Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18893967 | METHOD FOR MANUFACTURING SEMICONDUCTOR STACK STRUCTURE WITH ULTRA THIN DIE | September 2024 | April 2025 | Allow | 6 | 1 | 1 | No | No |
| 18791575 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON METAL SUBSTRATE | August 2024 | April 2025 | Allow | 9 | 0 | 0 | No | No |
| 18439018 | PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM | February 2024 | March 2025 | Allow | 13 | 1 | 0 | No | No |
| 18433472 | DISPLAY SUBSTRATE AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE | February 2024 | March 2026 | Allow | 25 | 1 | 0 | No | No |
| 18432778 | SILICON-ON-INSULATOR SUBSTRATE INCLUDING TRAP-RICH LAYER AND METHODS FOR MAKING THEREOF | February 2024 | August 2025 | Allow | 18 | 1 | 0 | Yes | No |
| 18416243 | Integrated Circuitry, A Memory Array Comprising Strings Of Memory Cells, A Method Used In Forming A Conductive Via, A Method Used In Forming A Memory Array Comprising Strings Of Memory Cells | January 2024 | November 2024 | Allow | 10 | 0 | 0 | No | No |
| 18412645 | MANUFACTURING METHOD FOR SILICON NITRIDE THIN FILM, THIN FILM TRANSISTOR AND DISPLAY PANEL | January 2024 | November 2024 | Allow | 10 | 0 | 0 | No | No |
| 18411914 | LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL | January 2024 | August 2025 | Allow | 19 | 1 | 1 | No | No |
| 18410333 | METHOD OF FORMING AN ELECTRONIC STRUCTURE USING REFORMING GAS, SYSTEM FOR PERFORMING THE METHOD, AND STRUCTURE FORMED USING THE METHOD | January 2024 | January 2025 | Allow | 12 | 1 | 0 | No | No |
| 18402971 | RF SWITCH DEVICE WITH A SIDEWALL SPACER HAVING A LOW DIELECTRIC CONSTANT | January 2024 | August 2024 | Allow | 8 | 0 | 0 | No | No |
| 18563937 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | November 2023 | March 2026 | Allow | 28 | 0 | 0 | No | No |
| 18518459 | SEMICONDUCTOR DEVICE | November 2023 | March 2026 | Allow | 28 | 1 | 0 | No | No |
| 18563665 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT | November 2023 | March 2026 | Allow | 28 | 0 | 0 | No | No |
| 18514324 | METHOD OF MANUFACTURING AN ELECTRONIC DEVICE AND ELECTRONIC DEVICE MANUFACTURED THEREBY | November 2023 | March 2026 | Allow | 28 | 1 | 0 | No | No |
| 18561734 | METHOD FOR MANUFACTURING SEMICONDUCTOR STACK STRUCTURE WITH ULTRA THIN DIE | November 2023 | July 2025 | Allow | 20 | 1 | 0 | No | No |
| 18383976 | AREA SELECTIVE DEPOSITION OF HARDMASKS FOR VACUUM GAP FORMATION | October 2023 | January 2026 | Allow | 27 | 0 | 0 | No | No |
| 18494450 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | October 2023 | August 2025 | Allow | 22 | 1 | 0 | No | No |
| 18287538 | LIGHT-EMITTING ELEMENT, QUANTUM DOT SOLUTION, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT | October 2023 | January 2026 | Allow | 27 | 0 | 0 | No | No |
| 18549757 | METHOD AND SYSTEM FOR TREATING A STACK INTENDED FOR THE MANUFACTURE OF A HETEROJUNCTION PHOTOVOLTAIC CELL | October 2023 | February 2026 | Allow | 30 | 0 | 0 | No | No |
| 18374832 | METHODS FOR DEPOSITING GAP FILLING FLUIDS AND RELATED SYSTEMS AND DEVICES | September 2023 | January 2025 | Allow | 16 | 1 | 0 | No | No |
| 18464993 | METHOD FOR FILLING GAP | September 2023 | January 2026 | Allow | 28 | 0 | 0 | No | No |
| 18461976 | METHOD OF DEPOSITING ATOMIC LAYER | September 2023 | December 2025 | Allow | 27 | 0 | 0 | No | No |
| 18458486 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | August 2023 | April 2025 | Allow | 20 | 1 | 0 | No | No |
| 18232313 | Deposition of Thick Layers of Silicon Dioxide | August 2023 | November 2025 | Allow | 27 | 0 | 0 | Yes | No |
