Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 19223587 | APPARATUS AND METHOD FOR GROWTH OF GALLIUM OXIDE CRYSTAL WITH AN OFFCUT | May 2025 | January 2026 | Allow | 8 | 1 | 1 | Yes | No |
| 19180342 | Preparation Method and Use of Two-dimensional MoS2 Materials | April 2025 | June 2025 | Allow | 2 | 0 | 0 | No | No |
| 18727633 | ORGANIC SINGLE CRYSTAL COMPOSITE ORIENTED POLYMER MEMBRANE, PREPARATION METHOD THEREFOR, OPTOELECTRONIC DEVICE AND APPLICATION THEREOF | July 2024 | July 2025 | Allow | 12 | 1 | 0 | No | No |
| 18735755 | INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL OR FROM THE SILICON FEED TUBE | June 2024 | May 2025 | Allow | 11 | 1 | 0 | No | No |
| 18610937 | ORGANIC ELECTROLUMINESCENT DEVICES | March 2024 | April 2025 | Allow | 13 | 1 | 0 | No | No |
| 18609883 | METHOD FOR PREPARING DIRECTIONALLY SOLIDIFIED TiAl ALLOY | March 2024 | April 2025 | Abandon | 13 | 2 | 0 | No | No |
| 18592587 | GROWTH METHOD FOR SINGLE CRYSTALS OF MAGNESIUM ALUMINATE SPINEL BY EDGE-DEFINED FILM-FED GROWTH TECHNIQUE | March 2024 | February 2026 | Allow | 24 | 0 | 0 | No | No |
| 18425035 | HIGH PRESSURE SPATIAL CHEMICAL VAPOR DEPOSITION SYSTEM AND RELATED PROCESS | January 2024 | August 2025 | Allow | 19 | 2 | 0 | No | No |
| 18577607 | DIAMOND FILM FORMATION METHOD AND DIAMOND FILM FORMATION DEVICE | January 2024 | August 2025 | Abandon | 19 | 1 | 0 | No | No |
| 18577074 | APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOSPHIDE IN MAGNETIC FIELD IN IMMERSION FASHION | January 2024 | January 2026 | Allow | 25 | 0 | 0 | No | No |
| 18571398 | Silicon Material Processing Apparatus, Silicon Ingot Production Equipment, and Silicon Material Processing Method | December 2023 | September 2024 | Allow | 9 | 1 | 0 | No | No |
| 18570788 | Quartz Crucible and Crystal Puller | December 2023 | November 2024 | Allow | 11 | 2 | 0 | No | No |
| 18564904 | Method For Growing Single-Crystal Silicon Ingots and Single-Crystal Silicon Ingots | November 2023 | January 2025 | Allow | 60 | 2 | 0 | No | No |
| 18380897 | METHOD OF USING SIC CONTAINER | October 2023 | March 2025 | Allow | 16 | 2 | 0 | No | No |
| 18244041 | PROCESSING CHAMBER WITH ANNEALING MINI-ENVIRONMENT | September 2023 | January 2025 | Allow | 16 | 2 | 0 | No | No |
| 18463949 | METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES | September 2023 | January 2025 | Allow | 16 | 2 | 0 | Yes | No |
| 18548938 | METHOD OF PRODUCING EPITAXIAL LAYER WAFERS IN A CHAMBER OF A DEPOSITION REACTOR | September 2023 | September 2025 | Allow | 24 | 0 | 0 | No | No |
| 18453559 | Method of Growing Single Crystal Diamond Assisted by Polycrystalline Diamond Growth | August 2023 | September 2024 | Abandon | 13 | 1 | 0 | No | No |
| 18448165 | SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME | August 2023 | February 2026 | Abandon | 30 | 1 | 0 | No | No |
| 18447493 | Apparatus and Method for Use with a Substrate Chamber | August 2023 | August 2025 | Allow | 24 | 3 | 0 | No | No |
| 18363816 | CHEMICAL VAPOR DEPOSITION REACTOR IN POLYSILICON PRODUCTION PROCESS | August 2023 | December 2025 | Allow | 29 | 1 | 0 | No | No |
| 18214981 | METHOD AND SYSTEM FOR LIQUID ENCAPSULATED GROWTH OF CADMIUM ZINC TELLURIDE CRYSTALS | June 2023 | March 2025 | Allow | 21 | 3 | 0 | Yes | No |
| 18340462 | CONTINUOUS REPLENISHMENT CRYSTAL GROWTH | June 2023 | November 2024 | Allow | 16 | 2 | 0 | No | No |
| 18334736 | NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZE | June 2023 | April 2025 | Allow | 22 | 2 | 0 | Yes | Yes |
