Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18730316 | A method for crystallization of active pharmaceutical ingredients | July 2024 | March 2025 | Allow | 8 | 0 | 0 | No | No |
| 18636784 | FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY | April 2024 | January 2025 | Allow | 9 | 1 | 0 | No | No |
| 18626962 | SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON | April 2024 | November 2024 | Allow | 8 | 1 | 0 | No | No |
| 18616770 | MULTILAYER STRUCTURE | March 2024 | January 2025 | Abandon | 10 | 1 | 0 | No | No |
| 18690530 | PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNER WITH REGARD TO THE PROCESS | March 2024 | December 2024 | Allow | 9 | 0 | 0 | No | No |
| 18434568 | ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH | February 2024 | December 2024 | Allow | 10 | 1 | 0 | No | No |
| 18426526 | DIAMONDS AND HETERO-EPITAXIAL METHOD OF FORMING DIAMONDS | January 2024 | April 2025 | Allow | 14 | 2 | 0 | No | No |
| 18391435 | Enhanced Perovskite Materials for Photovoltaic Devices | December 2023 | January 2025 | Allow | 13 | 1 | 0 | No | No |
| 18491738 | METHODS AND DEVICES FOR GROWING SCINTILLATION CRYSTALS | October 2023 | June 2024 | Allow | 8 | 1 | 0 | No | No |
| 18369370 | CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS AND NANOSTRUCTURES | September 2023 | May 2025 | Allow | 20 | 1 | 0 | No | No |
| 18369372 | CYLINDRICAL SILICON INGOT MANUFACTURING METHOD | September 2023 | May 2025 | Allow | 20 | 1 | 0 | No | No |
| 18451511 | Substrate For Epitaxial Growth, Manufacturing Method of the Same, Semiconductor Device Including the Same and Manufacturing Method Using the Same | August 2023 | June 2025 | Abandon | 22 | 1 | 0 | No | No |
| 18225981 | HIGH-THROUGHPUT CRYSTALLOGRAPHIC SCREENING DEVICE AND METHOD FOR CRYSTALIZING MEMBRANE PROTEINS USING A SUB PHYSIOLOGICAL RESTING MEMBRANE POTENTIAL ACROSS A LIPID MATRIX OF VARIABLE COMPOSITION | July 2023 | June 2024 | Allow | 11 | 1 | 0 | No | No |
| 18351402 | TEMPLATE FOR GROWING A CRYSTAL OF A TWO-DIMENSIONAL MATERIAL | July 2023 | June 2025 | Allow | 23 | 0 | 0 | No | No |
| 18214052 | SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD | June 2023 | August 2024 | Allow | 13 | 2 | 0 | No | No |
| 18336024 | SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, METHOD FOR MANUFACTURING SILICON INGOT, AND SOLAR CELL | June 2023 | August 2024 | Abandon | 14 | 1 | 0 | No | No |
| 18205886 | SILICON WAFER AND MANUFACTURING METHOD OF THE SAME | June 2023 | August 2024 | Allow | 27 | 1 | 0 | No | No |
| 18255448 | CONTINUOUS PROCESS AND SYSTEM FOR THE PRODUCTION OF SODIUM BICARBONATE CRYSTALS | June 2023 | May 2025 | Allow | 23 | 0 | 0 | No | No |
| 18321823 | PREPARATION AND APPLICATION OF HIGHLY COHERENT DIAMOND NITROGEN VACANCY AND DIAMOND ANVIL | May 2023 | December 2023 | Allow | 7 | 0 | 0 | No | No |
| 18143557 | METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL | May 2023 | May 2024 | Allow | 12 | 1 | 0 | Yes | No |
| 18142415 | FABRICATION OF FILMS HAVING CONTROLLED STOICHIOMETRY USING MOLECULAR BEAM EPITAXY | May 2023 | March 2024 | Allow | 10 | 1 | 0 | No | No |
| 18307447 | STRUCTURES WITH BORON- AND GALLIUM-DOPED SILICON GERMANIUM LAYERS AND METHODS AND SYSTEMS FOR FORMING SAME | April 2023 | June 2025 | Allow | 26 | 1 | 0 | Yes | No |
| 18137150 | RECOVERING A CAUSTIC SOLUTION VIA CALCIUM CARBONATE CRYSTAL AGGREGATES | April 2023 | March 2024 | Allow | 11 | 1 | 0 | No | No |
| 18302378 | SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | April 2023 | June 2024 | Allow | 14 | 1 | 0 | No | No |
| 18298692 | BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER | April 2023 | July 2024 | Allow | 15 | 0 | 0 | Yes | No |
