Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18696822 | Heater Assembly and Single Crystal Puller | March 2024 | November 2024 | Allow | 8 | 1 | 0 | No | No |
| 18443722 | INFRARED TRANSMISSIVITY MEASUREMENT METHOD OF QUARTZ GLASS CRUCIBLE | February 2024 | June 2025 | Allow | 16 | 2 | 0 | No | No |
| 18376281 | METHOD FOR PRODUCING SILICON SINGLE CRYSTAL | October 2023 | July 2024 | Allow | 10 | 1 | 0 | No | No |
| 18355469 | GRADED TIP CUPROUS OXIDE SINGLE CRYSTAL MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF | July 2023 | June 2025 | Abandon | 22 | 2 | 0 | No | No |
| 18326342 | FINS ON CRUCIBLE OR GUSSETS ON REFRACTORY LINING FOR FACILITATING EXCLUSION OF IMPURITIES FROM A BOULE | May 2023 | May 2025 | Allow | 23 | 5 | 1 | Yes | No |
| 18326374 | ASYMMETRIC THERMAL FIELDS FOR EXCLUDING IMPURITIES IN SINGLE CRYSTAL MANUFACTURING DEVICE | May 2023 | July 2024 | Allow | 14 | 3 | 1 | Yes | No |
| 18325142 | APPARATUS FOR PRODUCING SI INGOT SINGLE CRYSTAL | May 2023 | April 2024 | Allow | 11 | 1 | 0 | Yes | No |
| 18202024 | N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SINGLE CRYSTAL INGOT, SILICON WAFER, AND EPITAXIAL SILICON WAFER | May 2023 | November 2024 | Allow | 17 | 2 | 0 | No | Yes |
| 18028609 | INGOT GROWTH APPARATUS | March 2023 | May 2025 | Allow | 26 | 1 | 0 | No | No |
| 18026975 | PRODUCTION METHOD FOR SILICON MONOCRYSTAL | March 2023 | April 2025 | Allow | 25 | 1 | 1 | No | No |
| 18112750 | VAPOR PHASE EPITAXIAL GROWTH DEVICE | February 2023 | February 2024 | Allow | 12 | 1 | 0 | No | No |
| 18154418 | DETERMINATION OF MASS/TIME RATIOS FOR BUFFER MEMBERS USED DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTS | January 2023 | June 2024 | Allow | 17 | 2 | 0 | No | No |
| 18151989 | METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT | January 2023 | May 2025 | Allow | 28 | 5 | 0 | No | No |
| 18151992 | INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANT | January 2023 | September 2024 | Allow | 21 | 4 | 0 | Yes | No |
| 18150052 | CRYSTAL PULLING SYSTEMS HAVING A COVER MEMBER FOR COVERING THE SILICON CHARGE | January 2023 | September 2024 | Allow | 21 | 3 | 0 | No | No |
| 17991406 | INGOT PULLER APPARATUS HAVING HEAT SHIELDS WITH FEET HAVING AN APEX | November 2022 | March 2024 | Allow | 16 | 3 | 0 | No | No |
| 17910178 | CRYSTAL GROWTH APPARATUS WITH MOVABLE SEED FIXTURE | September 2022 | April 2025 | Allow | 31 | 2 | 1 | No | No |
| 17939192 | SINGLE CRYSTAL GROWTH SUSCEPTOR ASSEMBLY WITH SACRIFICE RING | September 2022 | December 2024 | Allow | 27 | 1 | 1 | No | No |
| 17939152 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL AND METHOD FOR SUPPRESSING DISLOCATIONS IN SIC SINGLE CRYSTAL | September 2022 | November 2024 | Allow | 26 | 2 | 0 | No | No |
| 17899479 | QUARTZ GLASS CRUCIBLE | August 2022 | February 2025 | Allow | 29 | 0 | 0 | No | No |
| 17817838 | MONOCRYSTAL GROWTH METHOD AND MONOCRYSTAL GROWTH DEVICE | August 2022 | April 2024 | Allow | 20 | 3 | 1 | No | No |
| 17815219 | DEVICES AND METHODS FOR GROWING CRYSTALS | July 2022 | May 2025 | Abandon | 34 | 2 | 0 | Yes | No |
| 17846266 | ALPHA-PHASE NICKEL HYDROXIDE AND PREPARATION METHOD AND USE THEREOF | June 2022 | September 2024 | Allow | 26 | 1 | 1 | No | No |
| 17783616 | QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREOF | June 2022 | May 2025 | Allow | 35 | 2 | 1 | No | No |
| 17831271 | USE OF QUARTZ PLATES DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTS | June 2022 | August 2024 | Allow | 26 | 2 | 0 | No | No |
| 17605399 | SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD | May 2022 | October 2024 | Allow | 36 | 2 | 0 | Yes | No |