| 18321747 | METHODS AND DEVICES FOR GROWING CRYSTALS WITH HIGH UNIFORMITY WITHOUT ANNEALING | May 2023 | November 2024 | Allow | 18 | 1 | 0 | No | No |
| 18321185 | CRYSTAL GROWTH STATION INCLUDING ADJUSTABLE CRYSTAL PULLING ASSEMBLY TO FACILITATE RAPID PRODUCTION | May 2023 | February 2026 | Allow | 33 | 1 | 0 | No | No |
| 18124685 | FILM DEPOSITION METHOD | March 2023 | May 2025 | Allow | 26 | 1 | 0 | No | No |
| 18179659 | METHOD FOR PRODUCING SEMICONDUCTOR QUANTUM DOTS | March 2023 | March 2026 | Allow | 36 | 0 | 1 | No | No |
| 18117981 | METHOD AND APPARATUS FOR MANUFACTURING DEFECT-FREE MONOCRYSTALLINE SILICON CRYSTAL | March 2023 | June 2025 | Allow | 28 | 0 | 0 | No | No |
| 18117556 | SINGLE CRYSTAL SILICON INGOT AND METHOD OF GROWING THE SAME | March 2023 | November 2025 | Abandon | 33 | 2 | 0 | No | No |
| 18172202 | SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES | February 2023 | August 2025 | Allow | 29 | 1 | 0 | No | No |
| 18111091 | APPARATUS AND METHOD FOR MANUFACTURING HEXAGONAL CRYSTALS | February 2023 | December 2024 | Allow | 22 | 0 | 1 | No | No |
| 18108461 | MANUFACTURE AND REPAIR OF HIGH TEMPERATURE REINFORCED SUPERCONDUCTORS | February 2023 | January 2025 | Allow | 24 | 1 | 0 | Yes | No |
| 18040098 | WATER-COOLED SCREEN FOR IMPROVING PULLING RATE OF SILICON CRYSTAL AND MOULD FOR PREPARING THE SAME | January 2023 | March 2026 | Abandon | 38 | 4 | 0 | No | No |
| 18149038 | METHOD FOR CRYSTAL PULLING | December 2022 | January 2025 | Allow | 25 | 1 | 0 | No | No |
| 18147438 | METHOD OF GROWING A SINGLE-CRYSTAL SILICON | December 2022 | September 2025 | Abandon | 33 | 3 | 0 | No | No |
| 18012639 | PRE-HEAT RING AND SUBSTRATE PROCESSING DEVICE | December 2022 | December 2024 | Allow | 23 | 1 | 0 | No | No |
| 18012563 | Crystal Growing Unit for Producing a Single Crystal | December 2022 | June 2025 | Allow | 30 | 3 | 0 | No | No |
| 18011926 | SiC CRYSTAL MANUFACTURING METHOD | December 2022 | December 2025 | Abandon | 36 | 3 | 0 | No | No |
| 18011422 | SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER | December 2022 | April 2025 | Allow | 28 | 1 | 1 | No | No |
| 18063752 | METHOD FOR TRANSFERRING A USEFUL LAYER OF CRYSTALLINE DIAMOND ONTO A SUPPORTING SUBSTRATE | December 2022 | October 2025 | Abandon | 34 | 3 | 0 | No | No |
| 17927810 | APPARATUS FOR HEATING MULTIPLE CRUCIBLES | November 2022 | March 2025 | Allow | 28 | 2 | 0 | No | No |
| 17988326 | FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOSITION (CBD) FOR PHOTONICS APPLICATIONS | November 2022 | September 2024 | Allow | 33 | 0 | 1 | No | No |
| 18051566 | FILM DEPOSITION METHOD AND METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM | November 2022 | March 2025 | Allow | 29 | 4 | 0 | No | No |
| 17968981 | PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE | October 2022 | September 2024 | Allow | 23 | 1 | 0 | No | No |
| 18046944 | OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SITU SUBSTRATE PRETREATMENT | October 2022 | August 2023 | Allow | 10 | 1 | 0 | No | No |
| 18046945 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | July 2023 | Allow | 9 | 2 | 0 | No | No |
| 18046953 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | August 2024 | Allow | 22 | 2 | 0 | Yes | No |
| 18046946 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | September 2023 | Allow | 11 | 1 | 0 | No | No |
| 18046943 | OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SITU SUBSTRATE PRETREATMENT | October 2022 | August 2023 | Allow | 10 | 1 | 0 | No | No |
| 18046950 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | August 2024 | Allow | 22 | 2 | 0 | No | No |