| 18298713 | SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICON | April 2023 | March 2024 | Allow | 11 | 1 | 0 | No | No |
| 18247859 | METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYER OF A GALIUM-BASED III-N ALLOY | April 2023 | January 2025 | Allow | 21 | 1 | 0 | No | No |
| 18193483 | FERROELECTRIC THIN FILM AND FORMING METHOD THEREOF | March 2023 | March 2025 | Allow | 24 | 1 | 0 | No | No |
| 18028921 | INGOT GROWING APPARATUS | March 2023 | March 2025 | Allow | 23 | 0 | 0 | No | No |
| 18028682 | DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS | March 2023 | February 2025 | Allow | 23 | 0 | 0 | No | No |
| 18189054 | METHOD FOR GROWING LONG-SEED DKDP CRYSTAL BY TWO-DIMENSIONAL MOTION | March 2023 | April 2025 | Allow | 25 | 1 | 0 | Yes | No |
| 18188177 | SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS | March 2023 | June 2025 | Allow | 27 | 1 | 0 | Yes | No |
| 18024539 | METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTOR | March 2023 | February 2025 | Allow | 23 | 1 | 0 | Yes | No |
| 18024317 | METHOD FOR CONTROLLED GROWTH OF NANOCRYSTALS | March 2023 | November 2024 | Allow | 20 | 0 | 0 | No | No |
| 18176505 | METHOD FOR FABRICATION OF HALIDE PEROVSKITE SINGLE CRYSTAL COMPRISING LOW-TEMPERATURE SOLVATION PROCESS | March 2023 | April 2025 | Allow | 26 | 1 | 0 | No | No |
| 18172900 | INGOT GROWING APPARATUS AND METHOD THEREOF | February 2023 | May 2025 | Allow | 27 | 1 | 0 | No | No |
| 18109904 | VAPOR DEPOSITION DEVICE AND METHOD OF PRODUCING EPITAXIAL WAFER | February 2023 | April 2025 | Allow | 26 | 1 | 0 | No | No |
| 18040991 | METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER | February 2023 | February 2025 | Allow | 24 | 1 | 0 | No | No |
| 18106333 | ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND METHODS FOR PRODUCING THE SAME | February 2023 | May 2024 | Allow | 15 | 1 | 0 | No | No |
| 18100520 | Enhanced Perovskite Materials for Photovoltaic Devices | January 2023 | September 2023 | Allow | 8 | 1 | 0 | No | No |
| 18006507 | LASER-BASED AFTERHEATING FOR CRYSTAL GROWTH | January 2023 | June 2025 | Abandon | 29 | 2 | 0 | No | No |
| 18153282 | METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK OF SEMICONDUCTOR EPITAXIAL LAYERS ON A PLURALITY OF SUBSTRATES | January 2023 | May 2025 | Allow | 28 | 2 | 1 | No | No |
| 18153272 | METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES | January 2023 | March 2025 | Allow | 26 | 1 | 1 | No | No |
| 18152544 | METHODS FOR PRODUCING A PRODUCT INGOT HAVING LOW OXYGEN CONTENT | January 2023 | March 2025 | Allow | 26 | 1 | 0 | No | No |
| 18087156 | SILICON CARBIDE POWDER AND METHOD FOR MANUFACTURING SILICON CARBIDE INGOT USING THE SAME | December 2022 | February 2025 | Allow | 26 | 1 | 0 | No | No |
| 18069987 | SINGLE CRYSTAL FURNACE CHARGING SYSTEM AND CHARGING METHOD | December 2022 | February 2025 | Allow | 26 | 1 | 0 | No | No |
| 18068735 | EPITAXIAL ALKALI HALIDE LAYERS FOR III-V SUBSTRATE RECYCLING | December 2022 | November 2024 | Allow | 23 | 1 | 0 | Yes | No |
| 18010335 | A FABRICATION PROCESS FOR FLEXIBLE SINGLE-CRYSTAL PEROVSKITE DEVICES | December 2022 | May 2025 | Allow | 29 | 2 | 0 | No | No |
| 18077455 | PRODUCTION APPARATUS FOR METAL OXIDE SINGLE CRYSTAL AND PRODUCTION METHOD FOR METAL OXIDE SINGLE CRYSTAL | December 2022 | November 2024 | Allow | 24 | 2 | 0 | No | No |
| 18063646 | OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTH | December 2022 | September 2023 | Allow | 9 | 2 | 0 | No | No |
| 18062598 | OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTH | December 2022 | January 2024 | Allow | 13 | 1 | 0 | No | No |
| 18062597 | OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTH | December 2022 | September 2023 | Allow | 10 | 1 | 0 | No | No |