| 17771054 | RAW MATERIAL SUPPLY UNIT, SINGLE-CRYSTAL SILICON INGOT GROWING APPARATUS COMPRISING SAME AND RAW MATERIAL SUPPLY METHOD | April 2022 | June 2024 | Allow | 26 | 1 | 1 | No | No |
| 17771048 | RAW MATERIAL SUPPLY UNIT, AND APPARATUS COMPRISING SAME FOR GROWING SINGLE-CRYSTAL SILICON INGOT | April 2022 | October 2024 | Allow | 30 | 2 | 1 | No | No |
| 17658049 | SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELD | April 2022 | September 2023 | Allow | 17 | 2 | 0 | Yes | No |
| 17711691 | METHODS FOR FORMING A SILICON SUBSTRATE WITH REDUCED GROWN-IN NUCLEI FOR EPITAXIAL DEFECTS AND METHODS FOR FORMING AN EPITAXIAL WAFER | April 2022 | January 2024 | Allow | 22 | 3 | 0 | No | No |
| 17707957 | HEAT EXCHANGE DEVICE FOR SINGLE CRYSTAL FURNACE | March 2022 | March 2025 | Abandon | 35 | 2 | 0 | No | No |
| 17579604 | METHOD FOR ADJUSTING THERMAL FIELD OF SILICON CARBIDE SINGLE CRYSTAL GROWTH | January 2022 | April 2024 | Abandon | 27 | 2 | 0 | No | No |
| 17577797 | SINGLE CRYSTAL CATHODE MATERIALS USING MICROWAVE PLASMA PROCESSING | January 2022 | May 2025 | Abandon | 40 | 2 | 1 | No | No |
| 17566656 | CZOCHRALSKI SINGLE CRYSTAL FURNACE FOR PREPARING MONOCRYSTALLINE SILICON AND METHOD FOR PREPARING MONOCRYSTALLINE SILICON | December 2021 | November 2024 | Allow | 34 | 1 | 1 | No | No |
| 17563853 | GROUP III NITRIDE SUBSTRATE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL | December 2021 | August 2024 | Abandon | 31 | 1 | 1 | No | No |
| 17553031 | USE OF BUFFER MEMBERS DURING GROWTH OF SINGLE CRYSTAL SILICON INGOTS | December 2021 | June 2023 | Allow | 18 | 1 | 1 | Yes | No |
| 17547760 | DEVICE FOR MANUFACTURING MONOCRYSTALLINE SILICON AND COOLING METHOD THEREOF | December 2021 | March 2024 | Allow | 27 | 3 | 1 | No | No |
| 17537521 | METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD | November 2021 | October 2023 | Abandon | 23 | 2 | 0 | No | No |
| 17535787 | METHOD FOR MANUFACTURING CRYSTAL FOR SYNTHETIC GEM | November 2021 | June 2023 | Allow | 19 | 2 | 0 | Yes | No |
| 17610508 | EXPOSURE OF A SILICON RIBBON TO GAS IN A FURNACE | November 2021 | May 2023 | Abandon | 18 | 2 | 1 | No | No |
| 17520815 | DEVICES AND METHODS FOR GROWING CRYSTALS | November 2021 | June 2022 | Allow | 7 | 1 | 1 | No | No |
| 17603928 | Single Crystal Pulling Apparatus Hot-Zone Structure, Single Crystal Pulling Apparatus and Crystal Ingot | October 2021 | November 2024 | Allow | 37 | 2 | 1 | No | No |
| 17496547 | CRYSTAL PULLING SYSTEMS HAVING FLUID-FILLED EXHAUST TUBES THAT EXTEND THROUGH THE HOUSING | October 2021 | January 2024 | Allow | 27 | 3 | 0 | No | No |
| 17496535 | INGOT PULLER APPARATUS HAVING HEAT SHIELDS WITH VOIDS THEREIN | October 2021 | October 2023 | Allow | 25 | 3 | 1 | Yes | No |
| 17601821 | BIOPOLYMER CONCENTRATION METHOD, CRYSTALLIZATION METHOD, AND NANOSTRUCTURED SUBSTRATE | October 2021 | July 2024 | Allow | 33 | 1 | 1 | No | No |
| 17485144 | QUARTZ GLASS CRUCIBLE | September 2021 | October 2024 | Abandon | 36 | 1 | 0 | No | No |
| 17447742 | SiC Single Crystal Sublimation Growth Apparatus | September 2021 | May 2023 | Allow | 20 | 1 | 0 | No | No |
| 17435275 | METHOD FOR MEASURING RESISTIVITY OF SILICON SINGLE CRYSTAL | August 2021 | October 2024 | Abandon | 37 | 1 | 0 | No | No |
| 17411851 | SUBSTRATES FOR III-NITRIDE EPITAXY | August 2021 | February 2025 | Allow | 42 | 3 | 1 | Yes | No |
| 17411025 | OPTIMIZING GROWTH METHOD FOR IMPROVING QUALITY OF MOCVD EPITAXIAL THIN FILMS | August 2021 | March 2025 | Abandon | 43 | 2 | 1 | No | No |
