USPTO Examiner SONG MATTHEW J - Art Unit 1714

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
18735755INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL OR FROM THE SILICON FEED TUBEJune 2024May 2025Allow1110NoNo
18610937ORGANIC ELECTROLUMINESCENT DEVICESMarch 2024April 2025Allow1310NoNo
18609883METHOD FOR PREPARING DIRECTIONALLY SOLIDIFIED TiAl ALLOYMarch 2024April 2025Abandon1320NoNo
18571398Silicon Material Processing Apparatus, Silicon Ingot Production Equipment, and Silicon Material Processing MethodDecember 2023September 2024Allow910NoNo
18570788Quartz Crucible and Crystal PullerDecember 2023November 2024Allow1120NoNo
18564904Method For Growing Single-Crystal Silicon Ingots and Single-Crystal Silicon IngotsNovember 2023January 2025Allow6020NoNo
18380897METHOD OF USING SIC CONTAINEROctober 2023March 2025Allow1620NoNo
18244041PROCESSING CHAMBER WITH ANNEALING MINI-ENVIRONMENTSeptember 2023January 2025Allow1620NoNo
18463949METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATESSeptember 2023January 2025Allow1620YesNo
18453559Method of Growing Single Crystal Diamond Assisted by Polycrystalline Diamond GrowthAugust 2023September 2024Abandon1310NoNo
18214981METHOD AND SYSTEM FOR LIQUID ENCAPSULATED GROWTH OF CADMIUM ZINC TELLURIDE CRYSTALSJune 2023March 2025Allow2130YesNo
18340462CONTINUOUS REPLENISHMENT CRYSTAL GROWTHJune 2023November 2024Allow1620NoNo
18334736NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZEJune 2023April 2025Allow2220YesYes
18321747METHODS AND DEVICES FOR GROWING CRYSTALS WITH HIGH UNIFORMITY WITHOUT ANNEALINGMay 2023November 2024Allow1810NoNo
18124685FILM DEPOSITION METHODMarch 2023May 2025Allow2610NoNo
18117981METHOD AND APPARATUS FOR MANUFACTURING DEFECT-FREE MONOCRYSTALLINE SILICON CRYSTALMarch 2023June 2025Allow2800NoNo
18111091APPARATUS AND METHOD FOR MANUFACTURING HEXAGONAL CRYSTALSFebruary 2023December 2024Allow2201NoNo
18108461MANUFACTURE AND REPAIR OF HIGH TEMPERATURE REINFORCED SUPERCONDUCTORSFebruary 2023January 2025Allow2410YesNo
18149038METHOD FOR CRYSTAL PULLINGDecember 2022January 2025Allow2510NoNo
18012639PRE-HEAT RING AND SUBSTRATE PROCESSING DEVICEDecember 2022December 2024Allow2310NoNo
18012563Crystal Growing Unit for Producing a Single CrystalDecember 2022June 2025Allow3030NoNo
18011422SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFERDecember 2022April 2025Allow2811NoNo
17927810APPARATUS FOR HEATING MULTIPLE CRUCIBLESNovember 2022March 2025Allow2820NoNo
17988326FABRICATION OF PBSE NANOSTRUCTURES BY EMPLOYING CHEMICAL BATH DEPOSITION (CBD) FOR PHOTONICS APPLICATIONSNovember 2022September 2024Allow3301NoNo
18051566FILM DEPOSITION METHOD AND METHOD FOR FORMING POLYCRYSTALLINE SILICON FILMNovember 2022March 2025Allow2940NoNo
17968981PREPARATION METHOD FOR SEMICONDUCTOR STRUCTUREOctober 2022September 2024Allow2310NoNo
18046950Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022August 2024Allow2220NoNo
18046946Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022September 2023Allow1110NoNo
18046945Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022July 2023Allow920NoNo
18046944OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SITU SUBSTRATE PRETREATMENTOctober 2022August 2023Allow1010NoNo
18046943OPTIMIZED THICK HETEROEPITAXIAL GROWTH OF SEMICONDUCTORS WITH IN-SITU SUBSTRATE PRETREATMENTOctober 2022August 2023Allow1010NoNo
18046953Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022August 2024Allow2220YesNo
18046529Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022January 2024Abandon1510NoNo
17964303USE OF ARRAYS OF QUARTZ PARTICLES DURING SINGLE CRYSTAL SILICON INGOT PRODUCTIONOctober 2022May 2025Allow3130NoNo
17937787Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022July 2023Allow1020NoNo
