USPTO Examiner QI HUA - Art Unit 1714

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
18696822Heater Assembly and Single Crystal PullerMarch 2024November 2024Allow810NoNo
18443722INFRARED TRANSMISSIVITY MEASUREMENT METHOD OF QUARTZ GLASS CRUCIBLEFebruary 2024June 2025Allow1620NoNo
18376281METHOD FOR PRODUCING SILICON SINGLE CRYSTALOctober 2023July 2024Allow1010NoNo
18355469GRADED TIP CUPROUS OXIDE SINGLE CRYSTAL MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOFJuly 2023June 2025Abandon2220NoNo
18326342FINS ON CRUCIBLE OR GUSSETS ON REFRACTORY LINING FOR FACILITATING EXCLUSION OF IMPURITIES FROM A BOULEMay 2023May 2025Allow2351YesNo
18326374ASYMMETRIC THERMAL FIELDS FOR EXCLUDING IMPURITIES IN SINGLE CRYSTAL MANUFACTURING DEVICEMay 2023July 2024Allow1431YesNo
18325142APPARATUS FOR PRODUCING SI INGOT SINGLE CRYSTALMay 2023April 2024Allow1110YesNo
18202024N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SINGLE CRYSTAL INGOT, SILICON WAFER, AND EPITAXIAL SILICON WAFERMay 2023November 2024Allow1720NoYes
18028609INGOT GROWTH APPARATUSMarch 2023May 2025Allow2610NoNo
18026975PRODUCTION METHOD FOR SILICON MONOCRYSTALMarch 2023April 2025Allow2511NoNo
18112750VAPOR PHASE EPITAXIAL GROWTH DEVICEFebruary 2023February 2024Allow1210NoNo
18154418DETERMINATION OF MASS/TIME RATIOS FOR BUFFER MEMBERS USED DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTSJanuary 2023June 2024Allow1720NoNo
18151989METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANTJanuary 2023May 2025Allow2850NoNo
18151992INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANTJanuary 2023September 2024Allow2140YesNo
18150052CRYSTAL PULLING SYSTEMS HAVING A COVER MEMBER FOR COVERING THE SILICON CHARGEJanuary 2023September 2024Allow2130NoNo
17991406INGOT PULLER APPARATUS HAVING HEAT SHIELDS WITH FEET HAVING AN APEXNovember 2022March 2024Allow1630NoNo
17910178CRYSTAL GROWTH APPARATUS WITH MOVABLE SEED FIXTURESeptember 2022April 2025Allow3121NoNo
17939192SINGLE CRYSTAL GROWTH SUSCEPTOR ASSEMBLY WITH SACRIFICE RINGSeptember 2022December 2024Allow2711NoNo
17939152METHOD FOR PRODUCING SIC SINGLE CRYSTAL AND METHOD FOR SUPPRESSING DISLOCATIONS IN SIC SINGLE CRYSTALSeptember 2022November 2024Allow2620NoNo
17899479QUARTZ GLASS CRUCIBLEAugust 2022February 2025Allow2900NoNo
17817838MONOCRYSTAL GROWTH METHOD AND MONOCRYSTAL GROWTH DEVICEAugust 2022April 2024Allow2031NoNo
17815219DEVICES AND METHODS FOR GROWING CRYSTALSJuly 2022May 2025Abandon3420YesNo
17846266ALPHA-PHASE NICKEL HYDROXIDE AND PREPARATION METHOD AND USE THEREOFJune 2022September 2024Allow2611NoNo
17783616QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREOFJune 2022May 2025Allow3521NoNo
17831271USE OF QUARTZ PLATES DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTSJune 2022August 2024Allow2620NoNo
17605399SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHODMay 2022October 2024Allow3620YesNo
17771054RAW MATERIAL SUPPLY UNIT, SINGLE-CRYSTAL SILICON INGOT GROWING APPARATUS COMPRISING SAME AND RAW MATERIAL SUPPLY METHODApril 2022June 2024Allow2611NoNo
17771048RAW MATERIAL SUPPLY UNIT, AND APPARATUS COMPRISING SAME FOR GROWING SINGLE-CRYSTAL SILICON INGOTApril 2022October 2024Allow3021NoNo
17658049SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELDApril 2022September 2023Allow1720YesNo
17711691METHODS FOR FORMING A SILICON SUBSTRATE WITH REDUCED GROWN-IN NUCLEI FOR EPITAXIAL DEFECTS AND METHODS FOR FORMING AN EPITAXIAL WAFERApril 2022January 2024Allow2230NoNo
17707957HEAT EXCHANGE DEVICE FOR SINGLE CRYSTAL FURNACEMarch 2022March 2025Abandon3520NoNo
17579604METHOD FOR ADJUSTING THERMAL FIELD OF SILICON CARBIDE SINGLE CRYSTAL GROWTHJanuary 2022April 2024Abandon2720NoNo
17577797SINGLE CRYSTAL CATHODE MATERIALS USING MICROWAVE PLASMA PROCESSINGJanuary 2022May 2025Abandon4021NoNo
