Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 17119711 | Embedded Pad Structures of Three-Dimensional Memory Devices and Fabrication Methods Thereof | December 2020 | September 2024 | Allow | 45 | 5 | 1 | Yes | No |
| 17099959 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME | November 2020 | April 2025 | Allow | 53 | 6 | 1 | Yes | No |
| 17041162 | OLED DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE | September 2020 | June 2024 | Allow | 44 | 2 | 1 | No | No |
| 17030221 | CO-INTEGRATED GALLIUM NITRIDE (GAN) AND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) INTEGRATED CIRCUIT TECHNOLOGY | September 2020 | June 2025 | Allow | 57 | 3 | 1 | No | No |
| 16979190 | ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL AND MANUFACTURING METHOD THEREOF | September 2020 | May 2024 | Abandon | 44 | 2 | 1 | No | No |
| 17009130 | METHOD OF EVALUATING SiC SUBSTRATE, METHOD OF MANUFACTURING SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING SiC DEVICE | September 2020 | October 2024 | Allow | 50 | 3 | 1 | Yes | Yes |
| 16995055 | NANOWIRE-BASED TRANSPARENT CONDUCTORS AND APPLICATIONS THEREOF | August 2020 | June 2024 | Abandon | 46 | 1 | 1 | No | No |
| 16984491 | Encapsulated Light Emitting Diodes for Selective Fluidic Assembly | August 2020 | November 2022 | Allow | 27 | 6 | 0 | No | Yes |
| 16966015 | DISPLAY PANEL AND METHOD OF MANUFACTURING THEREOF | July 2020 | January 2024 | Allow | 42 | 1 | 1 | No | No |
| 16941438 | DISPLAY DEVICE AND ELECTRONIC APPARATUS | July 2020 | July 2024 | Abandon | 48 | 6 | 1 | No | No |
| 16959757 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF AND DRIVING SUBSTRATE | July 2020 | April 2024 | Allow | 45 | 5 | 1 | No | No |
| 16017102 | METHODS AND SYSTEMS FOR PERFORMING TEST AND CALIBRATION OF INTEGRATED SENSORS | June 2018 | March 2019 | Allow | 9 | 1 | 0 | Yes | No |
| 15578248 | INVERTED QUANTUM DOT LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF | November 2017 | October 2019 | Allow | 23 | 2 | 1 | No | No |
| 15482086 | TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF | April 2017 | October 2018 | Allow | 19 | 1 | 1 | No | No |
| 15324184 | THIN-FILM PACKAGE STRUCTURE AND OLED COMPONENT | January 2017 | July 2019 | Allow | 31 | 2 | 1 | No | No |
| 15377409 | HETERO-INTEGRATION OF III-N MATERIAL ON SILICON | December 2016 | July 2017 | Allow | 8 | 2 | 0 | Yes | No |
| 15251222 | FULLY-DEPLETED SILICON-ON-INSULATOR TRANSISTORS | August 2016 | February 2018 | Allow | 17 | 1 | 0 | Yes | No |
| 15212313 | CIRCUIT ARRANGEMENT AND METHOD OF FORMING A CIRCUIT ARRANGEMENT | July 2016 | December 2016 | Allow | 5 | 0 | 0 | No | No |
| 15039319 | METHOD FOR IMPROVING DEFECT-FREE RATE OF LED LIGHT SOURCE, PHOSPHOR POWDER, AND LED LIGHT SOURCE | May 2016 | January 2018 | Allow | 60 | 2 | 1 | No | No |
| 15157550 | TYPE III-V AND TYPE IV SEMICONDUCTOR DEVICE FORMATION | May 2016 | August 2016 | Allow | 3 | 0 | 0 | No | No |
| 15132535 | METHOD FOR DETECTING A DEFECTIVE MEASUREMENT OF AN EXTENSIVE ELECTRICAL QUANTITY | April 2016 | March 2019 | Allow | 35 | 2 | 0 | Yes | No |
