Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18796736 | DISPLAY DEVICE | August 2024 | January 2026 | Allow | 18 | 0 | 0 | No | No |
| 18366410 | TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING | August 2023 | February 2026 | Allow | 31 | 1 | 0 | No | No |
| 18229682 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | August 2023 | October 2025 | Allow | 27 | 1 | 1 | Yes | No |
| 18364352 | MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME | August 2023 | October 2025 | Allow | 26 | 1 | 1 | No | No |
| 18357464 | MULTI-GATE DEVICE AND RELATED METHODS | July 2023 | August 2025 | Allow | 24 | 1 | 0 | No | No |
| 18357795 | METHOD FOR FORMING SEMICONDUCTOR DEVICE | July 2023 | July 2025 | Allow | 24 | 1 | 0 | No | No |
| 18349617 | SEMICONDUCTOR DEVICE WITH VARYING NUMBERS OF CHANNEL LAYERS AND METHOD OF FABRICATION THEREOF | July 2023 | October 2025 | Allow | 28 | 1 | 0 | No | No |
| 18348818 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | July 2023 | August 2025 | Allow | 26 | 1 | 0 | No | No |
| 18344441 | Semiconductor Device and Method | June 2023 | July 2025 | Allow | 24 | 1 | 0 | No | No |
| 18136485 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | April 2023 | January 2026 | Allow | 33 | 1 | 1 | No | No |
| 18134117 | METAL OXIDE AND SEMICONDUCTOR DEVICE | April 2023 | June 2025 | Allow | 26 | 1 | 0 | No | No |
| 18297824 | DIELECTRIC INNER SPACERS IN MULTI-GATE FIELD-EFFECT TRANSISTORS | April 2023 | April 2025 | Allow | 24 | 1 | 0 | No | No |
| 18192146 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | March 2023 | September 2025 | Allow | 30 | 0 | 1 | No | No |
| 18123653 | SEMICONDUCTOR DEVICES | March 2023 | August 2025 | Allow | 29 | 1 | 0 | Yes | No |
| 18186227 | FLEXIBLE SELF-ALIGNED POWER VIA SHAPE WITH GATE CUT FIRST | March 2023 | February 2026 | Allow | 35 | 1 | 1 | Yes | No |
| 18120547 | INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME | March 2023 | April 2025 | Allow | 25 | 0 | 1 | No | No |
| 18178665 | METHOD OF SELF-ALIGNED DIELECTRIC WALL FORMATION FOR FORKSHEET APPLICATION | March 2023 | October 2025 | Allow | 32 | 1 | 1 | Yes | No |
| 18175821 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | February 2023 | February 2026 | Allow | 35 | 1 | 0 | No | No |
| 18171362 | LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS | February 2023 | February 2026 | Allow | 36 | 1 | 1 | Yes | No |
| 18168294 | GATE-ALL-AROUND DEVICES WITH OPTIMIZED GATE SPACERS AND GATE END DIELECTRIC | February 2023 | May 2025 | Allow | 27 | 2 | 0 | No | No |
| 18109205 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | February 2023 | September 2025 | Allow | 31 | 2 | 0 | Yes | No |
| 18106540 | INTEGRATED CIRCUIT DEVICE | February 2023 | October 2025 | Allow | 32 | 1 | 0 | Yes | No |
| 18162350 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE | January 2023 | August 2025 | Allow | 31 | 0 | 1 | No | No |
| 18161219 | IC DEVICE WITH VERTICALLY-GRADED SILICON GERMANIUM REGION ADJACENT DEVICE CHANNEL AND METHOD FOR FORMING | January 2023 | June 2025 | Allow | 29 | 0 | 1 | Yes | No |
| 18102928 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | January 2023 | March 2025 | Allow | 25 | 1 | 0 | No | No |
| 18103265 | SPLIT GATE NON-VOLATILE MEMORY CELLS, HV AND LOGIC DEVICES WITH FINFET STRUCTURES, AND METHOD OF MAKING SAME | January 2023 | March 2026 | Allow | 37 | 2 | 1 | No | No |
| 18158036 | AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES | January 2023 | April 2025 | Allow | 27 | 2 | 0 | Yes | No |
| 18097255 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | January 2023 | December 2025 | Allow | 35 | 1 | 1 | No | No |
| 18153304 | METHOD FOR FORMING SEMICONDUCTOR DEVICE | January 2023 | January 2026 | Allow | 36 | 0 | 1 | No | No |