17566656CZOCHRALSKI SINGLE CRYSTAL FURNACE FOR PREPARING MONOCRYSTALLINE SILICON AND METHOD FOR PREPARING MONOCRYSTALLINE SILICONDecember 2021November 2024Allow3411NoNo
17563853GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALDecember 2021August 2024Abandon3111NoNo
17553031USE OF BUFFER MEMBERS DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTSDecember 2021June 2023Allow1811YesNo
17547760DEVICE FOR MANUFACTURING MONOCRYSTALLINE SILICON AND COOLING METHOD THEREOFDecember 2021March 2024Allow2731NoNo
17537521METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELDNovember 2021October 2023Abandon2320NoNo
17535787METHOD FOR MANUFACTURING CRYSTAL FOR SYNTHETIC GEMNovember 2021June 2023Allow1920YesNo
17610508EXPOSURE OF A SILICON RIBBON TO GAS IN A FURNACENovember 2021May 2023Abandon1821NoNo
17520815DEVICES AND METHODS FOR GROWING CRYSTALSNovember 2021June 2022Allow711NoNo
17603928Single Crystal Pulling Apparatus Hot-Zone Structure, Single Crystal Pulling Apparatus and Crystal IngotOctober 2021November 2024Allow3721NoNo
17496547CRYSTAL PULLING SYSTEMS HAVING FLUID-FILLED EXHAUST TUBES THAT EXTEND THROUGH THE HOUSINGOctober 2021January 2024Allow2730NoNo
17496535INGOT PULLER APPARATUS HAVING HEAT SHIELDS WITH VOIDS THEREINOctober 2021October 2023Allow2531YesNo
17601821BIOPOLYMER CONCENTRATION METHOD, CRYSTALLIZATION METHOD, AND NANOSTRUCTURED SUBSTRATEOctober 2021July 2024Allow3311NoNo
17485144QUARTZ GLASS CRUCIBLESeptember 2021October 2024Abandon3610NoNo
17447742SiC Single Crystal Sublimation Growth ApparatusSeptember 2021May 2023Allow2010NoNo
17435275METHOD FOR MEASURING RESISTIVITY OF SILICON SINGLE CRYSTALAugust 2021October 2024Abandon3710NoNo
17411851SUBSTRATES FOR III-NITRIDE EPITAXYAugust 2021February 2025Allow4231YesNo
17411025OPTIMIZING GROWTH METHOD FOR IMPROVING QUALITY OF MOCVD EPITAXIAL THIN FILMSAugust 2021March 2025Abandon4321NoNo
17408727SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBYAugust 2021February 2022Allow611NoNo
17396370CRYSTAL PULLING SYSTEMS HAVING A COVER MEMBER FOR COVERING THE SILICON CHARGE AND METHODS FOR GROWING A MELT OF SILICON IN A CRUCIBLE ASSEMBLYAugust 2021November 2024Allow3951NoNo
17385935MANUFACTURING METHOD OF SILICON CARBIDE INGOTJuly 2021October 2023Allow2730NoNo
17378251CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTSJuly 2021October 2023Abandon2720YesNo
17372533MONO-CRYSTALLINE SILICON GROWTH APPARATUSJuly 2021May 2023Allow2220YesNo
17417496VAPOR DEPOSITION DEVICE AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFERJune 2021August 2023Allow2510YesNo
17413929QUARTZ GLASS CRUCIBLE, MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL USING THE SAME, AND INFRARED TRANSMISSIVITY MEASUREMENT METHOD AND MANUFACTURING METHOD OF QUARTZ GLASS CRUCIBLEJune 2021January 2024Allow3111YesNo
17324108METHOD FOR PRODUCING SI INGOT SINGLE CRYSTAL, SI INGOT SINGLE CRYSTAL, AND APPARATUS THEREOFMay 2021April 2024Allow3521NoNo
17292192NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND LAMINATED STRUCTUREMay 2021June 2025Allow5031YesNo
17242625HEAT SHIELD DEVICE FOR LOW OXYGEN SINGLE CRYSTAL GROWTH OF SINGLE CRYSTAL INGOT GROWTH DEVICEApril 2021July 2023Abandon2721NoNo
17212726SIC CRYSTAL GROWTH DEVICE AND METHODMarch 2021February 2024Abandon3521NoNo
17196288CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUSMarch 2021June 2023Abandon2721YesNo
17249597LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOFMarch 2021October 2023Allow3121YesNo
17186232METHODS AND DEVICES FOR GROWING OXIDE CRYSTALS IN OXYGEN ATMOSPHEREFebruary 2021June 2024Abandon4030NoNo
17181201QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENCAPSULATING LAYERFebruary 2021November 2024Abandon4421NoNo
17269197METHOD FOR GROWING SINGLE CRYSTALFebruary 2021December 2023Abandon3430YesNo
17267283QUARTZ GLASS CRUCIBLEFebruary 2021August 2023Allow3120YesNo
