR | February 2023 | January 2025 | Allow | 23 | 1 | 0 | No | No |
| 18169877 | MEMORY DEVICE WITH REDUCED GLOBAL SELECTION LINE STRUCTURES AND METHOD OF FABRICATING THE SAME | February 2023 | February 2026 | Allow | 36 | 1 | 1 | No | No |
| 18169187 | ELECTRONIC DEVICE COMPRISING AN ELECTROSTATIC DISCHARGE PROTECTIVE UNIT | February 2023 | January 2025 | Allow | 23 | 1 | 0 | No | No |
| 18168582 | MEMORY STRUCTURE WITH REDUCED BRIDGING AND MANUFACTURING METHOD THEREOF | February 2023 | December 2025 | Allow | 34 | 1 | 1 | No | No |
| 18106306 | MEMORY DEVICE WITH MULTI CHANNEL STRUCTURES AND METHOD OF MANUFACTURING THE SAME | February 2023 | September 2025 | Allow | 31 | 1 | 0 | No | No |
| 18163299 | THREE-DIMENSIONAL MEMORY DEVICE WITH LOW RESISTANCE BUFFER PILLAR | February 2023 | December 2025 | Allow | 34 | 1 | 1 | No | No |
| 18103070 | SEMICONDUCTOR DEVICES WITH STRING SELECT CHANNEL LAYER | January 2023 | December 2024 | Allow | 22 | 1 | 1 | No | No |
| 18005929 | THREE-DIMENSIONAL FLASH MEMORY HAVING IMPROVED INTEGRATION DENSITY | January 2023 | March 2026 | Allow | 38 | 2 | 0 | No | No |
| 18098552 | SEMICONDUCTOR MEMORY DEVICE WITH DECREASED PARASITIC CAPACITANCE | January 2023 | November 2025 | Allow | 34 | 0 | 1 | No | No |
| 18154982 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH DIFFUSION STOP LAYER AND ELECTRONIC SYSTEM INCLUDING THE SAME | January 2023 | January 2026 | Allow | 36 | 1 | 1 | Yes | No |
| 18154919 | SEMICONDUCTOR PACKAGE WITH INCREASED THERMAL DISSIPATION | January 2023 | February 2025 | Allow | 25 | 2 | 1 | Yes | No |
| 18154210 | THREE-DIMENSIONAL FLASH MEMORY WITH REDUCED WIRE LENGTH AND MANUFACTURING METHOD THEREFOR | January 2023 | October 2024 | Allow | 21 | 1 | 0 | Yes | No |
| 18094007 | SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE PATTERN WITH IMPROVED RETENTION CHARACTERISTICS | January 2023 | June 2025 | Allow | 29 | 1 | 1 | Yes | No |
| 18151379 | SEMICONDUCTOR STORAGE DEVICE WITH REDUCED THRESHOLD VOLTAGE FLUCTUATIONS | January 2023 | February 2026 | Allow | 37 | 1 | 1 | No | No |
| 18090981 | THREE-DIMENSIONAL MEMORY WITH STACKED SELECT-GATE STRUCTURES | December 2022 | October 2025 | Allow | 33 | 1 | 1 | No | No |
| 18083431 | Metal-Containing Structures, and Methods of Treating Metal-Containing Material to Increase Grain Size and/or Reduce Contaminant Concentration | December 2022 | July 2025 | Allow | 31 | 1 | 0 | No | No |
| 18081040 | SEMICONDUCTOR MEMORY DEVICE WITH REDUCED STEPPED AREA | December 2022 | March 2026 | Allow | 39 | 1 | 1 | No | No |
| 18079043 | Conductive Structure Connection With Interconnect Structure | December 2022 | December 2024 | Allow | 24 | 1 | 1 | No | No |
| 18075487 | THREE-DIMENSIONAL NAND MEMORY DEVICE WITH REDUCED RESISTANCE-CAPACITANCE DELAY | December 2022 | March 2025 | Allow | 27 | 2 | 1 | Yes | No |
| 17994936 | METHODS OF FORMING 3D NAND STRUCTURES WITH DECREASED PITCH | November 2022 | April 2025 | Allow | 28 | 3 | 0 | Yes | No |
| 17993997 | MEMORY DEVICE WITH INCREASED DENSITY AND METHOD OF FABRICATING THE SAME | November 2022 | January 2026 | Allow | 38 | 1 | 1 | No | No |
| 17991337 | MULTI-LED STRUCTURES WITH SINGLE CURRENT AND VOLTAGE SUPPLIES | November 2022 | August 2025 | Allow | 33 | 1 | 1 | No | No |
| 17990148 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE THROUGH ETCH STOP LAYER CONVERSION | November 2022 | October 2025 | Abandon | 35 | 3 | 0 | No | No |
| 17986371 | VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING GATE ELECTRODES WITH METAL-DOPED GRAPHENE | November 2022 | December 2025 | Allow | 37 | 1 | 1 | Yes | No |
