USPTO Examiner GHEYAS SYED I - Art Unit 2893

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
18867459Semiconductor device AND manufacturing METHOD THEREOFNovember 2024April 2025Allow500NoNo
18638112CUT METAL GATE PROCESSESApril 2024October 2025Allow1820NoNo
18634426CHAMFER-LESS VIA INTEGRATION SCHEMEApril 2024December 2025Allow2020YesNo
18591665METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUMFebruary 2024January 2026Abandon2220NoNo
18529579IMAGING ELEMENT AND ELECTRONIC APPARATUSDecember 2023December 2024Allow1210NoNo
18515148SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYERNovember 2023June 2025Allow1921YesNo
18373598LATERAL BIPOLAR TRANSISTORSeptember 2023August 2024Allow1110YesNo
18471282SEMICONDUCTOR DEVICESeptember 2023October 2024Allow1310YesNo
18370001TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASESeptember 2023August 2024Allow1110NoNo
18458235UTILIZATION OF SACRIFICIAL MATERIAL FOR CURRENT ELECTRODE FORMATIONAugust 2023January 2026Allow2900NoNo
18451096SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICEAugust 2023February 2026Allow3001NoNo
18449895SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAMEAugust 2023February 2026Allow3001YesNo
18232831ELECTRICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAMEAugust 2023December 2025Allow2810YesNo
18276982NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFECT TRANSISTOR AND ELECTRICAL EQUIPMENTAugust 2023October 2025Allow2600NoNo
18446989SILICON CARBIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICEAugust 2023March 2026Allow3110NoNo
18357997FET WITH MULTI-VALUE SWITCHING FUNCTIONJuly 2023January 2026Allow3010NoNo
18357164SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICEJuly 2023January 2026Allow3001NoNo
18219877HORIZONTAL CURRENT BIPOLAR TRANSISTOR WITH SILICON-GERMANIUM BASEJuly 2023April 2024Allow900YesNo
18260519SCHOTTKY BARRIER DIODEJuly 2023February 2026Allow3210YesNo
18337493LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERSJune 2023May 2024Allow1100NoNo
18337032SEMICONDUCTOR APPARATUS, AND MANUFACTURING METHOD THEREOFJune 2023October 2025Allow2800NoNo
18207654SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAMEJune 2023April 2024Allow1010NoNo
18327893HETEROJUNCTION BIPOLAR TRANSISTORJune 2023June 2025Abandon2530YesNo
18204095HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICESMay 2023December 2025Allow3010YesNo
18255280Heterojunction Bipolar TransistorMay 2023February 2026Abandon3310NoNo
18197945LATERAL BIPOLAR TRANSISTORMay 2023November 2025Allow3010NoNo
18197157THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR DEVICEMay 2023June 2024Allow1310YesNo
18196995INTERCONNECT STRUCTUREMay 2023February 2026Allow3350YesNo
18307456SEMICONDUCTOR DEVICEApril 2023September 2025Allow2800NoNo
18138956INSULATED GATE BIPOLAR TRANSISTORApril 2023July 2025Allow2700NoNo
18304378SEMICONDUCTOR DEVICE AND MANUFACTURING METHODApril 2023September 2025Allow2900NoNo
18301439QUANTUM DOT DEVICES WITH FINSApril 2023October 2024Allow1830YesNo
18297144Silicon Carbide Wafers with Relaxed Positive Bow and Related MethodsApril 2023April 2024Allow1210YesNo
18193888SILICON CARBIDE SEMICONDUCTOR DEVICEMarch 2023August 2025Allow2800NoNo
18189621SEMICONDUCTOR DEVICEMarch 2023November 2025Allow3101NoNo
18177751SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICEMarch 2023August 2025Allow2900NoNo
18177210METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICEMarch 2023December 2025Allow3311NoNo
18041255Hetero-Junction Bipolar Transistor and Method of Manufacturing the SameFebruary 2023November 2025Abandon3410NoNo
18041089BIDIRECTIONAL THYRISTORFebruary 2023November 2025Allow3310NoNo
18163824EDGE TERMINATION STRUCTURES FOR SEMICONDUCTOR DEVICESFebruary 2023April 2025Allow2730NoNo
18099389HEATER ELEMENTSJanuary 2023March 2026Allow3820YesNo
18152710TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATEJanuary 2023January 2026Allow3720NoNo
18095217POWER SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOFJanuary 2023May 2025Allow2800NoNo
18091559MANUFACTURING METHOD OF TRENCH-TYPE POWER DEVICEDecember 2022October 2025Allow3410NoNo
18091547TRENCH-TYPE POWER DEVICE AND MANUFACTURING METHOD THEREOFDecember 2022December 2025Allow3520NoNo
18090673METHOD OF MANUFACTURING A METAL SILICIDE LAYER ABOVE A SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE COMPRISING A METAL SILICIDE LAYERDecember 2022August 2025Allow3201YesNo
18069824GALLIUM NITRIDE SUPERJUNCTION TRANSISTORDecember 2022January 2026Allow3711YesNo
18084445SEMICONDUCTOR DEVICEDecember 2022June 2025Allow3001YesNo
18067322SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRYSTALLINE REGION AND METHOD THEREFORDecember 2022November 2025Allow3520NoNo
18066902SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAMEDecember 2022November 2025Allow3511NoNo
18080938SEMICONDUCTOR DEVICE HAVING A TERMINATION REGION WITH DEEP TRENCH ISOLATIONDecember 2022June 2025Allow3000NoNo
18066110SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGIONDecember 2022July 2025Allow3110NoNo
18070765SUPERCONDUCTING MATERIALS, DEVICES, AND PROCESSESNovember 2022June 2024Allow1810NoNo