| 15099007 | CORRUGATED PACKAGE FOR MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE | April 2016 | June 2019 | Allow | 38 | 2 | 1 | No | Yes |
| 15067968 | METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE | March 2016 | December 2017 | Allow | 21 | 3 | 0 | No | No |
| 15015517 | METHODS AND APPARATUS FOR IMPROVED ELECTROMAGNETIC TRACKING AND LOCALIZATION | February 2016 | March 2019 | Allow | 37 | 2 | 1 | Yes | No |
| 14796730 | HETERO-INTEGRATION OF III-N MATERIAL ON SILICON | July 2015 | November 2016 | Allow | 16 | 2 | 1 | No | No |
| 14795322 | SUPER JUNCTION SEMICONDUCTOR DEVICE INCLUDING EDGE TERMINATION | July 2015 | August 2016 | Allow | 13 | 1 | 1 | No | No |
| 14788222 | ELECTRO-MECHANICAL SWITCHING DEVICES | June 2015 | November 2016 | Allow | 17 | 1 | 1 | No | No |
| 14745666 | METHOD AND APPARATUS PROVIDING IMPROVED THERMAL CONDUCTIVITY OF STRAIN RELAXED BUFFER | June 2015 | January 2017 | Allow | 19 | 1 | 1 | Yes | No |
| 14635946 | SEMICONDUCTOR DEVICE | March 2015 | August 2016 | Allow | 18 | 1 | 1 | No | No |
| 14634888 | SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME | March 2015 | August 2016 | Allow | 18 | 1 | 1 | No | No |
| 14418424 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP | January 2015 | January 2016 | Allow | 12 | 1 | 1 | No | No |
| 14585755 | TYPE III-V AND TYPE IV SEMICONDUCTOR DEVICE FORMATION | December 2014 | May 2016 | Allow | 16 | 1 | 1 | Yes | No |
| 14558103 | MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY MAGNETIC TUNNEL JUNCTION DEVICE | December 2014 | February 2017 | Allow | 26 | 3 | 1 | Yes | No |
| 14534865 | MOS DEVICE HAVING SHALOW TRENCH ISOLATIONS (STI) WITH DIFFERENT TAPERED PORTIONS | November 2014 | April 2015 | Allow | 5 | 1 | 0 | No | No |
| 14527488 | Apparatus and Method for Power MOS Transistor | October 2014 | January 2015 | Allow | 3 | 0 | 0 | No | No |
| 14526831 | TRANSISTOR STRUCTURES AND FABRICATION METHODS THEREOF | October 2014 | January 2017 | Allow | 27 | 3 | 1 | No | No |
| 14522626 | VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION | October 2014 | October 2015 | Allow | 12 | 0 | 1 | No | No |
| 14511769 | NON-PLANAR VERTICAL DUAL SOURCE DRIFT METAL-OXIDE SEMICONDUCTOR (VDSMOS) | October 2014 | December 2016 | Allow | 26 | 2 | 1 | No | No |
| 14485824 | CIRCUIT ARRANGEMENT AND METHOD OF FORMING A CIRCUIT ARRANGEMENT | September 2014 | April 2016 | Allow | 19 | 2 | 1 | No | No |
| 14483110 | CAPACITOR FROM SECOND LEVEL MIDDLE-OF-LINE LAYER IN COMBINATION WITH DECOUPLING CAPACITORS | September 2014 | July 2016 | Allow | 23 | 2 | 1 | Yes | No |
| 14280751 | WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE | May 2014 | September 2015 | Allow | 16 | 2 | 0 | No | No |
| 14264179 | FABRICATING FIN-TYPE FIELD EFFECT TRANSISTOR WITH PUNCH-THROUGH STOP REGION | April 2014 | June 2015 | Allow | 13 | 0 | 1 | No | No |
| 14264163 | METHODS AND STRUCTURES FOR BACK END OF LINE INTEGRATION | April 2014 | May 2015 | Allow | 12 | 0 | 1 | No | No |
| 14264280 | Resistive Random Access Memory Cells Having Shared Electrodes with Transistor Devices | April 2014 | June 2015 | Allow | 14 | 1 | 1 | No | No |