| 18151481 | TRANSISTOR AND SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND FABRICATION METHOD THEREOF | January 2023 | August 2025 | Allow | 31 | 0 | 1 | No | No |
| 18151575 | METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS | January 2023 | February 2025 | Allow | 25 | 1 | 0 | No | No |
| 18150266 | COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE | January 2023 | October 2025 | Allow | 34 | 1 | 1 | No | No |
| 18089634 | HYBRID CMOS WITH FIN AND NANOSHEET ARCHITECTURES | December 2022 | January 2026 | Allow | 36 | 2 | 1 | Yes | No |
| 18085886 | SEMICONDUCTOR DEVICE | December 2022 | January 2026 | Allow | 37 | 1 | 1 | No | No |
| 18066354 | Inner Spacer Formation in Multi-Gate Transistors | December 2022 | February 2025 | Allow | 26 | 1 | 0 | No | No |
| 18065353 | Method for Forming a Stacked FET Device | December 2022 | July 2025 | Allow | 31 | 0 | 0 | No | No |
| 18064764 | FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME | December 2022 | December 2024 | Allow | 24 | 1 | 0 | No | No |
| 18063859 | Vertically Stacked Transistor Structures | December 2022 | October 2025 | Allow | 34 | 1 | 0 | Yes | No |
| 18063991 | Method for Forming a Semiconductor Device | December 2022 | September 2025 | Allow | 33 | 1 | 0 | No | No |
| 18077203 | TRANSISTOR WITH FIN STRUCTURE AND NANOSHEET AND FABRICATING METHOD OF THE SAME | December 2022 | September 2025 | Allow | 34 | 1 | 1 | Yes | No |
| 18061688 | Gate Dielectric Having A Non-Uniform Thickness Profile | December 2022 | August 2025 | Allow | 32 | 3 | 0 | Yes | No |
| 18075323 | IMAGE SENSOR DEVICE | December 2022 | December 2024 | Allow | 24 | 1 | 0 | No | No |
| 18072784 | SEMICONDUCTOR DEVICES HAVING SPACER STRUCTURES | December 2022 | August 2025 | Allow | 32 | 0 | 1 | No | No |
| 18071467 | DEVICE, METHOD AND SYSTEM TO PROVIDE A STRESSED CHANNEL OF A TRANSISTOR | November 2022 | March 2025 | Allow | 27 | 0 | 1 | Yes | No |
| 17999393 | SEMICONDUCTOR DEVICE | November 2022 | March 2026 | Abandon | 40 | 2 | 0 | No | No |
| 17961696 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | October 2022 | February 2025 | Allow | 28 | 1 | 0 | No | No |
| 17947363 | GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES | September 2022 | February 2025 | Allow | 29 | 1 | 0 | No | No |
| 17892827 | Bulk Nanosheet with Dielectric Isolation | August 2022 | March 2025 | Allow | 31 | 1 | 0 | No | No |
| 17820022 | DISPLAY PANEL | August 2022 | October 2024 | Allow | 26 | 1 | 0 | No | No |
| 17887320 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | August 2022 | May 2025 | Allow | 33 | 0 | 0 | No | No |
| 17884773 | METHOD OF MANUFACTURING A REPLACEMENT METAL GATE DEVICE STRUCTURE | August 2022 | August 2025 | Allow | 37 | 2 | 1 | No | No |
| 17885058 | METHOD FOR FORMING SEMICONDUCTOR DEVICE | August 2022 | September 2024 | Allow | 26 | 0 | 0 | No | No |
| 17818390 | FINFET DEVICE AND METHOD OF FORMING SAME | August 2022 | January 2025 | Allow | 30 | 2 | 0 | No | No |
| 17881866 | Semiconductor Devices and Methods of Manufacture | August 2022 | February 2025 | Allow | 31 | 2 | 0 | No | No |
| 17876573 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | July 2022 | February 2025 | Allow | 30 | 2 | 1 | Yes | No |
| 17875468 | HIGH-VOLTAGE NANO-SHEET TRANSISTOR | July 2022 | April 2025 | Allow | 33 | 3 | 0 | Yes | No |
| 17874295 | Transistor Gate Profile Optimization | July 2022 | April 2025 | Allow | 33 | 1 | 1 | Yes | No |
| 17795572 | DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY MODULE, AND DISPLAY APPARATUS | July 2022 | September 2025 | Allow | 38 | 2 | 0 | No | No |
| 17815185 | FINFET PITCH SCALING | July 2022 | April 2024 | Allow | 21 | 0 | 0 | No | No |
| 17874267 | Semiconductor Device With L-Shape Conductive Feature And Methods Of Forming The Same | July 2022 | October 2024 | Allow | 27 | 1 | 0 | No | No |