| 18046529 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | January 2024 | Abandon | 15 | 1 | 0 | No | No |
| 17964303 | USE OF ARRAYS OF QUARTZ PARTICLES DURING SINGLE CRYSTAL SILICON INGOT PRODUCTION | October 2022 | May 2025 | Allow | 31 | 3 | 0 | No | No |
| 17937862 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | March 2024 | Abandon | 17 | 3 | 0 | No | No |
| 17937840 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | December 2023 | Abandon | 14 | 2 | 0 | No | No |
| 17937791 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | December 2023 | Abandon | 14 | 2 | 0 | No | No |
| 17937787 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | July 2023 | Allow | 10 | 2 | 0 | No | No |
| 17937827 | Optimized Heteroepitaxial Growth of Semiconductors | October 2022 | March 2024 | Abandon | 18 | 3 | 0 | No | No |
| 17797063 | Growth Device and Method for Low-Stress Crystals | August 2022 | November 2025 | Abandon | 39 | 1 | 0 | No | No |
| 17796902 | FUSED QUARTZ CRUCIBLE FOR PRODUCING SILICON CRYSTALS, AND METHOD FOR PRODUCING A FUSED QUARTZ CRUCIBLE | August 2022 | October 2024 | Allow | 26 | 1 | 0 | No | No |
| 17791633 | Crystal Support and Crystal Growing Plant Having Such a Crystal Support | July 2022 | December 2024 | Allow | 29 | 2 | 0 | No | No |
| 17858915 | PRODUCTION AND USE OF DYNAMIC STATE CHARTS WHEN GROWING A SINGLE CRYSTAL SILICON INGOT | July 2022 | August 2023 | Allow | 14 | 2 | 0 | Yes | No |
| 17841243 | GALLIUM ARSENIDE SINGLE CRYSTAL AND PREPARATION METHOD THEREOF | June 2022 | February 2023 | Allow | 8 | 1 | 1 | Yes | No |
| 17785379 | SYSTEM AND METHOD FOR PRODUCING SINGLE CRYSTAL | June 2022 | November 2025 | Allow | 41 | 2 | 0 | No | No |
| 17784742 | METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL OF SILICON, WHICH SINGLE CRYSTAL IS DOPED WITH N-TYPE DOPANT | June 2022 | June 2024 | Allow | 24 | 1 | 0 | No | No |
| 17752439 | JANUS TRANSITION METAL DICHALCOGENIDE THIN FILM AND METHOD OF FABRICATING THE SAME | May 2022 | June 2025 | Allow | 37 | 1 | 0 | No | No |
| 17778835 | SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL INCLUDING THE SAME AND METHOD OF PRODUCING SYNTHETIC SINGLE CRYSTAL DIAMOND | May 2022 | December 2024 | Allow | 31 | 1 | 1 | Yes | No |
| 17663694 | METHODS FOR LOW ENERGY INORGANIC MATERIAL SYNTHESIS | May 2022 | June 2025 | Allow | 37 | 1 | 0 | Yes | No |
| 17740259 | METHOD, APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM FOR GROWING SINGLE CRYSTAL BY USING CZOCHRALSKI TECHNIQUE | May 2022 | November 2025 | Abandon | 42 | 2 | 0 | No | No |
| 17734511 | CONTAINER MADE OF SIC | May 2022 | March 2024 | Abandon | 23 | 3 | 0 | No | No |
| 17734578 | MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE | May 2022 | March 2025 | Allow | 34 | 5 | 0 | Yes | No |
| 17661052 | Optimized Heteroepitaxial Growth of Semiconductors | April 2022 | January 2023 | Allow | 9 | 1 | 0 | No | No |
| 17730742 | METHODS FOR PRODUCING SILICON INGOTS BY HORIZONTAL MAGNETIC FIELD CZOCHRALSKI | April 2022 | September 2024 | Abandon | 29 | 3 | 0 | No | No |
| 17771880 | METHOD AND APPARATUS FOR PULLING SINGLE CRYSTAL | April 2022 | June 2024 | Allow | 26 | 1 | 0 | No | No |
| 17771888 | A METHOD FOR GROWING HIGH-QUALITY HETEROEPITAXIAL MONOCLINIC GALLIUM OXIDE CRYSTAL | April 2022 | June 2024 | Allow | 25 | 1 | 0 | No | No |
| 17728902 | NON-POLAR III-NITRIDE BINARY AND TERNARY MATERIALS, METHOD FOR OBTAINING THEREOF AND USES | April 2022 | September 2024 | Allow | 29 | 0 | 1 | No | No |
| 17770918 | METHOD FOR PRODUCING CHEMICAL VAPOUR DEPOSITION DIAMOND | April 2022 | February 2026 | Abandon | 45 | 2 | 0 | No | Yes |
