USPTO Examiner PHAM HOAI V - Art Unit 2892

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
18743155METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING AN AIR GAP BETWEEN A CONTACT PAD AND A SIDEWALL OF CONTACT HOLEJune 2024May 2025Allow1100NoNo
18741771DISPLAY DEVICE HAVING A CONDUCTIVE METAL LAYER DISPOSED ON A SURFACE OF AN ANTIREFLECTION LAYERJune 2024April 2025Allow1000NoNo
18735864INTEGRATED ASSEMBLIES WHICH INCLUDE STACKED MEMORY DECKS, AND METHODS OF FORMING INTEGRATED ASSEMBLIESJune 2024May 2025Allow1100NoNo
18677617DISPLAY SUBSTRATE WITH PIXEL OPENING AREAS, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICEMay 2024April 2025Allow1100NoNo
18653289Integrated Assemblies having Transistors Configured for High-Voltage Applications, and Methods of Forming Integrated AssembliesMay 2024June 2025Allow1310NoNo
18583157METHOD OF FORMING LIGHT-EMITTING DEVICE INCLUDING A LIGHT-TRANSMITTING INTERCONNECT LOCATED OVER A SUBSTRATEFebruary 2024October 2024Allow800NoNo
18581826INTERCONNECTION STRUCTURE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAMEFebruary 2024February 2025Allow1220NoNo
18444790MEMORY STRUCTURE HAVING POLYGONAL SHAPED BIT LINE CONTACT DISPOSED ON A SOURCE/DRAIN REGIONFebruary 2024November 2024Allow901NoNo
18440347VERTICAL DEVICE HAVING A PROTRUSION SOURCEFebruary 2024March 2025Allow1310NoNo
18423648DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHODJanuary 2024January 2025Allow1201NoNo
18418795VERTICAL FIELD-EFFECT TRANSISTOR DEVICES HAVING GATE LINERJanuary 2024September 2024Allow800NoNo
18416598DISPLAY DEVICE INCLUDING A PLURALITY OF LAYERS EACH INCLUDING A LIGHT EMITTING LAYERJanuary 2024January 2025Allow1210NoNo
18415702MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE HAVING A PLURALITY OF FINSJanuary 2024September 2024Allow800NoNo
18538358METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING A SINGLE CRYSTAL STORAGE CONTACTDecember 2023September 2024Allow900NoNo
18528707MAGNETORESISTIVE RANDOM ACCESS MEMORY HAVING A RING OF MAGNETIC TUNNELING JUNCTION REGION SURROUNDING AN ARRAY REGIONDecember 2023December 2024Allow1210NoNo
18524794METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICENovember 2023November 2024Allow1110NoNo
18525187METHOD OF FORMING AN INTEGRATED CIRCUIT DEVICES HAVING BURIED WORD LINESNovember 2023September 2024Allow1000NoNo
18521584FINFET STRUCTURE WITH A COMPOSITE STRESS LAYER AND REDUCED FIN BUCKLINGNovember 2023January 2025Allow1410NoNo
18515181LIGHT EMITTING DISPLAY PANEL INCLUDING PLURALITY OF ORGANIC AND INORGANIC LAYERS AND METHOD OF MANUFACTURING THE SAMENovember 2023January 2025Allow1420NoNo
18504567ORGANIC LIGHT-EMITTING COMPONENT HAVING A LIGHT-EMITTING LAYER AS PART OF A CHARGE GENERATION LAYERNovember 2023January 2025Allow1410NoNo
18498718METHOD OF DIRECT-BONDED OPTOELECTRONIC DEVICESOctober 2023September 2024Allow1100YesNo
18383086SEMICONDUCTOR DEVICE HAVING PLURALITY OF INSULATORSOctober 2023July 2024Allow900NoNo
18370927LIGHT-EMITTING DEVICE WITH CIRCULAR POLARIZING PLATE OVER BONDING LAYERSeptember 2023October 2024Allow1310NoNo
18470446SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE HAVING ENLARGEMANT PORTION SURROUNDING WORD LINESeptember 2023December 2024Allow1510NoNo