17139367SYSTEMS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANTDecember 2020June 2023Allow2911NoNo
17139352METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANTDecember 2020August 2023Allow3211NoNo
17139207HEAT SHIELD DEVICE AND SMELTING FURNACEDecember 2020November 2023Abandon3420NoNo
17139942HEAT SHIELD DEVICE FOR INSULATING HEAT AND SMELTING FURNACEDecember 2020March 2024Abandon3920NoNo
17139990HEAT SHIELD DEVICE FOR SINGLE CRYSTAL PRODUCTION FURNACE, CONTROL METHOD THEREOF AND SINGLE CRYSTAL PRODUCTION FURNACEDecember 2020April 2024Abandon3921NoNo
17137387THIN-FILM HEAT INSULATION SHEET FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACEDecember 2020August 2023Abandon3220NoNo
17138842COMPOSITE HEAT INSULATION STRUCTURE FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACEDecember 2020September 2023Abandon3320NoNo
17137339HEAT SHIELD FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACEDecember 2020April 2023Abandon2720NoNo
17256327METHOD AND DEVICE FOR CONTROLLING CONSTANT-DIAMETER GROWTH OF MONOCRYSTAL SILICON AND STORAGE MEDIUMDecember 2020December 2023Abandon3621NoNo
17126657Single Crystal FurnaceDecember 2020September 2023Allow3230NoNo
17126580METHOD FOR MANUFACTURING A LAYER OF TEXTURED ALUMINUM NITRIDEDecember 2020April 2025Allow5221NoNo
17253685SILICON CARBIDE SINGLE CRYSTAL GROWTH APPARATUS AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTALDecember 2020December 2023Abandon3641NoNo
17125590METHODS FOR FORMING A SILICON SUBSTRATE WITH REDUCED GROWN-IN NUCLEI FOR EPITAXIAL DEFECTS AND METHODS FOR FORMING AN EPITAXIAL WAFERDecember 2020January 2024Allow3751NoNo
17115154SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELDDecember 2020September 2023Allow3341YesNo
17107103APPARATUS FOR PRODUCING BULK SILICON CARBIDENovember 2020October 2022Allow2210YesNo
16969134QUARTZ GLASS CRUCIBLENovember 2020July 2022Allow2311NoNo
17071714METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RESISTIVITY CONTROLOctober 2020March 2024Allow4170NoNo
17067040METHOD FOR PRODUCING BULK SILICON CARBIDEOctober 2020July 2022Allow2110NoNo
17061911SEMICONDUCTOR CRYSTAL GROWTH APPARATUSOctober 2020October 2022Abandon2420NoNo
17061882SEMICONDUCTOR CRYSTAL GROWTH APPARATUSOctober 2020October 2022Abandon2420NoNo
17060585CRYSTALLIZATION OF AMORPHOUS MULTICOMPONENT IONIC COMPOUNDSOctober 2020October 2022Allow2521NoNo
17039060SEED CRYSTAL HOLDER FOR PULLING UP SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL USING THE SAMESeptember 2020April 2022Allow1920YesNo
17030727WAFER CARRIER AND METHODSeptember 2020August 2022Allow2221YesNo
16981343METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTALSeptember 2020August 2023Abandon3541YesNo
17021691METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEEDSeptember 2020April 2022Allow1910NoNo
17016443CRYSTAL GROWTH APPARATUSSeptember 2020April 2022Abandon1910NoNo
16978813METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTALSeptember 2020January 2023Abandon2820NoNo
17005891METHOD AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE SILICONAugust 2020March 2023Allow3140YesNo
16971441METHOD FOR CONTROLLING CONVECTION PATTERN OF SILICON MELT, METHOD FOR PRODUCING SILICON SINGLE CRYSTALS, AND DEVICE FOR PULLING SILICON SINGLE CRYSTALSAugust 2020July 2023Allow3551YesNo
16971155METHOD OF ESTIMATING OXYGEN CONCENTRATION OF SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTALAugust 2020August 2022Allow2421NoNo
16943892CRUCIBLE FOR INGOT GROWERJuly 2020January 2023Allow2930YesNo
16904563SEMICONDUCTOR CRYSTAL GROWTH APPARATUSJune 2020April 2022Abandon2110NoNo
16904561SEMICONDUCTOR CRYSTAL GROWTH APPARATUSJune 2020April 2022Abandon2110NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner QI, HUA.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
12
Examiner Affirmed
7
(58.3%)
Examiner Reversed
5
(41.7%)
Reversal Percentile
63.2%
Higher than average

