Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 19257402 | GAN-BASED DEVICE BASED ON PATTERNED OHMIC CONTACT AND MANUFACTURING METHOD THEREOF | July 2025 | August 2025 | Allow | 2 | 0 | 0 | No | No |
| 19241538 | SEMICONDUCTOR DEVICE WITH VERTICALLY STACKED GAN COMPLEMENTARY FETS | June 2025 | August 2025 | Allow | 2 | 0 | 0 | No | No |
| 19027364 | HIGH MOBILITY TRANSISTOR WITH ALGAN BUFFER LAYER | January 2025 | April 2025 | Allow | 3 | 0 | 0 | Yes | No |
| 19004515 | WIDE BANDGAP SEMICONDUCTOR STRUCTURE FOR IRRADIATION CHARACTERISTIC TEST AND PREPARATION METHOD THEREOF | December 2024 | March 2025 | Allow | 3 | 0 | 0 | No | No |
| 18916467 | P-GAN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH MOS2-BASED 2D BARRIER | October 2024 | December 2024 | Allow | 2 | 0 | 0 | No | No |
| 18895947 | SEMICONDUCTOR DEVICE | September 2024 | November 2024 | Allow | 2 | 0 | 0 | No | No |
| 18846163 | SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION | September 2024 | March 2025 | Allow | 6 | 0 | 0 | No | No |
| 18786937 | NVM-ALEFT-ISD-LTSEE | July 2024 | June 2025 | Allow | 10 | 1 | 1 | No | No |
| 18754058 | HETEROGENEOUS INTEGRATION OF RADIO FREQUENCY TRANSISTOR CHIPLETS HAVING INTERCONNECTIONS TO HOST WAFER CIRCUITS FOR OPTIMIZING OPERATING CONDITIONS | June 2024 | November 2024 | Allow | 5 | 1 | 0 | Yes | No |
| 18743061 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | June 2024 | March 2025 | Allow | 9 | 0 | 0 | No | No |
| 18732645 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | June 2024 | March 2025 | Allow | 9 | 0 | 0 | Yes | No |
| 18647027 | GAN HEMT TRANSISTOR WITH IMPACT ENERGY RELEASE CAPABILITY FOR USE IN AEROSPACE IRRADIATION ENVIRONMENT AND PREPARATION METHOD THEREOF | April 2024 | January 2025 | Allow | 9 | 1 | 0 | No | No |
| 18638735 | MONOLITHICALLY INTEGRATED GAN-BASED HALF-BRIDGE CIRCUIT AND HALF-BRIDGE CIRCUIT | April 2024 | June 2024 | Allow | 2 | 0 | 0 | No | No |
| 18608890 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | March 2024 | December 2024 | Allow | 9 | 1 | 0 | No | No |
| 18413078 | SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE | January 2024 | October 2024 | Allow | 9 | 0 | 0 | No | No |
| 18578607 | SEMICONDUCTOR DEVICE | January 2024 | July 2024 | Allow | 6 | 0 | 0 | No | No |
| 18410823 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME | January 2024 | September 2024 | Allow | 9 | 0 | 0 | No | No |
| 18391678 | NITRIDE SEMICONDUCTOR DEVICE | December 2023 | September 2024 | Allow | 9 | 0 | 0 | No | No |
| 18568277 | GAN POWER SEMICONDUCTOR DEVICE INTEGRATED WITH SELF-FEEDBACK GATE CONTROL STRUCTURE | December 2023 | May 2024 | Allow | 5 | 0 | 0 | No | No |
| 18484469 | MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE | October 2023 | January 2025 | Allow | 16 | 1 | 1 | No | No |
| 18477372 | HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUFACTURING PROCESS | September 2023 | November 2024 | Allow | 14 | 1 | 0 | No | No |
| 18206620 | HEMT AND METHOD OF FABRICATING THE SAME | June 2023 | May 2024 | Allow | 12 | 0 | 0 | Yes | No |
| 18321643 | SEMICONDUCTOR LAYER STRUCTURE | May 2023 | July 2024 | Allow | 14 | 0 | 0 | Yes | No |
| 18318423 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME | May 2023 | September 2024 | Allow | 16 | 0 | 0 | No | No |
| 18311249 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | May 2023 | October 2025 | Allow | 30 | 0 | 1 | No | No |
| 18134582 | SEMICONDUCTOR DEVICE | April 2023 | September 2024 | Allow | 17 | 1 | 0 | No | No |
| 18248990 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME | April 2023 | July 2025 | Allow | 27 | 0 | 0 | No | No |
| 18105888 | Layout pattern of semiconductor cell and forming method thereof | February 2023 | August 2025 | Allow | 30 | 0 | 0 | No | No |
| 18099293 | BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY | January 2023 | December 2024 | Allow | 23 | 1 | 0 | No | No |
| 18097005 | SEMICONDUCTOR DEVICE FOR RF INTEGRATED CIRCUIT | January 2023 | August 2024 | Allow | 19 | 0 | 0 | No | No |
| 18093434 | Selective Laser Annealing Method | January 2023 | December 2024 | Allow | 23 | 1 | 1 | No | No |