17937862Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022March 2024Abandon1730NoNo
17937827Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022March 2024Abandon1830NoNo
17937791Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022December 2023Abandon1420NoNo
17937840Optimized Heteroepitaxial Growth of SemiconductorsOctober 2022December 2023Abandon1420NoNo
17796902FUSED QUARTZ CRUCIBLE FOR PRODUCING SILICON CRYSTALS, AND METHOD FOR PRODUCING A FUSED QUARTZ CRUCIBLEAugust 2022October 2024Allow2610NoNo
17791633Crystal Support and Crystal Growing Plant Having Such a Crystal SupportJuly 2022December 2024Allow2920NoNo
17858915PRODUCTION AND USE OF DYNAMIC STATE CHARTS WHEN GROWING A SINGLE CRYSTAL SILICON INGOTJuly 2022August 2023Allow1420YesNo
17841243GALLIUM ARSENIDE SINGLE CRYSTAL AND PREPARATION METHOD THEREOFJune 2022February 2023Allow811YesNo
17784742METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL OF SILICON, WHICH SINGLE CRYSTAL IS DOPED WITH N-TYPE DOPANTJune 2022June 2024Allow2410NoNo
17752439JANUS TRANSITION METAL DICHALCOGENIDE THIN FILM AND METHOD OF FABRICATING THE SAMEMay 2022June 2025Allow3710NoNo
17778835SYNTHETIC SINGLE CRYSTAL DIAMOND, TOOL INCLUDING THE SAME AND METHOD OF PRODUCING SYNTHETIC SINGLE CRYSTAL DIAMONDMay 2022December 2024Allow3111YesNo
17663694METHODS FOR LOW ENERGY INORGANIC MATERIAL SYNTHESISMay 2022June 2025Allow3710NoNo
17734511CONTAINER MADE OF SICMay 2022March 2024Abandon2330NoNo
17734578MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATEMay 2022March 2025Allow3450YesNo
17661052Optimized Heteroepitaxial Growth of SemiconductorsApril 2022January 2023Allow910NoNo
17730742METHODS FOR PRODUCING SILICON INGOTS BY HORIZONTAL MAGNETIC FIELD CZOCHRALSKIApril 2022September 2024Abandon2930NoNo
17771880METHOD AND APPARATUS FOR PULLING SINGLE CRYSTALApril 2022June 2024Allow2610NoNo
17771888A METHOD FOR GROWING HIGH-QUALITY HETEROEPITAXIAL MONOCLINIC GALLIUM OXIDE CRYSTALApril 2022June 2024Allow2510NoNo
17728902NON-POLAR III-NITRIDE BINARY AND TERNARY MATERIALS, METHOD FOR OBTAINING THEREOF AND USESApril 2022September 2024Allow2901NoNo
17721475GRAPHENE COMPOSITE AND METHOD FOR MANUFACTURING THE SAMEApril 2022July 2024Abandon2730NoNo
17716487DYNAMIC BALANCING SEED LIFTApril 2022September 2024Abandon3001NoNo
17766467METHOD FOR PRODUCING GALLIUM PRECURSOR AND METHOD FOR PRODUCING LAMINATED BODY USING THE SAMEApril 2022September 2024Allow2910NoNo
17675708CRYSTAL GROWING ASSEMBLY WITH COMBINATION LIFT ARM AND WINCHFebruary 2022March 2025Abandon3710NoNo
17668686Method for producing stable-phase crystals using physical grindingFebruary 2022April 2025Allow3830NoNo
17648423METHOD FOR PREPARING LARGE-SIZE TWO-DIMENSIONAL LAYERED METAL THIOPHOSPHATE CRYSTALJanuary 2022August 2023Allow1810NoNo
17578573METHOD AND APPARATUS FOR GROWING SILICON SINGLE CRYSTAL INGOTJanuary 2022November 2023Allow2210NoNo
17572851SEED LIFTING AND ROTATING SYSTEM FOR USE IN CRYSTAL GROWTHJanuary 2022July 2023Allow1810NoNo
17570517ARTIFICIAL DIAMOND PLASMA PRODUCTION DEVICEJanuary 2022July 2024Allow3000NoNo
17625268METHOD FOR PULLING A SINGLE CRYSTAL OF SILICON IN ACCORDANCE WITH THE CZOCHRALSKI METHODJanuary 2022March 2025Allow3930NoNo
17570146INGOT PULLER APPARATUS HAVING A FLANGE THAT EXTENDS FROM THE FUNNEL OR FROM THE SILICON FEED TUBEJanuary 2022March 2024Allow2730NoNo
17646989Continuous Replenishment Crystal GrowthJanuary 2022March 2023Allow1510NoNo
17610890Thin Plate-Shaped Single-Crystal Production Equipment and Thin Plate-Shaped Single-Crystal Production MethodNovember 2021November 2023Allow2410NoNo
17608627METHOD AND CRUCIBLE FOR PRODUCING PARTICLE-FREE AND NITROGEN-FREE SILICON INGOTS BY MEANS OF TARGETED SOLIDIFICATION, SILICON INGOT, AND THE USE OF THE CRUCIBLENovember 2021June 2025Abandon4420YesNo