| 17721475 | GRAPHENE COMPOSITE AND METHOD FOR MANUFACTURING THE SAME | April 2022 | July 2024 | Abandon | 27 | 3 | 0 | No | No |
| 17716487 | DYNAMIC BALANCING SEED LIFT | April 2022 | September 2024 | Abandon | 30 | 0 | 1 | No | No |
| 17766467 | METHOD FOR PRODUCING GALLIUM PRECURSOR AND METHOD FOR PRODUCING LAMINATED BODY USING THE SAME | April 2022 | September 2024 | Allow | 29 | 1 | 0 | No | No |
| 17675708 | CRYSTAL GROWING ASSEMBLY WITH COMBINATION LIFT ARM AND WINCH | February 2022 | March 2025 | Abandon | 37 | 1 | 0 | No | No |
| 17668686 | Method for producing stable-phase crystals using physical grinding | February 2022 | April 2025 | Allow | 38 | 3 | 0 | No | No |
| 17648423 | METHOD FOR PREPARING LARGE-SIZE TWO-DIMENSIONAL LAYERED METAL THIOPHOSPHATE CRYSTAL | January 2022 | August 2023 | Allow | 18 | 1 | 0 | No | No |
| 17578573 | METHOD AND APPARATUS FOR GROWING SILICON SINGLE CRYSTAL INGOT | January 2022 | November 2023 | Allow | 22 | 1 | 0 | No | No |
| 17572851 | SEED LIFTING AND ROTATING SYSTEM FOR USE IN CRYSTAL GROWTH | January 2022 | July 2023 | Allow | 18 | 1 | 0 | No | No |
| 17570517 | ARTIFICIAL DIAMOND PLASMA PRODUCTION DEVICE | January 2022 | July 2024 | Allow | 30 | 0 | 0 | No | No |
| 17570146 | INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL OR FROM THE SILICON FEED TUBE | January 2022 | March 2024 | Allow | 27 | 3 | 0 | No | No |
| 17625268 | METHOD FOR PULLING A SINGLE CRYSTAL OF SILICON IN ACCORDANCE WITH THE CZOCHRALSKI METHOD | January 2022 | March 2025 | Allow | 39 | 3 | 0 | No | No |
| 17646989 | Continuous Replenishment Crystal Growth | January 2022 | March 2023 | Allow | 15 | 1 | 0 | No | No |
| 17619728 | STRAIN ENGINEERING AND EPITAXIAL STABILIZATION OF HALIDE PEROVSKITES | December 2021 | July 2025 | Allow | 43 | 5 | 0 | No | No |
| 17457709 | Laser-Assisted Epitaxy and Etching for Manufacturing Integrated Circuits | December 2021 | October 2025 | Allow | 47 | 4 | 1 | No | No |
| 17595832 | PIEZOELECTRIC SINGLE CRYSTAL M3RE(PO4)3 AND THE PREPARATION METHOD AND APPLICATION THEREOF | November 2021 | December 2025 | Allow | 49 | 3 | 0 | No | No |
| 17610890 | Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plate-Shaped Single-Crystal Production Method | November 2021 | November 2023 | Allow | 24 | 1 | 0 | No | No |
| 17608627 | METHOD AND CRUCIBLE FOR PRODUCING PARTICLE-FREE AND NITROGEN-FREE SILICON INGOTS BY MEANS OF TARGETED SOLIDIFICATION, SILICON INGOT, AND THE USE OF THE CRUCIBLE | November 2021 | June 2025 | Abandon | 44 | 2 | 0 | Yes | No |
| 17516326 | INTEGRATED EPITAXY AND PRECLEAN SYSTEM | November 2021 | June 2024 | Allow | 32 | 3 | 0 | Yes | Yes |
| 17510529 | NOZZLE EXIT CONTOURS FOR PATTERN COMPOSITION | October 2021 | December 2023 | Allow | 26 | 1 | 0 | No | No |
| 17606193 | DEPOSITION PROCESS USING ADDITIONAL CHLORIDE-BASED PRECURSORS | October 2021 | March 2024 | Abandon | 28 | 2 | 0 | No | No |
| 17502615 | SUBSTRATE PROCESSING APPARATUS | October 2021 | November 2024 | Allow | 37 | 3 | 0 | No | No |
| 17496867 | IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND THERMAL TREATMENT OF ALUMINUM NITRIDE CRYSTALS | October 2021 | December 2023 | Allow | 26 | 2 | 1 | Yes | Yes |
| 17469031 | ACTIVE BALANCING SEED LIFT | September 2021 | September 2024 | Abandon | 37 | 0 | 1 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner SONG, MATTHEW J.
With a 34.5% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 23.2% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is below the USPTO average, suggesting that filing an appeal has limited effectiveness in prompting favorable reconsideration.