18470410SEMICONDUCTOR DEVICE WITH POROUS SPACER MADE OF LOW-K MATERIAL AND MANUFACTURING METHOD THEREOFSeptember 2023March 2025Allow1820NoNo
18362770PHASE CHANGE MEMORY DEVICE HAVING TAPERED PORTION OF THE BOTTOM MEMORY LAYERJuly 2023June 2024Allow1100NoNo
18227361SEMICONDUCTOR DEVICE COMPRISING OXIDE SEMICONDUCTOR LAYER CONTAINING A C-AXIS ALIGNED CRYSTALJuly 2023September 2024Allow1410NoNo
18224691SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS HAVING A DIVIDED PIXEL SEPARATION WALLJuly 2023May 2024Allow1000NoNo
18354844A DUMMY FIN BETWEEN FIRST AND SECOND SEMICONDUCTOR FINSJuly 2023July 2024Allow1200NoNo
18350838Doping for Semiconductor Device with Conductive FeatureJuly 2023February 2024Allow700NoNo
18218762Integrated Assemblies Which Include Stacked Memory Decks, and Methods of Forming Integrated AssembliesJuly 2023February 2024Allow700NoNo
18338726METHODS OF FORMING SEMICONDUCTOR DEVICE PACKAGES HAVING ALIGNMENT MARKS ON A CARRIER SUBSTRATEJune 2023February 2024Allow800NoNo
18207689SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE HAVING FIRST PORTION AND SECOND PORTION AND METHOD FOR MANUFACTURING THE SAMEJune 2023May 2024Allow1110YesNo
18206512DIRECT-BONDED LED ARRAYS AND DRIVERSJune 2023July 2024Allow1410YesNo
18323458ARRAY BOUNDARY STRUCTURE TO REDUCE DISHINGMay 2023June 2024Allow1300NoNo
18301572METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING MULTI-WORK FUNCTION GATE ELECTRODEApril 2023January 2024Allow900NoNo
18193965RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCHMarch 2023May 2024Allow1401NoNo
18193544SEMICONDUCTOR DEVICE STRUCTURE WITH MAGNETIC ELEMENTMarch 2023April 2024Allow1310NoNo
18186935METHOD OF MANUFACTURING MEMORY STRUCTURE HAVING A HEXAGONAL SHAPED BIT LINE CONTACT DISPOSED ON A SOURCE/DRAIN REGIONMarch 2023December 2023Allow900NoNo
18174902METHOD OF FORMING AN INTEGRATED CIRCUIT DEVICE HAVING A CONTACT CAPPING LAYERFebruary 2023December 2023Allow900NoNo
18110999Light-Emitting Element Having An Organic Compound And A Transition MetalFebruary 2023December 2023Allow1000NoNo
18108666SEMICONDUCTOR MEMORY DEVICE HAVING BIT LINES AND ISOLATION FINS DISPOSED ON THE SUBSTRATEFebruary 2023August 2024Allow1820NoNo
18108003MAGNETORESISTIVE RANDOM ACCESS MEMORY HAVING A RING OF MAGNETIC TUNNELING JUNCTION REGION SURROUNDING AN ARRAY REGIONFebruary 2023September 2023Allow700NoNo
18107853DISPLAY PANELFebruary 2023April 2024Abandon1410NoNo
18161836LIFT-OFF PROCESS FOR MANUFACTURING AN ORGANIC LIGHT-EMITTING DISPLAY APPARATUSJanuary 2023October 2023Allow900NoNo
18095973STACKED TRIGATE TRANSISTORS WITH DIELECTRIC ISOLATION AND PROCESS FOR FORMING SUCHJanuary 2023October 2023Allow900NoNo
18093561SEMICONDUCTOR MEMORY DEVICE HAVING AN OHMIC CONTACT ON THE IMPURITY REGIONSJanuary 2023June 2025Allow2900NoNo
18149178METHOD OF FORMING BIT LINE CONTACT STRUCTURE USING SERIES OF PICKLING PROCESSES TO REMOVE NATIVE OXIDE ON SURFACE OF THE ACTIVE AREASJanuary 2023March 2025Allow2601NoNo
18146962STRAINED-CHANNEL FIN FETSDecember 2022September 2024Allow2111NoNo
18087579ELECTRONIC COMPONENT COMPRISING A 3D CAPACITIVE STRUCTUREDecember 2022May 2025Allow2900NoNo
18083118LIGHT-EMITTING DEVICE INCLUDING A LIGHT-TRANSMITTING INTERCONNECT LOCATED OVER A SUBSTRATEDecember 2022December 2023Allow1210NoNo
18080740SEMICONDUCTOR PACKAGES HAVING THERMAL CONDUCTIVE PATTERNDecember 2022May 2024Allow1710NoNo