| 18062595 | OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTH | December 2022 | September 2023 | Allow | 9 | 2 | 0 | No | No |
| 18073898 | HEAT EXCHANGE DEVICE AND SINGLE CRYSTAL FURNACE | December 2022 | April 2025 | Abandon | 28 | 1 | 0 | No | No |
| 18073228 | METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS | December 2022 | September 2024 | Allow | 22 | 0 | 0 | No | No |
| 18073179 | METHOD OF PRODUCING LARGE EMI SHIELDED GaAs INFRARED WINDOWS | December 2022 | March 2025 | Allow | 28 | 2 | 0 | No | No |
| 17928951 | Multi-Layer Semiconductor Material Structure and Preparation Method Thereof | December 2022 | December 2024 | Allow | 24 | 1 | 0 | No | No |
| 17993200 | SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE | November 2022 | June 2023 | Allow | 6 | 1 | 0 | No | No |
| 17919106 | MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MANUFACTURING METHOD OF ALUMINUM NITRIDE CRYSTALS, AND DOWNFALL DEFECT PREVENTION METHOD | October 2022 | June 2025 | Allow | 32 | 3 | 0 | No | No |
| 18046319 | SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE DURING A CRYSTAL GROWTH PROCESS | October 2022 | November 2024 | Allow | 25 | 1 | 0 | No | No |
| 18046314 | SYSTEMS AND METHODS FOR CONTROLLING A GAS DOPANT VAPORIZATION RATE DURING A CRYSTAL GROWTH PROCESS | October 2022 | October 2024 | Allow | 25 | 1 | 0 | No | No |
| 17964039 | METHOD FOR PRODUCING SILICON INGOT SINGLE CRYSTAL | October 2022 | September 2024 | Allow | 23 | 1 | 0 | No | No |
| 17961663 | CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELECTIVE GROWTH ON HEXAGONAL SiC SUBSTRATES | October 2022 | October 2024 | Allow | 24 | 1 | 0 | No | No |
| 17907517 | METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER MADE OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE MADE OF SIC | September 2022 | July 2024 | Allow | 22 | 1 | 0 | No | No |
| 17905985 | N-TYPE DOPED GERMANIUM MONOCRYSTALS AND WAFERS DERIVED THEREFROM | September 2022 | June 2025 | Allow | 33 | 3 | 0 | No | No |
| 17909149 | FLUIDIZED BED GRANULATOR OR FLUIDIZED BED/SPOUTED BED GRANULATOR | September 2022 | August 2024 | Allow | 23 | 1 | 0 | No | No |
| 17900740 | PREPARATION OF CONSERVED HOMOLOGY 1 DOMAINS COMPLEXED TO LIGANDS | August 2022 | September 2024 | Allow | 25 | 1 | 0 | Yes | No |
| 17893802 | A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL | August 2022 | July 2023 | Allow | 11 | 1 | 0 | No | No |
| 17819666 | MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON SUBSTRATE | August 2022 | August 2024 | Allow | 24 | 1 | 0 | Yes | No |
| 17884092 | APPARATUS, METHOD, AND PROCESS FOR DIRECTIONAL SOLIDIFICATION BY LIQUID METAL SPRAYING ENHANCED COOLING (LMSC) | August 2022 | August 2024 | Allow | 24 | 1 | 0 | Yes | No |
| 17797874 | MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER | August 2022 | March 2024 | Allow | 20 | 0 | 0 | No | No |
| 17881646 | PREPARATION OF SINGLE-CRYSTAL LAYERED CATHODE MATERIALS FOR LITHIUM- AND SODIUM-ION BATTERIES | August 2022 | April 2024 | Allow | 21 | 0 | 0 | No | No |
| 17797073 | PROCESS FOR SYNTHESIZING INDIUM PHOSPHIDE BY LIQUID PHOSPHORUS INJECTION METHOD | August 2022 | September 2024 | Allow | 25 | 1 | 0 | No | No |
| 17816558 | METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL | August 2022 | August 2023 | Allow | 12 | 2 | 0 | No | No |
| 17794108 | Field-Editing Technology For Quantum Materials Synthesis Using A Magnetic Field Laser Furnace | July 2022 | August 2023 | Allow | 13 | 1 | 0 | No | No |
| 17865873 | ACTIVE CLEANING VACUUM SYSTEM AND METHOD | July 2022 | April 2023 | Allow | 9 | 1 | 0 | No | No |
| 17812186 | METHOD FOR GROWING GALLIUM OXIDE SINGLE CRYSTAL BY CASTING AND SEMICONDUCTOR DEVICE CONTAINING GALLIUM OXIDE SINGLE CRYSTAL | July 2022 | December 2023 | Allow | 17 | 2 | 0 | No | No |