| 14138162 | SEMICONDUCTOR DEVICE HAVING BOTTOM GATE TYPE TRANSISTOR FORMED IN A WIRING LAYER | December 2013 | June 2015 | Allow | 18 | 1 | 1 | No | No |
| 14134644 | LIGHT-EMITTING ELEMENT CONTAINING ORGANIC IRIDIUM EXHIBITS BLUE-GREEN TO BLUE LIGHT EMISSION. | December 2013 | April 2017 | Allow | 40 | 5 | 1 | No | No |
| 14134097 | METHODS OF FORMING SECURED METAL GATE ANTIFUSE STRUCTURES | December 2013 | May 2015 | Allow | 17 | 2 | 1 | Yes | No |
| 14126981 | ORGANIC PHOTODIODE PROVIDED WITH AN ACTIVE ZONE COMPRISING MEANS FOR PROMOTING CHARGE CARRIER COLLECTION AND CONDUCTION | December 2013 | November 2014 | Allow | 11 | 0 | 1 | No | No |
| 14093333 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD FOR THE SAME | November 2013 | May 2014 | Allow | 5 | 0 | 0 | No | No |
| 14052129 | COMPLEMENTARY SPIN DEVICE HAVING A GATE, A SOURCE, A FIRST AND SECOND DRAIN ELECTRODE | October 2013 | March 2015 | Allow | 17 | 1 | 1 | No | No |
| 14052409 | METAL INSULATOR METAL CAPACITOR AND METHOD FOR MAKING THE SAME | October 2013 | June 2015 | Allow | 20 | 1 | 1 | Yes | No |
| 13955681 | A SUPER JUNCTION STRUCTURE HAVING A THICKNESS OF FIRST AND SECOND SEMICONDUCTOR REGIONS WHICH GRADUALLY CHANGES FROM A TRANSISTOR AREA INTO A TERMINATION AREA | July 2013 | April 2015 | Allow | 20 | 1 | 1 | No | No |
| 13880768 | OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR CHIP, A CARRIER SUBSTRATE AND A FILM | June 2013 | March 2015 | Allow | 23 | 1 | 1 | No | No |
| 13909937 | SENSOR FOR SENSING THE PRESENCE OF AT LEAST ONE FLUIDUM | June 2013 | January 2015 | Allow | 19 | 2 | 0 | No | No |
| 13757273 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE | February 2013 | April 2014 | Allow | 15 | 0 | 0 | No | No |
| 13718158 | SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES HAVING CONDUCTIVE CONTACTS POSITIONED THEREBETWEEN | December 2012 | February 2014 | Allow | 14 | 2 | 0 | Yes | No |
| 13518259 | METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE | November 2012 | November 2015 | Allow | 41 | 2 | 1 | No | No |
| 13636798 | AN OPTOELECTRONIC SEMICONDUCTOR CHIP HAVING N-CONDUCTING REGION CONNECTED FROM THE P-TYPE SIDE VIA THE SINGLE N-TYPE CONTACT ELEMENT | November 2012 | March 2015 | Allow | 30 | 2 | 1 | No | No |
| 13686954 | VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION | November 2012 | August 2014 | Allow | 20 | 0 | 1 | No | No |
| 13640868 | THIN FILM TRANSISTOR HAVING AN OXIDE SEMICONDUCTOR THIN FILM FORMED ON A MULTI-SOURCE DRAIN ELECTRODE | November 2012 | January 2015 | Allow | 27 | 2 | 1 | No | No |
| 13641086 | AN ASYMMETRIC SOURCE-DRAIN FIELD-EFFECT TRANSISTOR HAVING A MIXED SCHOTTKY/P-N JUNCTION AND METHOD OF MAKING | October 2012 | November 2014 | Allow | 25 | 1 | 1 | No | No |
| 13649932 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING AN OXIDATION PROCESS TO INCREASE THICKNESS OF A GATE INSULATION LAYER | October 2012 | January 2015 | Allow | 28 | 1 | 0 | Yes | No |
| 13646976 | SOLID-STATE IMAGE SENSING APPARATUS | October 2012 | October 2013 | Allow | 12 | 1 | 0 | No | No |
| 13617318 | SEMICONDUCTOR PACKAGES HAVING THE FIRST AND SECOND CHIP INCLINED SIDEWALLS CONTACT WITH EACH OTHER | September 2012 | August 2014 | Allow | 23 | 1 | 1 | No | No |