What This Means

With a 41.7% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.

Strategic Value of Filing an Appeal

Total Appeal Filings
39
Allowed After Appeal Filing
14
(35.9%)
Not Allowed After Appeal Filing
25
(64.1%)
Filing Benefit Percentile
56.3%
Higher than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 35.9% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is above the USPTO average, suggesting that filing an appeal can be an effective strategy for prompting reconsideration.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Examiner QI, HUA - Prosecution Strategy Guide

Executive Summary

Examiner QI, HUA works in Art Unit 1714 and has examined 509 patent applications in our dataset. With an allowance rate of 51.5%, this examiner allows applications at a lower rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 37 months.

Allowance Patterns

Examiner QI, HUA's allowance rate of 51.5% places them in the 8% percentile among all USPTO examiners. This examiner is less likely to allow applications than most examiners at the USPTO.

Office Action Patterns

On average, applications examined by QI, HUA receive 2.68 office actions before reaching final disposition. This places the examiner in the 90% percentile for office actions issued. This examiner issues more office actions than most examiners, which may indicate thorough examination or difficulty in reaching agreement with applicants.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by QI, HUA is 37 months. This places the examiner in the 13% percentile for prosecution speed. Applications take longer to reach final disposition with this examiner compared to most others.

Interview Effectiveness

Conducting an examiner interview provides a +28.5% benefit to allowance rate for applications examined by QI, HUA. This interview benefit is in the 79% percentile among all examiners. Recommendation: Interviews are highly effective with this examiner and should be strongly considered as a prosecution strategy. Per MPEP § 713.10, interviews are available at any time before the Notice of Allowance is mailed or jurisdiction transfers to the PTAB.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 19.2% of applications are subsequently allowed. This success rate is in the 12% percentile among all examiners. Strategic Insight: RCEs show lower effectiveness with this examiner compared to others. Consider whether a continuation application might be more strategic, especially if you need to add new matter or significantly broaden claims.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 21.1% of cases where such amendments are filed. This entry rate is in the 19% percentile among all examiners. Strategic Recommendation: This examiner rarely enters after-final amendments compared to other examiners. You should generally plan to file an RCE or appeal rather than relying on after-final amendment entry. Per MPEP § 714.12, primary examiners have discretion in entering after-final amendments, and this examiner exercises that discretion conservatively.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 66.7% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 50% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences show above-average effectiveness with this examiner. If you have strong arguments, a PAC request may result in favorable reconsideration.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 67.6% of appeals filed. This is in the 48% percentile among all examiners. Of these withdrawals, 48.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows below-average willingness to reconsider rejections during appeals. Be prepared to fully prosecute appeals if filed.

Petition Practice

When applicants file petitions regarding this examiner's actions, 63.8% are granted (fully or in part). This grant rate is in the 81% percentile among all examiners. Strategic Note: Petitions are frequently granted regarding this examiner's actions compared to other examiners. Per MPEP § 1002.02(c), various examiner actions are petitionable to the Technology Center Director, including prematureness of final rejection, refusal to enter amendments, and requirement for information. If you believe an examiner action is improper, consider filing a petition.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 0.0% of allowed cases (in the 3% percentile). This examiner rarely makes examiner's amendments compared to other examiners. You should expect to make all necessary claim amendments yourself through formal amendment practice.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.8% of allowed cases (in the 53% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Prepare for rigorous examination: With a below-average allowance rate, ensure your application has strong written description and enablement support. Consider filing a continuation if you need to add new matter.
  • Expect multiple rounds of prosecution: This examiner issues more office actions than average. Address potential issues proactively in your initial response and consider requesting an interview early in prosecution.
  • Prioritize examiner interviews: Interviews are highly effective with this examiner. Request an interview after the first office action to clarify issues and potentially expedite allowance.
  • Plan for RCE after final rejection: This examiner rarely enters after-final amendments. Budget for an RCE in your prosecution strategy if you receive a final rejection.
  • Plan for extended prosecution: Applications take longer than average with this examiner. Factor this into your continuation strategy and client communications.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.