| 18051763 | SEMICONDUCTOR MEMORY DEVICE WITH MESH SUPPORT STRUCTURE | November 2022 | February 2026 | Allow | 39 | 1 | 1 | No | No |
| 18047109 | Method of Manufacturing Semiconductor Device Comprising Doping Element in the Charge Storage Layer | October 2022 | July 2025 | Allow | 33 | 0 | 1 | No | No |
| 18046756 | ELECTROMAGNETIC SHIELDS WITH BONDING WIRES FOR SUB-MODULES | October 2022 | June 2025 | Allow | 32 | 2 | 1 | No | No |
| 17936842 | PIXEL STRUCTURE, DISPLAY APPARATUS INCLUDING THE PIXEL STRUCTURE, AND METHOD OF MANUFACTURING THE PIXEL STRUCTURE FOR INCREASING EFFICIENCY OF LIGHT EMISSION | September 2022 | August 2025 | Allow | 34 | 3 | 1 | Yes | No |
| 17932942 | THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC | September 2022 | September 2025 | Allow | 36 | 1 | 1 | No | No |
| 17943172 | THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN-SELECT-GATE CUT STRUCTURES AND METHODS FOR FORMING THE SAME | September 2022 | February 2025 | Allow | 30 | 2 | 1 | No | No |
| 17940441 | METHOD FOR FORMING A THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH AN IMPROVED ETCHING STEP | September 2022 | January 2025 | Allow | 28 | 1 | 1 | Yes | No |
| 17898148 | MEMORY DEVICE WITH PERIODICALLY VARYING MEMORY FILM THICKNESS | August 2022 | August 2025 | Allow | 36 | 1 | 1 | No | No |
| 17820031 | MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES | August 2022 | January 2025 | Allow | 29 | 1 | 1 | No | No |
| 17882053 | MEMORY CIRCUITRY AND METHOD USED IN FORMING MEMORY CIRCUITRY THAT HAS AN INSULATOR TIER DIRECTLY BELOW A LOWEST UPPER FIRST TIER AND DIRECTLY ABOVE AN UPPERMOST LOWER FIRST TIER | August 2022 | January 2026 | Allow | 42 | 2 | 1 | No | No |
| 17881184 | DISPLAY DEVICE WITH REDUCED PARASITIC CAPACITANCE | August 2022 | September 2025 | Allow | 38 | 1 | 1 | No | No |
| 17876036 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE | July 2022 | May 2025 | Allow | 34 | 0 | 1 | No | No |
| 17875527 | CONTACT OVER ACTIVE GATE STRUCTURE | July 2022 | September 2024 | Allow | 26 | 3 | 0 | Yes | No |
| 17876326 | LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE | July 2022 | October 2025 | Allow | 38 | 1 | 1 | No | No |
| 17874927 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH INCREASED ELECTRON MOBILITY AND ELECTRONIC SYSTEM INCLUDING THE SAME | July 2022 | October 2025 | Allow | 39 | 1 | 1 | Yes | No |
| 17872894 | METHOD FOR EVALUATING NON-UNIFORM STRESS | July 2022 | April 2025 | Allow | 32 | 1 | 1 | No | No |
| 17813847 | ELECTRONIC DEVICES INCLUDING AN IMPLANT STRUCTURE, FOR PROTECTION AGAINST CORROSION, AND RELATED SYSTEMS AND METHODS | July 2022 | December 2025 | Allow | 41 | 2 | 1 | No | No |
| 17813795 | ELECTRONIC DEVICES COMPRISING PILLARS EXTENDING THROUGH A SEMICONDUCTOR MATERIAL AND ADJACENT TO A SOURCE IMPLANT REGION, AND RELATED ELECTRONIC SYSTEMS AND METHODS | July 2022 | February 2026 | Allow | 43 | 2 | 1 | No | No |
| 17861573 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING VERTICAL STRUCTURES AND SEED LAYER | July 2022 | August 2025 | Allow | 37 | 1 | 1 | Yes | No |
| 17851310 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE WITH INCREASED PROCESS MARGIN | June 2022 | January 2025 | Allow | 31 | 1 | 1 | Yes | No |
| 17844585 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH SELECTIVELY FORMED NITRIDE FILM | June 2022 | July 2025 | Allow | 37 | 1 | 1 | No | No |
| 17806842 | VERTICAL MEMORY DEVICE WITH MULTIPLE SUPPORT LAYERS | June 2022 | January 2025 | Allow | 31 | 1 | 1 | Yes | No |