| 13607508 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURE THEREOF | September 2012 | October 2014 | Allow | 25 | 2 | 1 | No | No |
| 13603310 | SEMICONDUCTOR DEVICE | September 2012 | June 2014 | Allow | 21 | 1 | 1 | No | No |
| 13503284 | LIGHT EMITTING ELEMENT AND IMAGE DISPLAY APPARATUS USING THE LIGHT EMITTING ELEMENT | April 2012 | September 2013 | Allow | 17 | 1 | 0 | No | No |
| 13272886 | INFRARED PASS VISIBLE BLOCKER FOR UPCONVERSION DEVICES | October 2011 | July 2013 | Allow | 21 | 1 | 0 | No | No |
| 13272928 | UP-CONVERSION DEVICE WITH BROAD BAND ABSORBER | October 2011 | July 2013 | Allow | 21 | 1 | 0 | No | No |
| 13253268 | WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE | October 2011 | December 2013 | Allow | 27 | 2 | 1 | No | No |
| 13259196 | OPTOELECTRONIC LIGHT EXPOSURE MEMORY | September 2011 | June 2013 | Allow | 21 | 1 | 0 | No | No |
| 13229966 | SPIN WAVE DEVICE | September 2011 | March 2013 | Allow | 18 | 2 | 0 | No | No |
| 13230325 | LATERAL POWER MOSFET DEVICE HAVING A LINER LAYER FORMED ALONG THE CURRENT PATH TO REDUCE ELECTRIC RESISTANCE AND METHOD FOR MANUFACTURING THE SAME | September 2011 | February 2013 | Allow | 17 | 1 | 0 | No | No |
| 13230333 | POWER SEMICONDUCTOR DEVICE HAVING A THIN GATE INSULATING FILM WITH HIGH-K DIELECTRIC MATERIALS. AND METHOD FOR MANUFACTURING THE SAME. | September 2011 | January 2014 | Allow | 28 | 3 | 0 | No | Yes |
| 13229836 | LIGHT EMITTING DIODE (LED) PACKAGE HAVING WAVELENGTH CONVERSION MEMBER AND WAFER LEVEL FABRICATION METHOD | September 2011 | December 2012 | Allow | 15 | 1 | 0 | No | No |
| 13256091 | Lead Frame and Method For Manufacturing the Same | September 2011 | August 2013 | Allow | 23 | 3 | 0 | No | No |
| 13256214 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME | September 2011 | October 2013 | Allow | 25 | 2 | 0 | No | No |
| 13229878 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD FOR THE SAME | September 2011 | August 2013 | Allow | 23 | 3 | 0 | No | No |
| 13230360 | METHODS OF FORMING SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES | September 2011 | October 2012 | Allow | 13 | 1 | 0 | No | No |
| 13217416 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE | August 2011 | September 2013 | Allow | 25 | 2 | 0 | No | No |
| 13169542 | COLLAPSABLE GATE FOR DEPOSITED NANOSTRUCTURES | June 2011 | March 2013 | Allow | 21 | 1 | 1 | No | No |
| 13116670 | SEMICONDUCTOR DEVICE HAVING A TRACE COMPRISES A BEVELED EDGE | May 2011 | July 2015 | Allow | 50 | 3 | 1 | No | Yes |
| 13077681 | METHODS OF FORMING SECURED METAL GATE ANTIFUSE STRUCTURES | March 2011 | August 2013 | Allow | 29 | 2 | 1 | No | No |
| 13122034 | SEMICONDUCTOR DEVICE HAVING A CHIP BONDING USING A RESIN ADHESIVE FILM AND METHOD OF MANUFACTURING THE SAME. | March 2011 | January 2013 | Allow | 21 | 1 | 0 | No | No |
| 12983336 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME | January 2011 | April 2013 | Allow | 28 | 2 | 0 | No | No |
| 12752787 | MAGNETIC ELEMENT WITH VARYING AREAL EXTENTS | April 2010 | April 2013 | Allow | 37 | 2 | 1 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner TRAN, DZUNG.