17999091SEMICONDUCTOR UNIT, SEMICONDUCTOR MODULE, AND ELECTRONIC APPARATUSNovember 2022November 2025Allow3610YesNo
18054973HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAMENovember 2022December 2025Abandon3710NoNo
17922428SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICEOctober 2022July 2025Allow3310YesNo
17976306SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOFOctober 2022February 2024Allow1510YesNo
18050412DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAMEOctober 2022February 2024Allow1620YesNo
17960146N-TYPE METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD FOR FABRICATING THE SAMEOctober 2022November 2025Allow3721NoNo
17957687METHOD FOR MANUFACTURING A QUANTUM ELECTRONIC CIRCUITSeptember 2022April 2025Allow3000NoNo
17936012THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORING AREA AND METHODS OF MAKING THE SAMESeptember 2022July 2025Allow3401NoNo
17911700SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAMESeptember 2022October 2025Abandon3710NoNo
17930780MITIGATING DETRIMENTAL MOBILE ION CONTAMINATION EFFECTS IN INTEGRATED CIRCUITSSeptember 2022April 2025Allow3100NoNo
17818600Cut Metal Gate ProcessesAugust 2022January 2024Allow1710YesNo
17881240NOISE REDUCED CIRCUITS FOR TRAPPED-ION QUANTUM COMPUTERSAugust 2022September 2025Allow3710YesNo
17877524DISPLAY DEVICE AND METHOD OF FABRICATING THE SAMEJuly 2022March 2025Allow3200NoNo
17872790LATERAL BIPOLAR TRANSISTORSJuly 2022May 2024Allow2210YesNo
17813504SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRICATION THEREFORJuly 2022July 2024Allow2410NoNo
17857993SEMICONDUCTOR STRUCTURE AND METHOD OF FORMINGJuly 2022September 2025Allow3840YesNo
17809856BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING CONCENTRATION GRADINGJune 2022March 2025Allow3331YesNo
17809855BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING CONCENTRATION DISCONTINUITYJune 2022June 2024Allow2310NoNo
17847778HETEROJUNCTION BIPOLAR TRANSISTOR AND POWER AMPLIFIERJune 2022February 2024Allow1900NoNo
17838894CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAMEJune 2022June 2025Allow3630YesNo
17784437SUBSTRATE, METHOD FOR FORMING THE SAME, DISPLAY DEVICE AND FOR FORMING THE SAMEJune 2022July 2025Allow3810NoNo
17784398DISPLAY SUBSTRATES, DISPLAY PANELS AND DISPLAY SUBSTRATE MANUFACTURING METHODSJune 2022February 2025Allow3310NoNo
17835851MULTI-CHIP MODULES FORMED USING WAFER-LEVEL PROCESSING OF A RECONSTITUTED WAFERJune 2022June 2025Allow3640YesNo
17834145DISPLAY MODULE AND DISPLAY DEVICEJune 2022August 2025Allow3810NoNo
17832984CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICEJune 2022March 2024Allow2110YesNo
17829541IMAGE SENSING DEVICEJune 2022June 2025Allow3710NoNo
17829776SEMICONDUCTOR STRUCTURE FOR DIE CRACK DETECTIONJune 2022February 2025Allow3311NoNo
17826519HEAT DISSIPATING FEATURES FOR LASER DRILLING PROCESSMay 2022February 2025Allow3200NoNo
17827525INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAMEMay 2022July 2025Allow3810NoNo
17826309ELECTRONIC COMPONENT PACKAGE BODY, ELECTRONIC COMPONENT PACKAGE ASSEMBLY, AND ELECTRONIC DEVICEMay 2022January 2026Abandon4320NoNo
17750996SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAMEMay 2022June 2025Allow3711NoNo
17777411LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAMEMay 2022August 2025Allow3921NoNo
17746409SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SEMICONDUCTOR DEVICE STRUCTUREMay 2022February 2025Allow3311NoNo
17742819SEMICONDUCTOR PACKAGEMay 2022April 2025Allow3520YesNo
17743364OPTOELECTRONIC DEVICE MANUFACTURING METHODMay 2022August 2025Allow3920NoNo
17740643BAND EDGE EMISSION ENHANCED ORGANIC LIGHT EMITTING DIODE UTILIZING CHIRAL LIQUID CRYSTALLINE EMITTERMay 2022September 2024Allow2820NoNo
17739260HOLE-TRANSPORT LAYER MATERIAL, ELECTRON-BLOCKING LAYER MATERIAL, ELECTRON-TRANSPORT LAYER MATERIAL, HOLE-BLOCKING LAYER MATERIAL, LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, ELECTRONIC DEVICE, AND LIGHTING DEVICEMay 2022January 2025Allow3310YesNo
17737003BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAMEMay 2022April 2024Allow2412YesNo
17774104Optoelectronic Semiconductor ComponentMay 2022June 2025Allow3720YesNo
17772280MEMORY DEVICE AND ELECTRONIC DEVICEApril 2022August 2024Allow2800NoNo
17707170REPEATED EMITTER DESIGN FOR ACHIEVING SCALABLE LATERAL PNP BEHAVIORMarch 2022July 2024Allow2820NoNo
17688224SEMICONDUCTOR DEVICEMarch 2022April 2025Allow3720YesNo
17653329QUASI GLOBAL CATHODE CONTACT METHOD FOR ADVANCED PATTERNINGMarch 2022January 2025Allow3510NoNo
17638210OPTOELECTRONIC DEVICE WITH LIGHT EMITTER AND DETECTOR AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICEFebruary 2022July 2025Allow4020YesNo
17678875SEMICONDUCTOR STRUCTURE WITH DIELECTRIC FIN FEATUREFebruary 2022November 2024Allow3201YesNo
17631305SEMICONDUCTOR ELEMENT, METHOD OF READING OUT A QUANTUM DOT DEVICE AND SYSTEMJanuary 2022January 2025Allow3610NoNo
17575816Super Junction Device and Method for Making the SameJanuary 2022September 2024Allow3210NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner GHEYAS, SYED I.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
1
Examiner Affirmed
0
(0.0%)
Examiner Reversed
1
(100.0%)
Reversal Percentile
96.0%
Higher than average