17516326INTEGRATED EPITAXY AND PRECLEAN SYSTEMNovember 2021June 2024Allow3230YesYes
17510529NOZZLE EXIT CONTOURS FOR PATTERN COMPOSITIONOctober 2021December 2023Allow2610NoNo
17606193DEPOSITION PROCESS USING ADDITIONAL CHLORIDE-BASED PRECURSORSOctober 2021March 2024Abandon2820NoNo
17502615SUBSTRATE PROCESSING APPARATUSOctober 2021November 2024Allow3730NoNo
17496867IMPURITY CONTROL DURING FORMATION OF ALUMINUM NITRIDE CRYSTALS AND THERMAL TREATMENT OF ALUMINUM NITRIDE CRYSTALSOctober 2021December 2023Allow2621YesYes
17469031ACTIVE BALANCING SEED LIFTSeptember 2021September 2024Abandon3701NoNo
17310565LINEAR SHOWERHEAD FOR GROWING GANAugust 2021April 2024Allow3210NoNo
17310315Method for Pulling a Cylindrical Crystal From a MeltJuly 2021January 2024Allow2920NoNo
17424081Method of Growing Single Crystal Diamond Assisted by Polycrystalline Diamond GrowthJuly 2021May 2023Allow2250YesNo
17338510MODULAR MICROWAVE SOURCE WITH LOCAL LORENTZ FORCEJune 2021March 2023Allow2210NoNo
17338152SPOOL-BALANCED SEED LIFTJune 2021November 2023Allow2910NoNo
17299695SINGLE-CRYSTAL GROWING CRUCIBLE, SINGLE-CRYSTAL PRODUCTION METHOD AND SINGLE CRYSTALJune 2021November 2023Allow3020NoNo
17333957RAW MATERIAL FEED HOPPER AND SINGLE CRYSTAL GROWTH SYSTEMMay 2021March 2024Allow3330NoNo
17329129HVPE APPARATUS AND METHODS FOR GROWING INDIUM NITRIDE AND INDIUM NITRIDE MATERIALS AND STRUCTURES GROWN THEREBYMay 2021January 2023Allow2010NoNo
17296217CRYSTAL GROWTH APPARATUSMay 2021June 2024Allow3740NoNo
17291572SIC SEMICONDUCTOR SUBSTRATE, AND, PRODUCTION METHOD THEREFOR AND PRODUCTION DEVICE THEREFORMay 2021November 2024Allow4211YesNo
17306239LOW-DISLOCATION BULK GAN CRYSTAL AND METHOD OF FABRICATING SAMEMay 2021August 2023Allow2710NoNo
17240349CRUCIBLE AND CRYSTAL GROWTH EQUIPMENTApril 2021November 2023Abandon3120YesNo
17233845CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAMEApril 2021December 2023Allow3230YesNo
17284936METHOD FOR MANUFACTURING A SINGLE CRYSTAL BY SOLUTION GROWTH ENABLING TRAPPING OF PARASITIC CRYSTALSApril 2021December 2023Allow3200NoNo
17227256METHODS AND SYSTEMS FOR CONTROLLING CRYSTAL GROWTHApril 2021August 2024Allow4120NoNo
17227264METHODS AND DEVICES FOR GROWING SCINTILLATION CRYSTALS WITH MULTI-COMPONENT GARNET STRUCTUREApril 2021July 2024Allow3930NoNo
17283158METHOD FOR HEAT-TREATING SILICON WAFERApril 2021May 2025Allow4940NoNo
17222112Method of Producing a Single-CrystalApril 2021September 2023Abandon3020NoNo
17216659METHODS AND DEVICES FOR GROWING CRYSTALS WITH HIGH UNIFORMITY WITHOUT ANNEALINGMarch 2021April 2023Allow2411NoNo
17279623DEVICE FOR PULLING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL OUT OF A MELT USING THE CZ METHOD, AND METHOD USING THE DEVICEMarch 2021November 2022Allow2020NoNo
17277742HIGH PRESSURE SPATIAL CHEMICAL VAPOR DEPOSITION SYSTEM AND RELATED PROCESSMarch 2021September 2023Allow3010YesNo
17199645NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZEMarch 2021June 2023Allow2711NoNo
17191739CRYSTALS FOR DETECTING NEUTRONS, GAMMA RAYS, AND X RAYS AND PREPARATION METHODS THEREOFMarch 2021February 2024Allow3530NoNo
17191743CRYSTALS FOR DETECTING NEUTRONS, GAMMA RAYS, AND X RAYS AND PREPARATION METHODS THEREOFMarch 2021March 2024Allow3740NoNo
17183753GALLIUM OXIDE CRYSTAL MANUFACTURING DEVICEFebruary 2021February 2023Allow2310NoNo
17163714VAPOR PHASE GROWTH APPARATUSFebruary 2021March 2025Abandon4940YesNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner SONG, MATTHEW J.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
27
Examiner Affirmed
17
(63.0%)
Examiner Reversed
10
(37.0%)
Reversal Percentile
57.3%
Higher than average