| 17837227 | MEMORY DEVICE WITH MULTI-LAYERED CHARGE STORAGE STACK | June 2022 | June 2025 | Allow | 36 | 1 | 1 | Yes | No |
| 17836799 | MEMORY DEVICE WITH REDUCED BENDING STACK | June 2022 | May 2024 | Allow | 24 | 1 | 1 | No | No |
| 17805167 | MICROELECTRONIC DEVICES INCLUDING IMPLANT REGIONS ADJACENT TO DIELECTRIC SLOT STRUCTURES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS | June 2022 | October 2025 | Allow | 41 | 1 | 1 | No | No |
| 17664479 | Dielectric Spacer to Prevent Contacting Shorting | May 2022 | March 2024 | Allow | 22 | 1 | 0 | No | No |
| 17740039 | METHOD FOR MANUFACTURING PEROVSKITE NANOCRYSTAL PARTICLE LIGHT-EMITTER WHERE ORGANIC LIGAND IS SUBSTITUTED, NANOCRYSTAL PARTICLE LIGHT-EMITTER MANUFACTURED THEREBY, AND LIGHT EMITTING DEVICE USING SAME | May 2022 | June 2024 | Allow | 25 | 0 | 0 | No | No |
| 17705885 | SEMICONDUCTOR DEVICE STRUCTURE WITH ETCH STOP LAYER FOR REDUCING RC DELAY | March 2022 | September 2024 | Allow | 30 | 2 | 0 | No | No |
| 17699931 | STACKED OFFSET SEMICONDUCTOR PACKAGE | March 2022 | May 2025 | Allow | 37 | 1 | 0 | Yes | No |
| 17588938 | THIN FILM TRANSISTORS WITH SPACER CONTROLLED GATE LENGTH | January 2022 | January 2024 | Allow | 24 | 1 | 0 | Yes | No |
| 17556745 | THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD FOR FORMING THE SAME | December 2021 | December 2023 | Allow | 24 | 1 | 0 | Yes | No |
| 17549685 | ADDITIONAL SILICIDE LAYER ON TOP OF STAIRCASE FOR 3D NAND WL CONTACT CONNECTION | December 2021 | November 2025 | Allow | 47 | 2 | 0 | Yes | No |
| 17457787 | THREE-DIMENSIONAL MEMORY DEVICE WITH CHARGE TRAP LAYER INCLUDING CARBON REGION AND FABRICATION METHOD THEREOF | December 2021 | July 2025 | Allow | 43 | 4 | 0 | Yes | No |
| 17540190 | MANUFACTURING METHOD OF THREE-DIMENSIONAL MEMORY DEVICE WITH IMPROVED RC DELAY | December 2021 | February 2024 | Allow | 26 | 1 | 0 | No | No |
| 17529331 | SEMICONDUCTOR DEVICE INCLUDING SUPPORT STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME | November 2021 | February 2025 | Allow | 39 | 1 | 1 | Yes | No |
| 17528574 | MRAM MTJ WITH DIRECTLY COUPLED TOP ELECTRODE CONNECTION | November 2021 | August 2024 | Allow | 33 | 2 | 0 | Yes | No |
| 17451583 | METHOD OF FORMING A THREE-DIMENSIONAL NAND MEMORY DEVICE WITH REDUCED RC DELAY | October 2021 | September 2024 | Allow | 35 | 2 | 0 | Yes | No |
| 17501951 | Methods of Forming Integrated Assemblies with Improved Charge Migration Impedance | October 2021 | July 2024 | Allow | 33 | 0 | 0 | No | No |
| 17500297 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH IMPROVED GATE INSULATION STEP | October 2021 | July 2024 | Allow | 33 | 0 | 1 | No | No |
| 17488879 | THREE-DIMENSIONAL MEMORY DEVICE WITH IMPROVED CHARGE LATERAL MIGRATION AND METHOD FOR FORMING THE SAME | September 2021 | August 2024 | Allow | 34 | 2 | 0 | No | No |
| 17488915 | THREE-DIMENSIONAL MEMORY DEVICE WITH RESTRAINED CHARGE MIGRATION AND METHOD FOR FORMING THE SAME | September 2021 | September 2024 | Allow | 35 | 1 | 0 | No | No |
| 17488576 | SEMICONDUCTOR DEVICE INCLUDING SEPARATION PATTERNS AND AN ELECTRONIC SYSTEM | September 2021 | August 2024 | Allow | 35 | 1 | 1 | No | No |
| 17476206 | METHOD OF FORMING VERTICAL MEMORY DEVICES WITH IMPROVED DUMMY CHANNEL STRUCTURES | September 2021 | July 2024 | Allow | 34 | 1 | 0 | No | No |
| 17465496 | SEMICONDUCTOR MEMORY DEVICE WITH INCREASED RELIABILITY AND METHOD FOR MANUFACTURING THE SAME | September 2021 | October 2024 | Allow | 38 | 1 | 1 | No | No |
| 17460116 | SELF-ALIGNED DISPLAY APPARTUS | August 2021 | March 2024 | Allow | 30 | 2 | 0 | Yes | No |