| 18092916 | HEMT AND METHOD OF FABRICATING THE SAME | January 2023 | April 2024 | Allow | 16 | 0 | 0 | No | No |
| 18091035 | LIGHT-EMITTING DEVICE | December 2022 | September 2024 | Allow | 21 | 0 | 0 | Yes | No |
| 18089799 | Power Device with Current Sense | December 2022 | May 2025 | Allow | 28 | 0 | 0 | No | No |
| 18012240 | GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE CURRENT AND FABRICATING METHOD THEREOF | December 2022 | August 2023 | Allow | 8 | 1 | 0 | No | No |
| 18077539 | DEVICES FOR INTEGRATED FRONT-END CIRCUITS | December 2022 | June 2024 | Allow | 18 | 2 | 1 | Yes | No |
| 18075433 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | December 2022 | April 2024 | Allow | 16 | 0 | 0 | No | No |
| 18075427 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | December 2022 | April 2024 | Allow | 16 | 0 | 0 | No | No |
| 17924642 | SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION | November 2022 | August 2024 | Allow | 21 | 4 | 1 | Yes | No |
| 17977174 | STAND-BY CIRCUIT | October 2022 | May 2025 | Allow | 30 | 0 | 0 | No | No |
| 18050181 | Manufacturing Method of Forming Semiconductor Device and Semiconductor Device | October 2022 | July 2025 | Allow | 33 | 0 | 1 | No | No |
| 17921781 | Group III Nitride-Based Transistor Device | October 2022 | April 2025 | Allow | 30 | 0 | 0 | No | No |
| 17959048 | HIGH-LINEARITY GaN HEMT RADIO FREQUENCY POWER DEVICE FOR IMPROVING TRANSCONDUCTANCE UNDER LARGE SIGNAL | October 2022 | July 2025 | Allow | 33 | 1 | 0 | No | No |
| 17916635 | N-FACE POLAR GAN-BASED DEVICE AND COMPOSITE SUBSTRATE THEREOF, AND METHOD OF MANUFACTURING COMPOSITE SUBSTRATE | October 2022 | October 2025 | Allow | 36 | 1 | 0 | No | No |
| 17951203 | N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER | September 2022 | February 2023 | Allow | 5 | 0 | 0 | No | No |
| 17934389 | ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATERIALS | September 2022 | June 2025 | Allow | 33 | 0 | 1 | No | No |
| 17906808 | NITRIDE SEMICONDUCTOR DEVICE | September 2022 | June 2025 | Allow | 33 | 1 | 0 | Yes | No |
| 17930188 | Leakage Current Reduction in Electrical Isolation Gate Structures | September 2022 | December 2024 | Allow | 27 | 0 | 0 | No | No |
| 17902383 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME | September 2022 | September 2024 | Allow | 25 | 1 | 1 | Yes | No |
| 17902649 | LIGHT SOURCE DEVICE | September 2022 | November 2024 | Allow | 27 | 2 | 0 | No | No |
| 17901332 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE | September 2022 | September 2024 | Allow | 24 | 1 | 0 | No | No |
| 17881984 | BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES | August 2022 | May 2025 | Allow | 34 | 3 | 0 | No | No |
| 17873300 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | July 2022 | August 2025 | Abandon | 36 | 0 | 1 | No | No |
| 17806400 | SEMICONDUCTOR LAYER STRUCTURE | June 2022 | February 2023 | Allow | 8 | 1 | 0 | Yes | No |
| 17805787 | NITRIDE SEMICONDUCTOR DEVICE | June 2022 | July 2025 | Abandon | 38 | 2 | 1 | No | No |
| 17781713 | SEMICONDUCTOR MODULE AND POWER CONVERSION APPARATUS | June 2022 | November 2024 | Allow | 29 | 0 | 0 | No | No |
| 17830210 | SEMICONDUCTOR MODULE CASE AND METHOD FOR PRODUCING SEMICONDUCTOR MODULE CASE | June 2022 | April 2025 | Allow | 34 | 1 | 0 | No | No |
| 17827809 | METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR | May 2022 | December 2023 | Allow | 19 | 0 | 0 | No | No |
| 17748487 | SEMICONDUCTOR DEVICE FOR RF INTEGRATED CIRCUIT | May 2022 | September 2022 | Allow | 4 | 0 | 0 | No | No |
| 17743720 | Group III Nitride-Based Transistor Device | May 2022 | July 2024 | Allow | 27 | 2 | 0 | Yes | No |
| 17660721 | CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFECT TRANSISTORS HAVING A BACKSIDE CONTACT | April 2022 | July 2024 | Allow | 27 | 0 | 1 | No | No |
| 17728389 | COMPOUND SEMICONDUCTOR DEVICE, AMPLIFIER, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE | April 2022 | March 2025 | Allow | 35 | 0 | 0 | No | No |
| 17765765 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | March 2022 | September 2023 | Allow | 17 | 2 | 1 | Yes | No |