✓ Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.
⚠ Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.
Examiner SONG, MATTHEW J works in Art Unit 1714 and has examined 788 patent applications in our dataset. With an allowance rate of 60.3%, this examiner allows applications at a lower rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 41 months.
Examiner SONG, MATTHEW J's allowance rate of 60.3% places them in the 20% percentile among all USPTO examiners. This examiner is less likely to allow applications than most examiners at the USPTO.
On average, applications examined by SONG, MATTHEW J receive 2.48 office actions before reaching final disposition. This places the examiner in the 72% percentile for office actions issued. This examiner issues a slightly above-average number of office actions.
The median time to disposition (half-life) for applications examined by SONG, MATTHEW J is 41 months. This places the examiner in the 20% percentile for prosecution speed. Applications take longer to reach final disposition with this examiner compared to most others.
Conducting an examiner interview provides a +14.1% benefit to allowance rate for applications examined by SONG, MATTHEW J. This interview benefit is in the 53% percentile among all examiners. Recommendation: Interviews provide an above-average benefit with this examiner and are worth considering.
When applicants file an RCE with this examiner, 20.1% of applications are subsequently allowed. This success rate is in the 22% percentile among all examiners. Strategic Insight: RCEs show lower effectiveness with this examiner compared to others. Consider whether a continuation application might be more strategic, especially if you need to add new matter or significantly broaden claims.
This examiner enters after-final amendments leading to allowance in 23.3% of cases where such amendments are filed. This entry rate is in the 31% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.
When applicants request a pre-appeal conference (PAC) with this examiner, 40.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 36% percentile among all examiners. Note: Pre-appeal conferences show below-average success with this examiner. Consider whether your arguments are strong enough to warrant a PAC request.
This examiner withdraws rejections or reopens prosecution in 51.7% of appeals filed. This is in the 22% percentile among all examiners. Of these withdrawals, 35.5% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner rarely withdraws rejections during the appeal process compared to other examiners. If you file an appeal, be prepared to fully prosecute it to a PTAB decision. Per MPEP § 1207, the examiner will prepare an Examiner's Answer maintaining the rejections.
When applicants file petitions regarding this examiner's actions, 63.0% are granted (fully or in part). This grant rate is in the 68% percentile among all examiners. Strategic Note: Petitions show above-average success regarding this examiner's actions. Petitionable matters include restriction requirements (MPEP § 1002.02(c)(2)) and various procedural issues.
Examiner's Amendments: This examiner makes examiner's amendments in 2.0% of allowed cases (in the 75% percentile). This examiner makes examiner's amendments more often than average to place applications in condition for allowance (MPEP § 1302.04).
Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.4% of allowed cases (in the 54% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.