What This Means

With a 100.0% reversal rate, the PTAB has reversed the examiner's rejections more often than affirming them. This reversal rate is in the top 25% across the USPTO, indicating that appeals are more successful here than in most other areas.

Strategic Value of Filing an Appeal

Total Appeal Filings
4
Allowed After Appeal Filing
2
(50.0%)
Not Allowed After Appeal Filing
2
(50.0%)
Filing Benefit Percentile
81.4%
Higher than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 50.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is in the top 25% across the USPTO, indicating that filing appeals is particularly effective here. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Examiner GHEYAS, SYED I - Prosecution Strategy Guide

Executive Summary

Examiner GHEYAS, SYED I works in Art Unit 2893 and has examined 75 patent applications in our dataset. With an allowance rate of 96.0%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 32 months.

Allowance Patterns

Examiner GHEYAS, SYED I's allowance rate of 96.0% places them in the 86% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by GHEYAS, SYED I receive 2.12 office actions before reaching final disposition. This places the examiner in the 57% percentile for office actions issued. This examiner issues a slightly above-average number of office actions.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by GHEYAS, SYED I is 32 months. This places the examiner in the 52% percentile for prosecution speed. Prosecution timelines are slightly faster than average with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a -3.7% benefit to allowance rate for applications examined by GHEYAS, SYED I. This interview benefit is in the 7% percentile among all examiners. Note: Interviews show limited statistical benefit with this examiner compared to others, though they may still be valuable for clarifying issues.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 29.8% of applications are subsequently allowed. This success rate is in the 57% percentile among all examiners. Strategic Insight: RCEs show above-average effectiveness with this examiner. Consider whether your amendments or new arguments are strong enough to warrant an RCE versus filing a continuation.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 24.4% of cases where such amendments are filed. This entry rate is in the 33% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 200.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 97% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences are highly effective with this examiner compared to others. Before filing a full appeal brief, strongly consider requesting a PAC. The PAC provides an opportunity for the examiner and supervisory personnel to reconsider the rejection before the case proceeds to the PTAB.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 75.0% of appeals filed. This is in the 65% percentile among all examiners. Of these withdrawals, 66.7% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.

Petition Practice

When applicants file petitions regarding this examiner's actions, 0.0% are granted (fully or in part). This grant rate is in the 5% percentile among all examiners. Strategic Note: Petitions are rarely granted regarding this examiner's actions compared to other examiners. Ensure you have a strong procedural basis before filing a petition, as the Technology Center Director typically upholds this examiner's decisions.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 0.0% of allowed cases (in the 28% percentile). This examiner makes examiner's amendments less often than average. You may need to make most claim amendments yourself.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.0% of allowed cases (in the 33% percentile). This examiner issues Quayle actions less often than average. Allowances may come directly without a separate action for formal matters.

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Request pre-appeal conferences: PACs are highly effective with this examiner. Before filing a full appeal brief, request a PAC to potentially resolve issues without full PTAB review.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.