| 17707564 | SEMICONDUCTOR DEVICE | March 2022 | June 2024 | Allow | 26 | 1 | 0 | No | No |
| 17703779 | HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURING METHOD THEREOF | March 2022 | April 2024 | Allow | 25 | 1 | 0 | Yes | No |
| 17655405 | MULTILAYER SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING MULTILAYER SEMICONDUCTOR STRUCTURE | March 2022 | November 2024 | Allow | 32 | 3 | 1 | No | No |
| 17761611 | DISPLAY DEVICE | March 2022 | June 2024 | Allow | 27 | 0 | 0 | No | No |
| 17687164 | NITRIDE SEMICONDUCTOR DEVICE | March 2022 | September 2023 | Allow | 18 | 0 | 0 | Yes | No |
| 17572050 | High Voltage Blocking III-V Semiconductor Device | January 2022 | October 2023 | Allow | 22 | 0 | 0 | No | No |
| 17646817 | METHODS AND STRUCTURES FOR CHANGING WAFER BOW | January 2022 | November 2023 | Allow | 23 | 1 | 1 | No | No |
| 17624336 | GALLIUM NITRIDE POWER DEVICE AND MANUFACTURING METHOD THEREOF | December 2021 | July 2022 | Allow | 6 | 0 | 0 | No | No |
| 17559786 | SEMICONDUCTOR MEMORY DEVICE FOR SUPPRESSING VARIATIONS OF IMPURITY CONCENTRATIONS | December 2021 | June 2025 | Allow | 42 | 3 | 0 | No | No |
| 17540486 | NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL ARRAY, AND METHOD OF MANUFACTURING THE SAME | December 2021 | November 2023 | Allow | 24 | 1 | 0 | No | No |
| 17456943 | LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HORIZONTAL WIDTH AND METHODS TO FORM SAME | November 2021 | November 2023 | Allow | 23 | 1 | 1 | No | No |
| 17595738 | WAFER, OPTICAL EMISSION DEVICE, METHOD OF PRODUCING A WAFER, AND METHOD OF CHARACTERIZING A SYSTEM FOR PRODUCING A WAFER | November 2021 | September 2024 | Allow | 34 | 3 | 1 | Yes | No |
| 17519319 | METHOD OF FORMING A GaN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA | November 2021 | August 2023 | Allow | 21 | 0 | 0 | Yes | No |
| 17509220 | Passivated and Faceted for Fin Field Effect Transistor | October 2021 | September 2023 | Allow | 22 | 0 | 0 | Yes | No |
| 17594636 | HIGH-THRESHOLD-VOLTAGE NORMALLY-OFF HIGH-ELECTRON-MOBILITY TRANSISTOR AND PREPARATION METHOD THEREFOR | October 2021 | February 2025 | Allow | 39 | 1 | 1 | No | No |
| 17494639 | SEMICONDUCTOR DEVICE | October 2021 | June 2024 | Allow | 32 | 2 | 1 | Yes | No |
| 17492032 | BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY | October 2021 | July 2025 | Allow | 45 | 2 | 0 | Yes | No |
| 17487117 | High Voltage Gallium Nitride Field Effect Transistor | September 2021 | June 2025 | Abandon | 45 | 1 | 1 | No | No |
| 17479934 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME | September 2021 | March 2025 | Allow | 41 | 3 | 0 | No | No |
| 17439695 | Method for Structuring a Semiconductor Surface and Semiconductor Body Comprising a Semiconductor Surface Having at Least One Structure | September 2021 | June 2024 | Allow | 33 | 1 | 1 | Yes | No |
| 17474475 | SEMICONDUCTOR DEVICE | September 2021 | January 2025 | Allow | 40 | 2 | 0 | No | No |
| 17468315 | SEMICONDUCTOR DEVICE | September 2021 | April 2025 | Allow | 43 | 2 | 0 | Yes | No |
| 17458827 | TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION | August 2021 | August 2024 | Allow | 35 | 0 | 0 | Yes | No |
| 17400123 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | August 2021 | March 2025 | Abandon | 43 | 2 | 1 | No | No |
| 17401301 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | August 2021 | August 2024 | Allow | 36 | 1 | 1 | No | No |
| 17398546 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | August 2021 | March 2025 | Allow | 43 | 2 | 1 | Yes | No |
| 17370287 | HIGH ELECTRON MOBILITY TRANSISTOR | July 2021 | March 2024 | Allow | 32 | 1 | 0 | No | No |
| 17362317 | FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES | June 2021 | September 2023 | Allow | 27 | 0 | 0 | No | No |
| 17355364 | Ferroelectric Device and Methods of Fabrication Thereof | June 2021 | January 2025 | Allow | 43 | 3 | 1 | No | No |
| 17349327 | FIELD EFFECT TRANSISTOR INCLUDING GRADUALLY VARYING COMPOSITION CHANNEL | June 2021 | September 2023 | Allow | 27 | 1 | 1 | Yes | No |
| 17330865 | NANOSCALE LIGHT EMITTING DIODE, AND METHODS OF MAKING SAME | May 2021 | March 2023 | Allow | 22 | 0 | 0 | Yes | No |