| 17858776 | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON INGOT USING A CRUCIBLE IN WHICH AN OXYGEN EXHAUST PASSAGE IS FORMED BY SINGLE CRYSTAL OR POLYCRYSTALLINE RODS | July 2022 | November 2023 | Allow | 16 | 1 | 0 | No | No |
| 17790639 | SYSTEM FOR PRODUCING MAGNESIUM CHLORIDE AQUEOUS SOLUTION AND SYSTEM FOR PRODUCING MAGNESIUM | July 2022 | March 2025 | Allow | 33 | 0 | 0 | No | No |
| 17838956 | In-situ Laser Annealing of Te growth defects in CdZnTe (iLAST-CZT) | June 2022 | March 2023 | Allow | 9 | 0 | 0 | No | No |
| 17837044 | EPITAXIAL GROWTH DEVICE | June 2022 | April 2025 | Allow | 34 | 1 | 0 | No | No |
| 17834238 | Method for preparing large size Beta-type Ammonium tetramolybdate monocrystal particle | June 2022 | September 2023 | Allow | 16 | 2 | 0 | No | No |
| 17826359 | CRYSTAL GROWTH DOPING APPARATUS AND CRYSTAL GROWTH DOPING METHOD | May 2022 | March 2024 | Allow | 22 | 0 | 0 | No | No |
| 17780162 | INGOT TEMPERATURE CONTROLLER AND WIRE SAWING DEVICE HAVING SAME | May 2022 | July 2024 | Allow | 26 | 1 | 0 | No | No |
| 17743039 | METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUM LAYERS | May 2022 | December 2023 | Allow | 19 | 2 | 0 | Yes | No |
| 17755937 | NANOWIRES NETWORK | May 2022 | March 2025 | Allow | 34 | 2 | 0 | No | No |
| 17775901 | ONLINE MEASUREMENT DEVICE FOR CRYSTAL SIZE AND SHAPE IN HIGH-SOLID-CONTENT CRYSTALLIZATION PROCESS | May 2022 | May 2024 | Allow | 24 | 0 | 0 | No | No |
| 17741595 | HIGH-THROUGHPUT CRYSTALLOGRAPHIC SCREENING DEVICE AND METHOD FOR CRYSTALIZING MEMBRANE PROTEINS USING A SUB PHYSIOLOGICAL RESTING MEMBRANE POTENTIAL ACROSS A LIPID MATRIX OF VARIABLE COMPOSITION | May 2022 | March 2023 | Allow | 10 | 1 | 0 | No | No |
| 17734416 | METHOD AND APPARATUS FOR PRODUCING ALN WHISKERS , ALN WHISKER BODIES, ALN WHISKERS, RESIN MOLDED BODY, AND METHOD FOR PRODUCING RESIN MOLDED BODY | May 2022 | November 2023 | Allow | 19 | 1 | 0 | No | No |
| 17660687 | COMPOSITIONS AND AGGREGATES COMPRISING BORON NITRIDE NANOTUBE STRUCTURES, AND METHODS OF MAKING | April 2022 | August 2023 | Allow | 15 | 1 | 0 | No | No |
| 17722014 | METHOD AND APPARATUS FOR LASER ANNEALING | April 2022 | July 2024 | Allow | 27 | 1 | 0 | No | No |
| 17658421 | APPARATUS FOR MANIPULATING CRYSTAL MORPHOLOGY TO ACHIEVE STABLE FLUIDIZATION | April 2022 | April 2023 | Allow | 13 | 0 | 0 | No | No |
| 17764116 | SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFACTURING DEVICE, AND SIC SINGLE CRYSTAL WAFER | March 2022 | January 2024 | Allow | 22 | 2 | 0 | No | No |
| 17702158 | CRYSTAL MANUFACTURING METHOD, CRYSTAL MANUFACTURING APPARATUS AND SINGLE CRYSTAL | March 2022 | August 2023 | Allow | 17 | 1 | 0 | No | No |
| 17702219 | ORGANIC SOLID CRYSTAL - METHOD AND STRUCTURE | March 2022 | February 2024 | Allow | 23 | 1 | 0 | No | No |
| 17762101 | DEVICE AND METHOD FOR PULLING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL | March 2022 | August 2024 | Allow | 29 | 1 | 0 | No | No |
| 17761322 | PREPARATION METHOD OF CONDUCTIVE GALLIUM OXIDE BASED ON DEEP LEARNING AND VERTICAL BRIDGMAN GROWTH METHOD | March 2022 | June 2024 | Allow | 27 | 1 | 0 | No | No |
| 17761030 | PREPARATION METHOD OF HIGH RESISTANCE GALLIUM OXIDE BASED ON DEEP LEARNING AND VERTICAL BRIDGMAN GROWTH METHOD | March 2022 | April 2024 | Allow | 25 | 2 | 0 | Yes | No |
| 17760945 | QUALITY PREDICTION METHOD, PREPARATION METHOD AND SYSTEM OF CONDUCTIVE GALLIUM OXIDE BASED ON DEEP LEARNING AND EDGE-DEFINED FILM-FED GROWTH METHOD | March 2022 | April 2024 | Allow | 25 | 2 | 0 | No | No |
| 17760938 | QUALITY PREDICTION METHOD, PREPARATION METHOD AND SYSTEM OF HIGH RESISTANCE GALLIUM OXIDE BASED ON DEEP LEARNING AND CZOCHRALSKI METHOD | March 2022 | April 2024 | Allow | 25 | 2 | 0 | No | No |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner KUNEMUND, ROBERT M.