| 18229544 | CONCURRENT OR CYCLICAL ETCH AND DIRECTIONAL DEPOSITION | August 2023 | October 2025 | Allow | 26 | 0 | 0 | No | No |
| 18227016 | METHOD OF FORMING TREATED SILICON-CARBON MATERIAL | July 2023 | November 2025 | Allow | 27 | 0 | 0 | No | No |
| 18357300 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | July 2023 | December 2024 | Allow | 16 | 1 | 0 | No | No |
| 18223543 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME | July 2023 | June 2024 | Allow | 11 | 1 | 0 | No | No |
| 18349930 | SYSTEMS AND METHODS FOR ANALYZING DEFECTS IN CVD FILMS | July 2023 | January 2025 | Allow | 18 | 1 | 0 | No | No |
| 18218726 | METHOD FOR SELECTIVE DEPOSITION OF SILICON NITRIDE AND STRUCTURE INCLUDING SELECTIVELY-DEPOSITED SILICON NITRIDE LAYER | July 2023 | September 2025 | Allow | 27 | 0 | 0 | Yes | No |
| 18344181 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | June 2023 | March 2026 | Allow | 32 | 1 | 0 | No | No |
| 18342296 | METHOD OF USING DUAL FREQUENCY RF POWER IN A PROCESS CHAMBER | June 2023 | July 2024 | Allow | 12 | 0 | 0 | No | No |
| 18342048 | TOPOLOGY SELECTIVE AND SACRIFICIAL SILICON NITRIDE LAYER FOR GENERATING SPACERS FOR A SEMICONDUCTOR DEVICE DRAIN | June 2023 | November 2024 | Allow | 17 | 1 | 0 | No | No |
| 18210522 | DOPED SILICON OXIDE FOR BOTTOM-UP DEPOSITION | June 2023 | March 2026 | Allow | 33 | 1 | 0 | No | No |
| 18209583 | SILICON COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME | June 2023 | February 2026 | Allow | 32 | 1 | 0 | Yes | No |
| 18334058 | METHODS AND SYSTEMS FOR FORMING A LAYER COMPRISING SILICON OXIDE | June 2023 | February 2026 | Allow | 32 | 1 | 0 | Yes | No |
| 18254477 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | May 2023 | September 2025 | Allow | 27 | 0 | 0 | No | No |
| 18201453 | METHOD FOR INCREASING BRIDGING PROCESS WINDOW OF CONTACT HOLE AND GATE OF DEVICE | May 2023 | August 2025 | Allow | 27 | 0 | 0 | No | No |
| 18197552 | METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH INCREASED ETCH SELECTIVITY | May 2023 | February 2026 | Allow | 33 | 1 | 0 | Yes | No |
| 18314885 | System and Method for Semiconductor Structure | May 2023 | September 2025 | Allow | 29 | 0 | 1 | No | No |
| 18195196 | NITROGEN-RICH SILICON NITRIDE FILMS FOR THIN FILM TRANSISTORS | May 2023 | June 2024 | Allow | 13 | 1 | 0 | No | No |
| 18249831 | ALKOXYDISILOXANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM | April 2023 | February 2026 | Allow | 34 | 1 | 0 | No | No |
| 18032264 | FILM FORMING METHOD AND FILM FORMING APPARATUS | April 2023 | December 2025 | Allow | 32 | 1 | 0 | No | No |
| 18134802 | CHALCOGEN PRECURSORS FOR DEPOSITION OF SILICON NITRIDE | April 2023 | August 2024 | Allow | 16 | 2 | 0 | No | No |
| 18132547 | SUBSTRATE PROCESSING METHOD | April 2023 | February 2026 | Allow | 34 | 1 | 0 | No | No |
| 18194722 | FILM FORMING METHOD | April 2023 | July 2025 | Allow | 28 | 0 | 0 | No | No |
| 18192563 | METHODS FOR DEPOSITING DIELECTRIC FILMS WITH INCREASED STABILITY | March 2023 | December 2025 | Allow | 33 | 1 | 0 | Yes | No |
| 18127213 | INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRIDE DEPOSITION | March 2023 | December 2025 | Allow | 33 | 1 | 0 | No | No |
| 18125509 | PEALD Nitride Films | March 2023 | August 2024 | Allow | 17 | 1 | 0 | No | No |
| 18185205 | METHOD OF LINEARIZED FILM OXIDATION GROWTH | March 2023 | November 2024 | Allow | 20 | 1 | 0 | No | No |
| 18119347 | SUBSTRATES FOR OPTICAL AND ELECTRON MICROSCOPY OF 2D MATERIALS | March 2023 | June 2025 | Allow | 27 | 0 | 0 | No | No |