| 17874022 | GATE-ALL-AROUND DEVICES WITH OPTIMIZED GATE SPACERS AND GATE END DIELECTRIC | July 2022 | March 2025 | Allow | 32 | 2 | 1 | No | No |
| 17814282 | AIR SPACER FORMATION FOR SEMICONDUCTOR DEVICES | July 2022 | February 2025 | Allow | 31 | 3 | 0 | Yes | No |
| 17866880 | STANDARD-CELL LAYOUT STRUCTURE WITH HORN POWER AND SMART METAL CUT | July 2022 | October 2024 | Allow | 26 | 0 | 1 | No | No |
| 17856157 | SEMICONDUCTOR DEVICES | July 2022 | May 2025 | Allow | 34 | 2 | 1 | Yes | No |
| 17855658 | SEMICONDUCTOR DEVICE | June 2022 | August 2024 | Allow | 25 | 1 | 0 | No | No |
| 17855506 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | June 2022 | September 2024 | Allow | 27 | 1 | 0 | No | No |
| 17855586 | INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL KEEPER OR POWER GATE FOR BACKSIDE POWER DELIVERY | June 2022 | February 2026 | Allow | 43 | 1 | 0 | No | No |
| 17854615 | METHOD FOR SEMICONDUCTOR DEVICE STRUCTURE | June 2022 | July 2024 | Allow | 25 | 1 | 0 | No | No |
| 17852806 | Alignment Structure for Semiconductor Device and Method of Forming Same | June 2022 | March 2025 | Allow | 32 | 2 | 0 | No | No |
| 17849198 | PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION | June 2022 | September 2024 | Allow | 26 | 1 | 0 | No | No |
| 17848605 | SEMICONDUCTOR DEVICE AND METHOD | June 2022 | October 2025 | Allow | 40 | 1 | 1 | No | No |
| 17848374 | GATE STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME | June 2022 | August 2024 | Allow | 25 | 1 | 1 | No | No |
| 17832866 | Seal Ring For Semiconductor Device With Gate-All-Around Transistors | June 2022 | September 2025 | Allow | 40 | 0 | 1 | No | No |
| 17744088 | METHODS FOR FORMING PATTERN LAYOUT, MASK, AND SEMICONDUCTOR STRUCTURE | May 2022 | May 2025 | Allow | 36 | 1 | 1 | No | No |
| 17727606 | METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE | April 2022 | June 2024 | Allow | 25 | 1 | 0 | No | No |
| 17723532 | INTEGRATED CIRCUITS AND METHOD OF MANUFACTURING THE SAME | April 2022 | March 2024 | Allow | 23 | 1 | 0 | No | No |
| 17722572 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME | April 2022 | May 2025 | Allow | 37 | 4 | 0 | No | No |
| 17717684 | SEMICONDUCTOR DEVICES WITH AIR GATE SPACER AND AIR GATE CAP | April 2022 | February 2024 | Allow | 22 | 0 | 1 | No | No |
| 17647410 | SYSTEMS AND METHODS FOR SUPPORTING AND CONVEYING A SUBSTRATE | January 2022 | January 2024 | Allow | 24 | 1 | 1 | No | No |
| 17567268 | Array Of Capacitors, Array Of Memory Cells, Methods Of Forming An Array Of Capacitors, And Methods Of Forming An Array Of Memory Cells | January 2022 | July 2024 | Allow | 30 | 1 | 0 | No | No |
| 17567804 | ORGANIC LIGHT EMITTING DISPLAY DEVICE | January 2022 | February 2025 | Allow | 37 | 4 | 0 | Yes | No |
| 17543235 | STAIRCASE PATTERNING FOR 3D NAND DEVICES | December 2021 | June 2024 | Allow | 31 | 4 | 0 | Yes | No |
| 17455938 | FORKSHEET TRANSISTOR DEVICE WITH AIR GAP SPINE | November 2021 | October 2025 | Allow | 47 | 1 | 1 | Yes | No |
| 17453869 | Cut-Fin Isolation Regions and Method Forming Same | November 2021 | October 2024 | Allow | 35 | 1 | 0 | No | No |
| 17453727 | APPARATUSES INCLUDING FINFETS HAVING DIFFERENT GATE OXIDE CONFIGURATIONS, AND RELATED COMPUTING SYSTEMS | November 2021 | September 2024 | Allow | 34 | 1 | 1 | No | No |
| 17488830 | INTEGRATED CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND SEAL RING STRUCTURE WITH MONITORING PATTERN | September 2021 | November 2024 | Allow | 37 | 0 | 1 | No | No |
| 17463019 | FORMING DIELECTRIC SIDEWALL AND BOTTOM DIELECTRIC ISOLATION IN FORK-FET DEVICES | August 2021 | March 2025 | Allow | 42 | 1 | 1 | Yes | No |
| 17446479 | STRAIN GENERATION AND ANCHORING IN GATE-ALL-AROUND FIELD EFFECT TRANSISTORS | August 2021 | August 2025 | Allow | 48 | 3 | 1 | Yes | No |