| 17408727 | SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY | August 2021 | February 2022 | Allow | 6 | 1 | 1 | No | No |
| 17396370 | CRYSTAL PULLING SYSTEMS HAVING A COVER MEMBER FOR COVERING THE SILICON CHARGE AND METHODS FOR GROWING A MELT OF SILICON IN A CRUCIBLE ASSEMBLY | August 2021 | November 2024 | Allow | 39 | 5 | 1 | No | No |
| 17385935 | MANUFACTURING METHOD OF SILICON CARBIDE INGOT | July 2021 | October 2023 | Allow | 27 | 3 | 0 | No | No |
| 17378251 | CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS | July 2021 | October 2023 | Abandon | 27 | 2 | 0 | Yes | No |
| 17372533 | MONO-CRYSTALLINE SILICON GROWTH APPARATUS | July 2021 | May 2023 | Allow | 22 | 2 | 0 | Yes | No |
| 17417496 | VAPOR DEPOSITION DEVICE AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER | June 2021 | August 2023 | Allow | 25 | 1 | 0 | Yes | No |
| 17413929 | QUARTZ GLASS CRUCIBLE, MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL USING THE SAME, AND INFRARED TRANSMISSIVITY MEASUREMENT METHOD AND MANUFACTURING METHOD OF QUARTZ GLASS CRUCIBLE | June 2021 | January 2024 | Allow | 31 | 1 | 1 | Yes | No |
| 17324108 | METHOD FOR PRODUCING SI INGOT SINGLE CRYSTAL, SI INGOT SINGLE CRYSTAL, AND APPARATUS THEREOF | May 2021 | April 2024 | Allow | 35 | 2 | 1 | No | No |
| 17292192 | NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND LAMINATED STRUCTURE | May 2021 | June 2025 | Allow | 50 | 3 | 1 | Yes | No |
| 17242625 | HEAT SHIELD DEVICE FOR LOW OXYGEN SINGLE CRYSTAL GROWTH OF SINGLE CRYSTAL INGOT GROWTH DEVICE | April 2021 | July 2023 | Abandon | 27 | 2 | 1 | No | No |
| 17212726 | SIC CRYSTAL GROWTH DEVICE AND METHOD | March 2021 | February 2024 | Abandon | 35 | 2 | 1 | No | No |
| 17196288 | CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS | March 2021 | June 2023 | Abandon | 27 | 2 | 1 | Yes | No |
| 17249597 | LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOF | March 2021 | October 2023 | Allow | 31 | 2 | 1 | Yes | No |
| 17186232 | METHODS AND DEVICES FOR GROWING OXIDE CRYSTALS IN OXYGEN ATMOSPHERE | February 2021 | June 2024 | Abandon | 40 | 3 | 0 | No | No |
| 17181201 | QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENCAPSULATING LAYER | February 2021 | November 2024 | Abandon | 44 | 2 | 1 | No | No |
| 17269197 | METHOD FOR GROWING SINGLE CRYSTAL | February 2021 | December 2023 | Abandon | 34 | 3 | 0 | Yes | No |
| 17267283 | QUARTZ GLASS CRUCIBLE | February 2021 | August 2023 | Allow | 31 | 2 | 0 | Yes | No |
| 17139367 | SYSTEMS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANT | December 2020 | June 2023 | Allow | 29 | 1 | 1 | No | No |
| 17139352 | METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANT | December 2020 | August 2023 | Allow | 32 | 1 | 1 | No | No |
| 17139207 | HEAT SHIELD DEVICE AND SMELTING FURNACE | December 2020 | November 2023 | Abandon | 34 | 2 | 0 | No | No |
| 17139942 | HEAT SHIELD DEVICE FOR INSULATING HEAT AND SMELTING FURNACE | December 2020 | March 2024 | Abandon | 39 | 2 | 0 | No | No |
| 17139990 | HEAT SHIELD DEVICE FOR SINGLE CRYSTAL PRODUCTION FURNACE, CONTROL METHOD THEREOF AND SINGLE CRYSTAL PRODUCTION FURNACE | December 2020 | April 2024 | Abandon | 39 | 2 | 1 | No | No |
| 17137387 | THIN-FILM HEAT INSULATION SHEET FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE | December 2020 | August 2023 | Abandon | 32 | 2 | 0 | No | No |
| 17138842 | COMPOSITE HEAT INSULATION STRUCTURE FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE | December 2020 | September 2023 | Abandon | 33 | 2 | 0 | No | No |
| 17137339 | HEAT SHIELD FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE | December 2020 | April 2023 | Abandon | 27 | 2 | 0 | No | No |