| 18179293 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | March 2023 | May 2023 | Allow | 3 | 0 | 0 | No | No |
| 18176692 | METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | March 2023 | July 2025 | Allow | 28 | 0 | 0 | No | No |
| 18041726 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | February 2023 | October 2025 | Allow | 32 | 1 | 0 | No | No |
| 18109365 | ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION | February 2023 | June 2025 | Allow | 28 | 0 | 0 | No | No |
| 18161689 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME | January 2023 | March 2026 | Abandon | 38 | 1 | 1 | No | No |
| 18007318 | FILM FORMING METHOD AND FILM FORMING APPARATUS | January 2023 | October 2025 | Allow | 33 | 1 | 0 | No | No |
| 18103370 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF | January 2023 | February 2026 | Allow | 36 | 1 | 1 | Yes | No |
| 18007145 | METHOD FOR TRANSFERRING A THIN LAYER ONTO A SUPPORT SUBSTRATE PROVIDED WITH A CHARGE-TRAPPING LAYER | January 2023 | September 2025 | Allow | 32 | 1 | 0 | Yes | No |
| 18156142 | SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION | January 2023 | November 2025 | Allow | 34 | 1 | 0 | No | No |
| 18155507 | Cyclic Low Temperature Film Growth Processes | January 2023 | August 2024 | Allow | 19 | 1 | 0 | No | No |
| 18150408 | ANTIFERROELECTRIC NON-VOLATILE MEMORY | January 2023 | October 2025 | Allow | 34 | 1 | 0 | Yes | No |
| 18004362 | METHOD FOR PRODUCING A DIELECTRIC LAYER ON A STRUCTURE MADE OF MATERIALS III-V | January 2023 | February 2026 | Allow | 38 | 2 | 0 | No | No |
| 18088041 | METHOD OF FORMING LOW-K MATERIAL LAYER WITH HIGH-FREQUENCY POWER, STRUCTURE INCLUDING THE LAYER, AND SYSTEM FOR FORMING SAME | December 2022 | October 2025 | Allow | 33 | 1 | 0 | Yes | No |
| 18003133 | IMPURITY REDUCTION IN SILICON-CONTAINING FILMS | December 2022 | May 2025 | Allow | 28 | 0 | 0 | No | No |
| 18003145 | REDUCING INTRALEVEL CAPACITANCE IN SEMICONDUCTOR DEVICES | December 2022 | May 2025 | Allow | 28 | 0 | 0 | No | No |
| 18087257 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS | December 2022 | September 2025 | Allow | 33 | 1 | 0 | No | No |
| 18002627 | ADVANCED SELF ALIGNED MULTIPLE PATTERNING USING TIN OXIDE | December 2022 | January 2026 | Allow | 36 | 1 | 0 | No | No |
| 18068110 | Slot Contacts and Method Forming Same | December 2022 | February 2024 | Allow | 14 | 0 | 0 | No | No |
| 18079318 | DEPOSITION OF SILICON NITRIDE WITH ENHANCED SELECTIVITY | December 2022 | November 2025 | Allow | 35 | 1 | 0 | Yes | No |
| 18062518 | Method of forming thin film, method of forming thin film structure, method of manufacturing capacitor, capacitor and memory device including the same | December 2022 | February 2026 | Allow | 38 | 1 | 1 | No | No |
| 18074849 | SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS | December 2022 | August 2024 | Allow | 20 | 1 | 0 | Yes | No |
| 17990867 | METHODS OF FILLING RECESSES ON SUBSTRATE SURFACES AND FORMING VOIDS THEREIN | November 2022 | April 2025 | Allow | 29 | 0 | 0 | No | No |
| 17983131 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | November 2022 | January 2024 | Allow | 14 | 1 | 0 | No | No |
| 18053220 | Integrated Circuit Features with Obtuse Angles and Method of Forming Same | November 2022 | May 2024 | Allow | 18 | 1 | 0 | No | No |
| 17977635 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | October 2022 | December 2023 | Allow | 14 | 1 | 0 | No | No |
| 18050142 | SELECTIVE THERMAL DEPOSITION METHOD | October 2022 | August 2025 | Allow | 33 | 1 | 0 | Yes | No |