| 17461247 | ACTIVE REGION CUT PROCESS | August 2021 | April 2024 | Allow | 32 | 0 | 0 | No | No |
| 17461322 | INTEGRATED CIRCUIT DEVICE WITH REDUCED VIA RESISTANCE | August 2021 | January 2025 | Allow | 40 | 2 | 0 | No | No |
| 17460488 | Mandrel Structures and Methods of Fabricating the Same in Semiconductor Devices | August 2021 | August 2024 | Allow | 36 | 0 | 1 | No | No |
| 17460198 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF | August 2021 | November 2024 | Allow | 39 | 1 | 1 | No | No |
| 17459784 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF | August 2021 | October 2025 | Allow | 49 | 4 | 1 | Yes | No |
| 17410326 | INTEGRATED CIRCUIT DEVICES | August 2021 | December 2024 | Allow | 40 | 2 | 1 | Yes | No |
| 17399748 | Multi-Gate Field-Effect Transistors In Integrated Circuits | August 2021 | November 2024 | Allow | 39 | 1 | 1 | No | No |
| 17398668 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME | August 2021 | August 2024 | Allow | 36 | 2 | 1 | No | No |
| 17395879 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | August 2021 | June 2024 | Allow | 34 | 1 | 1 | No | No |
| 17389685 | SEMICONDUCTOR STRUCTURE WITH COMPOSITE OXIDE LAYER | July 2021 | December 2024 | Allow | 40 | 3 | 1 | Yes | No |
| 17388005 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME | July 2021 | June 2024 | Allow | 34 | 3 | 1 | No | No |
| 17384908 | BURIED POWER RAIL CONTACT | July 2021 | March 2024 | Allow | 32 | 2 | 1 | Yes | No |
No appeal data available for this record. This may indicate that no appeals have been filed or decided for applications in this dataset.
Examiner HOANG, TUAN A works in Art Unit 2898 and has examined 43 patent applications in our dataset. With an allowance rate of 93.0%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 39 months.
Examiner HOANG, TUAN A's allowance rate of 93.0% places them in the 80% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.
On average, applications examined by HOANG, TUAN A receive 2.63 office actions before reaching final disposition. This places the examiner in the 77% percentile for office actions issued. This examiner issues more office actions than most examiners, which may indicate thorough examination or difficulty in reaching agreement with applicants.
The median time to disposition (half-life) for applications examined by HOANG, TUAN A is 39 months. This places the examiner in the 27% percentile for prosecution speed. Prosecution timelines are slightly slower than average with this examiner.
Conducting an examiner interview provides a -1.2% benefit to allowance rate for applications examined by HOANG, TUAN A. This interview benefit is in the 10% percentile among all examiners. Note: Interviews show limited statistical benefit with this examiner compared to others, though they may still be valuable for clarifying issues.
When applicants file an RCE with this examiner, 25.0% of applications are subsequently allowed. This success rate is in the 38% percentile among all examiners. Strategic Insight: RCEs show below-average effectiveness with this examiner. Carefully evaluate whether an RCE or continuation is the better strategy.
This examiner enters after-final amendments leading to allowance in 30.0% of cases where such amendments are filed. This entry rate is in the 43% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.
Examiner's Amendments: This examiner makes examiner's amendments in 0.0% of allowed cases (in the 28% percentile). This examiner makes examiner's amendments less often than average. You may need to make most claim amendments yourself.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.0% of allowed cases (in the 34% percentile). This examiner issues Quayle actions less often than average. Allowances may come directly without a separate action for formal matters.
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.