| 17256327 | METHOD AND DEVICE FOR CONTROLLING CONSTANT-DIAMETER GROWTH OF MONOCRYSTAL SILICON AND STORAGE MEDIUM | December 2020 | December 2023 | Abandon | 36 | 2 | 1 | No | No |
| 17126657 | Single Crystal Furnace | December 2020 | September 2023 | Allow | 32 | 3 | 0 | No | No |
| 17126580 | METHOD FOR MANUFACTURING A LAYER OF TEXTURED ALUMINUM NITRIDE | December 2020 | April 2025 | Allow | 52 | 2 | 1 | No | No |
| 17253685 | SILICON CARBIDE SINGLE CRYSTAL GROWTH APPARATUS AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL | December 2020 | December 2023 | Abandon | 36 | 4 | 1 | No | No |
| 17125590 | METHODS FOR FORMING A SILICON SUBSTRATE WITH REDUCED GROWN-IN NUCLEI FOR EPITAXIAL DEFECTS AND METHODS FOR FORMING AN EPITAXIAL WAFER | December 2020 | January 2024 | Allow | 37 | 5 | 1 | No | No |
| 17115154 | SYSTEMS AND METHODS FOR PRODUCTION OF SILICON USING A HORIZONTAL MAGNETIC FIELD | December 2020 | September 2023 | Allow | 33 | 4 | 1 | Yes | No |
| 17107103 | APPARATUS FOR PRODUCING BULK SILICON CARBIDE | November 2020 | October 2022 | Allow | 22 | 1 | 0 | Yes | No |
| 16969134 | QUARTZ GLASS CRUCIBLE | November 2020 | July 2022 | Allow | 23 | 1 | 1 | No | No |
| 17071714 | METHODS FOR FORMING SINGLE CRYSTAL SILICON INGOTS WITH IMPROVED RESISTIVITY CONTROL | October 2020 | March 2024 | Allow | 41 | 7 | 0 | No | No |
| 17067040 | METHOD FOR PRODUCING BULK SILICON CARBIDE | October 2020 | July 2022 | Allow | 21 | 1 | 0 | No | No |
| 17061911 | SEMICONDUCTOR CRYSTAL GROWTH APPARATUS | October 2020 | October 2022 | Abandon | 24 | 2 | 0 | No | No |
| 17061882 | SEMICONDUCTOR CRYSTAL GROWTH APPARATUS | October 2020 | October 2022 | Abandon | 24 | 2 | 0 | No | No |
| 17060585 | CRYSTALLIZATION OF AMORPHOUS MULTICOMPONENT IONIC COMPOUNDS | October 2020 | October 2022 | Allow | 25 | 2 | 1 | No | No |
| 17039060 | SEED CRYSTAL HOLDER FOR PULLING UP SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL USING THE SAME | September 2020 | April 2022 | Allow | 19 | 2 | 0 | Yes | No |
| 17030727 | WAFER CARRIER AND METHOD | September 2020 | August 2022 | Allow | 22 | 2 | 1 | Yes | No |
| 16981343 | METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL | September 2020 | August 2023 | Abandon | 35 | 4 | 1 | Yes | No |
| 17021691 | METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED | September 2020 | April 2022 | Allow | 19 | 1 | 0 | No | No |
| 17016443 | CRYSTAL GROWTH APPARATUS | September 2020 | April 2022 | Abandon | 19 | 1 | 0 | No | No |
| 16978813 | METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL | September 2020 | January 2023 | Abandon | 28 | 2 | 0 | No | No |
| 17005891 | METHOD AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE SILICON | August 2020 | March 2023 | Allow | 31 | 4 | 0 | Yes | No |
| 16971441 | METHOD FOR CONTROLLING CONVECTION PATTERN OF SILICON MELT, METHOD FOR PRODUCING SILICON SINGLE CRYSTALS, AND DEVICE FOR PULLING SILICON SINGLE CRYSTALS | August 2020 | July 2023 | Allow | 35 | 5 | 1 | Yes | No |
| 16971155 | METHOD OF ESTIMATING OXYGEN CONCENTRATION OF SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL | August 2020 | August 2022 | Allow | 24 | 2 | 1 | No | No |
| 16943892 | CRUCIBLE FOR INGOT GROWER | July 2020 | January 2023 | Allow | 29 | 3 | 0 | Yes | No |
| 16904563 | SEMICONDUCTOR CRYSTAL GROWTH APPARATUS | June 2020 | April 2022 | Abandon | 21 | 1 | 0 | No | No |
| 16904561 | SEMICONDUCTOR CRYSTAL GROWTH APPARATUS | June 2020 | April 2022 | Abandon | 21 | 1 | 0 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner QI, HUA.