| 17971265 | METHOD FOR DEPOSITING A GAP-FILL LAYER BY PLASMA-ASSISTED DEPOSITION | October 2022 | December 2023 | Allow | 14 | 1 | 0 | No | No |
| 17968549 | VERTICAL TRANSISTOR AND METHOD OF FORMING THE VERTICAL TRANSISTOR | October 2022 | May 2024 | Allow | 19 | 1 | 0 | Yes | No |
| 17966110 | SEMICONDUCTOR DEVICE AND A METHOD FOR FILM DEPOSITION | October 2022 | January 2026 | Abandon | 39 | 1 | 1 | No | No |
| 17963841 | HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM | October 2022 | February 2024 | Allow | 16 | 1 | 0 | No | No |
| 17963059 | HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM | October 2022 | June 2024 | Allow | 20 | 2 | 0 | Yes | No |
| 17961224 | CARBON HARD MASKS FOR PATTERNING APPLICATIONS AND METHODS RELATED THERETO | October 2022 | August 2023 | Allow | 10 | 1 | 0 | No | No |
| 17957552 | BACKSIDE WAFER TREATMENTS TO REDUCE DISTORTIONS AND OVERLAY ERRORS DURING WAFER CHUCKING | September 2022 | April 2025 | Allow | 30 | 0 | 0 | No | No |
| 17936607 | SELECTIVE DEPOSITION OF ORGANIC MATERIAL | September 2022 | March 2025 | Allow | 30 | 0 | 0 | No | No |
| 17953585 | MULTIPLE-LAYER METHOD AND SYSTEM FOR FORMING MATERIAL WITHIN A GAP | September 2022 | August 2025 | Allow | 35 | 1 | 0 | Yes | No |
| 17944583 | METHOD OF FORMING AN ELECTRONIC STRUCTURE USING REFORMING GAS, SYSTEM FOR PERFORMING THE METHOD, AND STRUCTURE FORMED USING THE METHOD | September 2022 | October 2023 | Allow | 13 | 1 | 0 | No | No |
| 17891089 | Method of Deposition | August 2022 | August 2025 | Allow | 36 | 1 | 0 | Yes | No |
| 17885570 | HIGH-RESISTANCE RESISTOR BASED ON SILICON CARBIDE AND MANUFACTURING METHOD THEREOF | August 2022 | January 2025 | Allow | 30 | 0 | 0 | No | No |
| 17760145 | FILM FORMATION METHOD | August 2022 | August 2025 | Allow | 36 | 1 | 0 | No | No |
| 17878443 | SOURCE-BODY SELF-ALIGNED METHOD OF A VERTICAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR | August 2022 | January 2025 | Allow | 30 | 0 | 0 | No | No |
| 17796552 | DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE DISPLAY SUBSTRATE AND DISPLAY DEVICE | July 2022 | March 2025 | Allow | 32 | 0 | 0 | No | No |
| 17815519 | STRUCTURE FOR FRINGING CAPACITANCE CONTROL | July 2022 | October 2023 | Allow | 15 | 1 | 0 | No | No |
| 17873597 | FORMING FILMS WITH IMPROVED FILM QUALITY | July 2022 | January 2025 | Allow | 30 | 0 | 0 | No | No |
| 17814565 | METAL-ORGANIC PULSED LASER DEPOSITION FOR STOICHIOMETRIC COMPLEX OXIDE THIN FILMS | July 2022 | May 2023 | Allow | 10 | 0 | 0 | No | No |
| 17794723 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME | July 2022 | February 2025 | Allow | 31 | 0 | 0 | No | No |
| 17759072 | UV CURE FOR LOCAL STRESS MODULATION | July 2022 | January 2025 | Allow | 30 | 0 | 0 | No | No |
| 17866730 | SUBSTRATE PROCESSING METHOD | July 2022 | July 2025 | Allow | 36 | 1 | 0 | No | No |
| 17867010 | Methods For Stabilization Of Self-Assembled Monolayers (SAMs) Using Sequentially Pulsed Initiated Chemical Vapor Deposition (spiCVD) | July 2022 | March 2025 | Allow | 32 | 1 | 0 | No | No |
| 17812721 | METHOD FOR MANUFACTURING SHALLOW TRENCH ISOLATION STRUCTURE, SHALLOW TRENCH ISOLATION STRUCTURE AND SEMICONDUCTOR STRUCTURE | July 2022 | April 2025 | Allow | 34 | 1 | 0 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner SARKAR, ASOK K.
With a 14.3% reversal rate, the PTAB affirms the examiner's rejections in the vast majority of cases. This reversal rate is below the USPTO average, indicating that appeals face more challenges here than typical.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 31.0% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is below the USPTO average, suggesting that filing an appeal has limited effectiveness in prompting favorable reconsideration.