With a 0.0% reversal rate, the PTAB affirms the examiner's rejections in the vast majority of cases. This reversal rate is in the bottom 25% across the USPTO, indicating that appeals face significant challenges here.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 0.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is in the bottom 25% across the USPTO, indicating that filing appeals is less effective here than in most other areas.
⚠ Appeals to PTAB face challenges. Ensure your case has strong merit before committing to full Board review.
⚠ Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.
Examiner TRAN, DZUNG works in Art Unit 2893 and has examined 86 patent applications in our dataset. With an allowance rate of 96.5%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 21 months.
Examiner TRAN, DZUNG's allowance rate of 96.5% places them in the 86% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.
On average, applications examined by TRAN, DZUNG receive 1.73 office actions before reaching final disposition. This places the examiner in the 34% percentile for office actions issued. This examiner issues fewer office actions than average, which may indicate efficient prosecution or a more lenient examination style.
The median time to disposition (half-life) for applications examined by TRAN, DZUNG is 21 months. This places the examiner in the 91% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.
Conducting an examiner interview provides a +4.3% benefit to allowance rate for applications examined by TRAN, DZUNG. This interview benefit is in the 29% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.
When applicants file an RCE with this examiner, 42.2% of applications are subsequently allowed. This success rate is in the 93% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.
This examiner enters after-final amendments leading to allowance in 13.9% of cases where such amendments are filed. This entry rate is in the 16% percentile among all examiners. Strategic Recommendation: This examiner rarely enters after-final amendments compared to other examiners. You should generally plan to file an RCE or appeal rather than relying on after-final amendment entry. Per MPEP § 714.12, primary examiners have discretion in entering after-final amendments, and this examiner exercises that discretion conservatively.
When applicants request a pre-appeal conference (PAC) with this examiner, 133.3% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 87% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences are highly effective with this examiner compared to others. Before filing a full appeal brief, strongly consider requesting a PAC. The PAC provides an opportunity for the examiner and supervisory personnel to reconsider the rejection before the case proceeds to the PTAB.
This examiner withdraws rejections or reopens prosecution in 83.3% of appeals filed. This is in the 77% percentile among all examiners. Of these withdrawals, 60.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner frequently reconsiders rejections during the appeal process compared to other examiners. Per MPEP § 1207.01, all appeals must go through a mandatory appeal conference. Filing a Notice of Appeal may prompt favorable reconsideration even before you file an Appeal Brief.
When applicants file petitions regarding this examiner's actions, 100.0% are granted (fully or in part). This grant rate is in the 92% percentile among all examiners. Strategic Note: Petitions are frequently granted regarding this examiner's actions compared to other examiners. Per MPEP § 1002.02(c), various examiner actions are petitionable to the Technology Center Director, including prematureness of final rejection, refusal to enter amendments, and requirement for information. If you believe an examiner action is improper, consider filing a petition.
Examiner's Amendments: This examiner makes examiner's amendments in 0.0% of allowed cases (in the 28% percentile). This examiner makes examiner's amendments less often than average. You may need to make most claim amendments yourself.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.0% of allowed cases (in the 35% percentile). This examiner issues Quayle actions less often than average. Allowances may come directly without a separate action for formal matters.
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.