18064341Interconnect Structure Having a Carbon-Containing Barrier LayerDecember 2022October 2023Allow1010NoNo
17993902SEMICONDUCTOR MEMORY DEVICE HAVING A BIT LINE CONTACT DISPOSED IN THE SUBSTRATENovember 2022June 2025Allow3101NoNo
17989791A PACKAGE-ON-PACKAGE TYPE SEMICONDUCTOR PACKAGE AND METHODNovember 2022November 2024Allow2421YesNo
17983402SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS DISPOSED BETWEEN UPPER PORTIONS OF THE ISOLATION STRUCTURES AND THE ACTIVE REGIONSNovember 2022November 2024Allow2501NoNo
17981719SEMICONDUCTOR MEMORY DEVICE HAVING SHIELD LAYER BETWEEN PERIPHERAL CIRCUIT AND CELL ARRAY STRUCTURESNovember 2022May 2025Allow3001NoNo
17980897DISPLAY DEVICE INCLUDING A PLURALITY OF LAYERS EACH INCLUDING A LIGHT EMITTING LAYERNovember 2022October 2023Allow1110NoNo
17980345Multi-Transistor Stack Architecture In A Single Vertical StackNovember 2022March 2024Allow1601NoNo
17973219INTEGRATED POWER SWITCHING DEVICE HEAT SINKOctober 2022April 2025Allow3000NoNo
17969663PHOTOSENSOR HAVING A SCATTERING STRUCTURE COMPRISES CIRCULAR RING AND PERIPHERAL PATTERNSOctober 2022April 2025Allow2900NoNo
17961806A TOUCH PANEL HAVING A PHOTOELECTRIC CONVERSION ELEMENT BETWEEN THE FIRST AND SECOND FLEXIBLE SUBSTRATESOctober 2022May 2023Allow700NoNo
17915991METHOD OF FORMING A BIT LINE STRUCTURESeptember 2022June 2025Allow3311NoNo
17954676DISPLAY APPARATUS HAVING A LIGHT EMITTING LAYER DISPOSED IN A PORTION OF THE OPENING PERIPHERAL AREASeptember 2022June 2023Allow800NoNo
17954221SEMICONDUCTOR STRUCTURE HAVING ISOLATION STRUCTURE EMBEDDED IN THE GROOVE OF THE BIT LINESeptember 2022February 2025Allow2801NoNo
17953054SEMICONDUCTOR DEVICE HAVING AN AIR GAP SURROUNDING A PORTION OF A CONDUCTIVE CONTACT LAYERSeptember 2022May 2025Allow3200NoNo
17952265SEMICONDUCTOR STRUCTURE HAVING TWO WORD LINES COVERING PART OF OPPOSITE SIDE SURFACES OF THE PLURALITY OF SEMICONDUCTOR CHANNELSSeptember 2022March 2025Allow3001NoNo
17951077SEMICONDUCTOR DEVICE HAVING PLURALITY OF TRENCHES WITH DIFFERENT DEPTHSeptember 2022February 2025Allow2901NoNo
17946063SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING A DEVICE HAVING SOURCE REGION WITH DIFFERENT DOPING TYPES IN HORIZONTAL DIRECTIONSeptember 2022March 2025Allow3000NoNo
17932276SEMICONDUCTOR STRUCTURE HAVING A PLURALITY OF BIT LINES SPACED APART FROM EACH OTHER IN A FIRST DIRECTION AND EXTEND IN A SECOND DIRECTIONSeptember 2022April 2025Allow3101NoNo
17939414SEMICONDUCTOR DEVICE HAVING METAL NITRIDE GATE DOPED WITH A LOW WORK FUNCTIONSeptember 2022July 2025Allow3401NoNo
17901853SEMICONDUCTOR STRUCTURE FOR DRAM HAVING A PILLAR LOWER ELECTRODE AND FORMATION METHOD THEREOFSeptember 2022May 2025Allow3211NoNo
17897556SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR DIE EMBEDDED BETWEEN AN EXTENDED SUBSTRATE AND A BOTTOM SUBSTRATEAugust 2022June 2024Allow2111NoNo
17892275SEMICONDUCTOR DEVICES HAVING A GRAPHENE PATTERN BETWEEN THE FIRST CONDUCTIVE PATTERN AND THE BIT LINE CAPPINGAugust 2022January 2025Allow2900NoNo
17886546DISPLAY PANEL HAVING LIGHT SHIELDING MEMBER WITH DIFFERENT THICKNESSAugust 2022March 2025Allow3100NoNo
17879779METHOD FOR FORMING A FIRST AND A SECOND TRANSISTORS ARRAY HAVING PLURALITY OF FIRST AND SEMICONDUCTOR PILLARSAugust 2022February 2025Allow3101NoNo