What This Means

With a 37.0% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.

Strategic Value of Filing an Appeal

Total Appeal Filings
66
Allowed After Appeal Filing
16
(24.2%)
Not Allowed After Appeal Filing
50
(75.8%)
Filing Benefit Percentile
29.5%
Lower than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 24.2% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is below the USPTO average, suggesting that filing an appeal has limited effectiveness in prompting favorable reconsideration.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal shows limited benefit. Consider other strategies like interviews or amendments before appealing.

Examiner SONG, MATTHEW J - Prosecution Strategy Guide

Executive Summary

Examiner SONG, MATTHEW J works in Art Unit 1714 and has examined 829 patent applications in our dataset. With an allowance rate of 61.6%, this examiner allows applications at a lower rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 39 months.

Allowance Patterns

Examiner SONG, MATTHEW J's allowance rate of 61.6% places them in the 15% percentile among all USPTO examiners. This examiner is less likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by SONG, MATTHEW J receive 2.37 office actions before reaching final disposition. This places the examiner in the 81% percentile for office actions issued. This examiner issues more office actions than most examiners, which may indicate thorough examination or difficulty in reaching agreement with applicants.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by SONG, MATTHEW J is 39 months. This places the examiner in the 9% percentile for prosecution speed. Applications take longer to reach final disposition with this examiner compared to most others.

Interview Effectiveness

Conducting an examiner interview provides a +13.8% benefit to allowance rate for applications examined by SONG, MATTHEW J. This interview benefit is in the 56% percentile among all examiners. Recommendation: Interviews provide an above-average benefit with this examiner and are worth considering.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 20.6% of applications are subsequently allowed. This success rate is in the 15% percentile among all examiners. Strategic Insight: RCEs show lower effectiveness with this examiner compared to others. Consider whether a continuation application might be more strategic, especially if you need to add new matter or significantly broaden claims.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 25.1% of cases where such amendments are filed. This entry rate is in the 26% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 40.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 34% percentile among all examiners. Note: Pre-appeal conferences show below-average success with this examiner. Consider whether your arguments are strong enough to warrant a PAC request.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 53.4% of appeals filed. This is in the 19% percentile among all examiners. Of these withdrawals, 38.7% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner rarely withdraws rejections during the appeal process compared to other examiners. If you file an appeal, be prepared to fully prosecute it to a PTAB decision. Per MPEP § 1207, the examiner will prepare an Examiner's Answer maintaining the rejections.

Petition Practice

When applicants file petitions regarding this examiner's actions, 62.2% are granted (fully or in part). This grant rate is in the 79% percentile among all examiners. Strategic Note: Petitions are frequently granted regarding this examiner's actions compared to other examiners. Per MPEP § 1002.02(c), various examiner actions are petitionable to the Technology Center Director, including prematureness of final rejection, refusal to enter amendments, and requirement for information. If you believe an examiner action is improper, consider filing a petition.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 1.8% of allowed cases (in the 76% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.0% of allowed cases (in the 4% percentile). This examiner rarely issues Quayle actions compared to other examiners. Allowances typically come directly without a separate action for formal matters.

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Prepare for rigorous examination: With a below-average allowance rate, ensure your application has strong written description and enablement support. Consider filing a continuation if you need to add new matter.
  • Expect multiple rounds of prosecution: This examiner issues more office actions than average. Address potential issues proactively in your initial response and consider requesting an interview early in prosecution.
  • Plan for extended prosecution: Applications take longer than average with this examiner. Factor this into your continuation strategy and client communications.
  • Examiner cooperation: This examiner frequently makes examiner's amendments to place applications in condition for allowance. If you are close to allowance, the examiner may help finalize the claims.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.