⚠ Appeals to PTAB face challenges. Ensure your case has strong merit before committing to full Board review.
⚠ Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.
Examiner SARKAR, ASOK K works in Art Unit 2891 and has examined 1,742 patent applications in our dataset. With an allowance rate of 90.5%, this examiner has an above-average tendency to allow applications. Applications typically reach final disposition in approximately 19 months.
Examiner SARKAR, ASOK K's allowance rate of 90.5% places them in the 74% percentile among all USPTO examiners. This examiner has an above-average tendency to allow applications.
On average, applications examined by SARKAR, ASOK K receive 1.10 office actions before reaching final disposition. This places the examiner in the 11% percentile for office actions issued. This examiner issues significantly fewer office actions than most examiners.
The median time to disposition (half-life) for applications examined by SARKAR, ASOK K is 19 months. This places the examiner in the 95% percentile for prosecution speed. Applications move through prosecution relatively quickly with this examiner.
Conducting an examiner interview provides a -2.0% benefit to allowance rate for applications examined by SARKAR, ASOK K. This interview benefit is in the 9% percentile among all examiners. Note: Interviews show limited statistical benefit with this examiner compared to others, though they may still be valuable for clarifying issues.
When applicants file an RCE with this examiner, 39.4% of applications are subsequently allowed. This success rate is in the 90% percentile among all examiners. Strategic Insight: RCEs are highly effective with this examiner compared to others. If you receive a final rejection, filing an RCE with substantive amendments or arguments has a strong likelihood of success.
This examiner enters after-final amendments leading to allowance in 38.1% of cases where such amendments are filed. This entry rate is in the 58% percentile among all examiners. Strategic Recommendation: This examiner shows above-average receptiveness to after-final amendments. If your amendments clearly overcome the rejections and do not raise new issues, consider filing after-final amendments before resorting to an RCE.
When applicants request a pre-appeal conference (PAC) with this examiner, 171.4% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 92% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences are highly effective with this examiner compared to others. Before filing a full appeal brief, strongly consider requesting a PAC. The PAC provides an opportunity for the examiner and supervisory personnel to reconsider the rejection before the case proceeds to the PTAB.
This examiner withdraws rejections or reopens prosecution in 75.9% of appeals filed. This is in the 67% percentile among all examiners. Of these withdrawals, 59.1% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.
When applicants file petitions regarding this examiner's actions, 47.3% are granted (fully or in part). This grant rate is in the 42% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.
Examiner's Amendments: This examiner makes examiner's amendments in 9.2% of allowed cases (in the 92% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.9% of allowed cases (in the 60% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.