17876330FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLINGJuly 2022September 2023Allow1410NoNo
17815623SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD USING DIFFERENT ION IMPLANTATION ENERGYJuly 2022September 2024Allow2500NoNo
17795121Semiconductor Structure Having Silicide Layer Disposed On Sidewalls Of The BitlineJuly 2022June 2025Allow3501NoNo
17872452Doping for Semiconductor Device with Conductive FeatureJuly 2022April 2023Allow900NoNo
17868683Method of Forming Integrated Assemblies having Transistors Configured for High-Voltage ApplicationsJuly 2022February 2024Allow1930NoNo
17867432METHOD FOR FORMING BURIED BIT LINES IN THE BIT LINE TRENCHSJuly 2022January 2025Allow3001NoNo
17866066METHOD OF FORMING AN ARRAY OF MULTI-STACK NANOSHEET STRUCTURES HAVING A DAM STRUCTURE ISOLATING MULTI-STACK TRANSISTORSJuly 2022April 2023Allow900NoNo
17863468SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS HAVING A SEPARATION WALL BETWEEN THE FIRST PHOTODIODE AND THE SECOND PHOTODIODEJuly 2022April 2023Allow900NoNo
17860721SEMICONDUCTOR DEVICE HAVING TRENCH POSITIONED IN A SUBSTRATE AND ALIGNED WITH A SIDE WALL OF A BIT LINE CONTACT PLUGJuly 2022September 2023Allow1410NoNo
17858986METHOD FORMING A SEMICONDUCTOR DEVICE STRUCTURE HAVING AN UNDERGROUND INTERCONNECTION EMBEDDED INTO A SILICON SUBSTRATEJuly 2022September 2024Allow2611NoNo
17858055METHOD OF FABRICATING SEMICONDUCTOR MEMORY HAVING A SECOND ACTIVE REGION DISPOSED AT AN OUTER SIDE OF A FIRST ACTIVE REGIONJuly 2022March 2023Allow900NoNo
17851865Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsJune 2022December 2024Allow3000NoNo
17807837METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE USING A FIRST MASK COMPRISES A GFROOVEJune 2022May 2024Allow2300NoNo
17844573SEMICONDUCTOR APPARATUS HAVING A SILICIDE BETWEEN TWO DEVICESJune 2022August 2023Allow1410NoNo
17784857ELECTRONIC COMPONENT WITH DIELECTRIC FILM AND MANUFACTURING METHODJune 2022April 2025Allow3411NoNo
17837718METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING TAPERED BIT LINEJune 2022November 2023Allow1700NoNo
17837052SEMICONDUCTOR STRUCTURE HAVING TAPERED BIT LINEJune 2022November 2023Allow1700NoNo
17834982FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDEJune 2022December 2024Allow3001NoNo
17834869METHOD FOR MANUFACTURING ELECTRONIC DEVICE HAVING A SEED LAYER ON A SUBSTRATEJune 2022April 2023Allow1000NoNo
17805738METHOD FOR MANUFACTURING SEMICONDUCTOR BIT LINE CONTACT REGION WITH DIFFERENT DOPED IMPURITY CONCENTRATIONSJune 2022August 2024Allow2601NoNo
178050363D Stacking Architecture Through TSV and Methods Forming SameJune 2022June 2025Allow3711NoNo
17824905MEMORY CELL STRUCTURE, MEMORY ARRAY STRUCTURE, SEMICONDUCTOR STRUCTURE HAVING A CAPACITOR STRUCTURE SURROUNDED ON THE OUTER SIDE OF THE WORD LINEMay 2022December 2024Allow3101NoNo
17752869METHOD FOR MAKING SEMICONDUCTOR DEVICE USING A STRESS MEMORIZATION TECHNIQUEMay 2022October 2024Allow2900NoNo
17664853DISPLAY DEVICE INCLUDING AN EMISSION DEFINING LAYER AND METHOD FOR FABRICATION THEREOFMay 2022February 2025Allow3310NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner PHAM, HOAI V.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
6
Examiner Affirmed
4
(66.7%)
Examiner Reversed
2
(33.3%)
Reversal Percentile
53.0%
Higher than average