With a 41.7% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 35.9% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is above the USPTO average, suggesting that filing an appeal can be an effective strategy for prompting reconsideration.
✓ Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.
✓ Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.
Examiner QI, HUA works in Art Unit 1714 and has examined 509 patent applications in our dataset. With an allowance rate of 51.5%, this examiner allows applications at a lower rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 37 months.
Examiner QI, HUA's allowance rate of 51.5% places them in the 8% percentile among all USPTO examiners. This examiner is less likely to allow applications than most examiners at the USPTO.
On average, applications examined by QI, HUA receive 2.68 office actions before reaching final disposition. This places the examiner in the 90% percentile for office actions issued. This examiner issues more office actions than most examiners, which may indicate thorough examination or difficulty in reaching agreement with applicants.
The median time to disposition (half-life) for applications examined by QI, HUA is 37 months. This places the examiner in the 13% percentile for prosecution speed. Applications take longer to reach final disposition with this examiner compared to most others.
Conducting an examiner interview provides a +28.5% benefit to allowance rate for applications examined by QI, HUA. This interview benefit is in the 79% percentile among all examiners. Recommendation: Interviews are highly effective with this examiner and should be strongly considered as a prosecution strategy. Per MPEP § 713.10, interviews are available at any time before the Notice of Allowance is mailed or jurisdiction transfers to the PTAB.
When applicants file an RCE with this examiner, 19.2% of applications are subsequently allowed. This success rate is in the 12% percentile among all examiners. Strategic Insight: RCEs show lower effectiveness with this examiner compared to others. Consider whether a continuation application might be more strategic, especially if you need to add new matter or significantly broaden claims.
This examiner enters after-final amendments leading to allowance in 21.1% of cases where such amendments are filed. This entry rate is in the 19% percentile among all examiners. Strategic Recommendation: This examiner rarely enters after-final amendments compared to other examiners. You should generally plan to file an RCE or appeal rather than relying on after-final amendment entry. Per MPEP § 714.12, primary examiners have discretion in entering after-final amendments, and this examiner exercises that discretion conservatively.
When applicants request a pre-appeal conference (PAC) with this examiner, 66.7% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 50% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences show above-average effectiveness with this examiner. If you have strong arguments, a PAC request may result in favorable reconsideration.
This examiner withdraws rejections or reopens prosecution in 67.6% of appeals filed. This is in the 48% percentile among all examiners. Of these withdrawals, 48.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows below-average willingness to reconsider rejections during appeals. Be prepared to fully prosecute appeals if filed.
When applicants file petitions regarding this examiner's actions, 63.8% are granted (fully or in part). This grant rate is in the 81% percentile among all examiners. Strategic Note: Petitions are frequently granted regarding this examiner's actions compared to other examiners. Per MPEP § 1002.02(c), various examiner actions are petitionable to the Technology Center Director, including prematureness of final rejection, refusal to enter amendments, and requirement for information. If you believe an examiner action is improper, consider filing a petition.
Examiner's Amendments: This examiner makes examiner's amendments in 0.0% of allowed cases (in the 3% percentile). This examiner rarely makes examiner's amendments compared to other examiners. You should expect to make all necessary claim amendments yourself through formal amendment practice.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 0.8% of allowed cases (in the 53% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.