| 17236311 | NARROW BAND FILTER WITH HIGH TRANSMISSION | April 2021 | July 2024 | Allow | 39 | 0 | 1 | No | No |
| 17228602 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME | April 2021 | October 2023 | Allow | 30 | 2 | 0 | Yes | No |
| 17205192 | SENSORS FOR SIMULTANEOUS PASSIVE IMAGING AND RANGE FINDING | March 2021 | September 2023 | Allow | 30 | 2 | 0 | Yes | No |
| 17200916 | HIGH ELECTRON MOBILITY TRANSISTOR | March 2021 | April 2024 | Allow | 37 | 3 | 1 | Yes | No |
| 17185979 | SEMICONDUCTOR DEVICE | February 2021 | January 2024 | Allow | 34 | 3 | 1 | Yes | No |
| 17187176 | Self-Protective Layer Formed on High-K Dielectric Layer | February 2021 | October 2023 | Allow | 32 | 2 | 0 | Yes | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner WITHERS, GRANT S.
With a 0.0% reversal rate, the PTAB affirms the examiner's rejections in the vast majority of cases. This reversal rate is in the bottom 25% across the USPTO, indicating that appeals face significant challenges here.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 50.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is in the top 25% across the USPTO, indicating that filing appeals is particularly effective here. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.
⚠ Appeals to PTAB face challenges. Ensure your case has strong merit before committing to full Board review.
✓ Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.
Examiner WITHERS, GRANT S works in Art Unit 2891 and has examined 553 patent applications in our dataset. With an allowance rate of 90.8%, this examiner has an above-average tendency to allow applications. Applications typically reach final disposition in approximately 19 months.
Examiner WITHERS, GRANT S's allowance rate of 90.8% places them in the 75% percentile among all USPTO examiners. This examiner has an above-average tendency to allow applications.
On average, applications examined by WITHERS, GRANT S receive 1.44 office actions before reaching final disposition. This places the examiner in the 23% percentile for office actions issued. This examiner issues significantly fewer office actions than most examiners.
The median time to disposition (half-life) for applications examined by WITHERS, GRANT S is 19 months. This places the examiner in the 95% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.
Conducting an examiner interview provides a +12.0% benefit to allowance rate for applications examined by WITHERS, GRANT S. This interview benefit is in the 47% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.
When applicants file an RCE with this examiner, 36.1% of applications are subsequently allowed. This success rate is in the 82% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.
This examiner enters after-final amendments leading to allowance in 28.9% of cases where such amendments are filed. This entry rate is in the 41% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.
When applicants request a pre-appeal conference (PAC) with this examiner, 0.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 15% percentile among all examiners. Note: Pre-appeal conferences show limited success with this examiner compared to others. While still worth considering, be prepared to proceed with a full appeal brief if the PAC does not result in favorable action.
This examiner withdraws rejections or reopens prosecution in 80.0% of appeals filed. This is in the 73% percentile among all examiners. Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.
When applicants file petitions regarding this examiner's actions, 41.7% are granted (fully or in part). This grant rate is in the 33% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.
Examiner's Amendments: This examiner makes examiner's amendments in 0.7% of allowed cases (in the 64% percentile). This examiner makes examiner's amendments more often than average to place applications in condition for allowance (MPEP § 1302.04).
Quayle Actions: This examiner issues Ex Parte Quayle actions in 1.6% of allowed cases (in the 66% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.