What This Means

With a 33.3% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.

Strategic Value of Filing an Appeal

Total Appeal Filings
16
Allowed After Appeal Filing
6
(37.5%)
Not Allowed After Appeal Filing
10
(62.5%)
Filing Benefit Percentile
59.3%
Higher than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 37.5% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is above the USPTO average, suggesting that filing an appeal can be an effective strategy for prompting reconsideration.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Examiner PHAM, HOAI V - Prosecution Strategy Guide

Executive Summary

Examiner PHAM, HOAI V works in Art Unit 2892 and has examined 1,487 patent applications in our dataset. With an allowance rate of 94.4%, this examiner allows applications at a higher rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 16 months.

Allowance Patterns

Examiner PHAM, HOAI V's allowance rate of 94.4% places them in the 84% percentile among all USPTO examiners. This examiner is more likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by PHAM, HOAI V receive 0.66 office actions before reaching final disposition. This places the examiner in the 5% percentile for office actions issued. This examiner issues significantly fewer office actions than most examiners.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by PHAM, HOAI V is 16 months. This places the examiner in the 98% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a -7.6% benefit to allowance rate for applications examined by PHAM, HOAI V. This interview benefit is in the 2% percentile among all examiners. Note: Interviews show limited statistical benefit with this examiner compared to others, though they may still be valuable for clarifying issues.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 38.8% of applications are subsequently allowed. This success rate is in the 86% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 37.7% of cases where such amendments are filed. This entry rate is in the 50% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 100.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 73% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences show above-average effectiveness with this examiner. If you have strong arguments, a PAC request may result in favorable reconsideration.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 53.8% of appeals filed. This is in the 20% percentile among all examiners. Of these withdrawals, 42.9% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner rarely withdraws rejections during the appeal process compared to other examiners. If you file an appeal, be prepared to fully prosecute it to a PTAB decision. Per MPEP § 1207, the examiner will prepare an Examiner's Answer maintaining the rejections.

Petition Practice

When applicants file petitions regarding this examiner's actions, 56.3% are granted (fully or in part). This grant rate is in the 71% percentile among all examiners. Strategic Note: Petitions show above-average success regarding this examiner's actions. Petitionable matters include restriction requirements (MPEP § 1002.02(c)(2)) and various procedural issues.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 8.3% of allowed cases (in the 94% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 1.7% of allowed cases (in the 63% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • RCEs are effective: This examiner has a high allowance rate after RCE compared to others. If you receive a final rejection and have substantive amendments or arguments, an RCE is likely to be successful.
  • Examiner cooperation: This examiner frequently makes examiner's amendments to place applications in condition for allowance. If you are close to allowance, the examiner may help finalize the claims.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.