| 17412933 | METHOD FOR MANUFACTURING A SEMICONDUCTOR STORAGE DEVICE INCLUDING A DIVISION FILM | August 2021 | August 2024 | Allow | 36 | 1 | 1 | No | No |
| 17411805 | ORGANIC SEMICONDUCTOR DEVICE WITH PROTECTIVE SPINEL OXIDE LAYER | August 2021 | January 2026 | Allow | 52 | 5 | 1 | Yes | No |
| 17410895 | SEMICONDUCTOR DEVICE WITH ADSORPTION PROMOTING LAYER | August 2021 | December 2024 | Allow | 40 | 2 | 1 | No | No |
No appeal data available for this record. This may indicate that no appeals have been filed or decided for applications in this dataset.
Examiner RAMALLO, GUSTAVO G works in Art Unit 2812 and has examined 70 patent applications in our dataset. With an allowance rate of 100.0%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 35 months.
Examiner RAMALLO, GUSTAVO G's allowance rate of 100.0% places them in the 96% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.
On average, applications examined by RAMALLO, GUSTAVO G receive 1.56 office actions before reaching final disposition. This places the examiner in the 29% percentile for office actions issued. This examiner issues fewer office actions than average, which may indicate efficient prosecution or a more lenient examination style.
The median time to disposition (half-life) for applications examined by RAMALLO, GUSTAVO G is 35 months. This places the examiner in the 40% percentile for prosecution speed. Prosecution timelines are slightly slower than average with this examiner.
Conducting an examiner interview provides a +0.0% benefit to allowance rate for applications examined by RAMALLO, GUSTAVO G. This interview benefit is in the 15% percentile among all examiners. Note: Interviews show limited statistical benefit with this examiner compared to others, though they may still be valuable for clarifying issues.
When applicants file an RCE with this examiner, 43.8% of applications are subsequently allowed. This success rate is in the 95% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.
This examiner enters after-final amendments leading to allowance in 35.7% of cases where such amendments are filed. This entry rate is in the 53% percentile among all examiners. Strategic Recommendation: This examiner shows above-average receptiveness to after-final amendments. If your amendments clearly overcome the rejections and do not raise new issues, consider filing after-final amendments before resorting to an RCE.
When applicants file petitions regarding this examiner's actions, 0.0% are granted (fully or in part). This grant rate is in the 4% percentile among all examiners. Strategic Note: Petitions are rarely granted regarding this examiner's actions compared to other examiners. Ensure you have a strong procedural basis before filing a petition, as the Technology Center Director typically upholds this examiner's decisions.
Examiner's Amendments: This examiner makes examiner's amendments in 0.0% of allowed cases (in the 24% percentile). This examiner rarely makes examiner's amendments compared to other examiners. You should expect to make all necessary claim amendments yourself through formal amendment practice.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 14.3% of allowed cases (in the 91% percentile). Per MPEP § 714.14, a Quayle action indicates that all claims are allowable but formal matters remain. This examiner frequently uses Quayle actions compared to other examiners, which is a positive indicator that once substantive issues are resolved, allowance follows quickly.
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.