With a 52.6% reversal rate, the PTAB has reversed the examiner's rejections more often than affirming them. This reversal rate is in the top 25% across the USPTO, indicating that appeals are more successful here than in most other areas.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 47.2% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is above the USPTO average, suggesting that filing an appeal can be an effective strategy for prompting reconsideration.
✓ Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.
✓ Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.
Examiner KUNEMUND, ROBERT M works in Art Unit 1714 and has examined 1,288 patent applications in our dataset. With an allowance rate of 85.6%, this examiner has an above-average tendency to allow applications. Applications typically reach final disposition in approximately 30 months.
Examiner KUNEMUND, ROBERT M's allowance rate of 85.6% places them in the 57% percentile among all USPTO examiners. This examiner has an above-average tendency to allow applications.
On average, applications examined by KUNEMUND, ROBERT M receive 1.57 office actions before reaching final disposition. This places the examiner in the 40% percentile for office actions issued. This examiner issues fewer office actions than average, which may indicate efficient prosecution or a more lenient examination style.
The median time to disposition (half-life) for applications examined by KUNEMUND, ROBERT M is 30 months. This places the examiner in the 39% percentile for prosecution speed. Prosecution timelines are slightly slower than average with this examiner.
Conducting an examiner interview provides a +13.3% benefit to allowance rate for applications examined by KUNEMUND, ROBERT M. This interview benefit is in the 54% percentile among all examiners. Recommendation: Interviews provide an above-average benefit with this examiner and are worth considering.
When applicants file an RCE with this examiner, 29.7% of applications are subsequently allowed. This success rate is in the 48% percentile among all examiners. Strategic Insight: RCEs show below-average effectiveness with this examiner. Carefully evaluate whether an RCE or continuation is the better strategy.
This examiner enters after-final amendments leading to allowance in 66.5% of cases where such amendments are filed. This entry rate is in the 87% percentile among all examiners. Strategic Recommendation: This examiner is highly receptive to after-final amendments compared to other examiners. Per MPEP § 714.12, after-final amendments may be entered "under justifiable circumstances." Consider filing after-final amendments with a clear showing of allowability rather than immediately filing an RCE, as this examiner frequently enters such amendments.
When applicants request a pre-appeal conference (PAC) with this examiner, 66.7% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 50% percentile among all examiners. Strategic Recommendation: Pre-appeal conferences show above-average effectiveness with this examiner. If you have strong arguments, a PAC request may result in favorable reconsideration.
This examiner withdraws rejections or reopens prosecution in 74.3% of appeals filed. This is in the 59% percentile among all examiners. Of these withdrawals, 43.6% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.
When applicants file petitions regarding this examiner's actions, 51.9% are granted (fully or in part). This grant rate is in the 64% percentile among all examiners. Strategic Note: Petitions show above-average success regarding this examiner's actions. Petitionable matters include restriction requirements (MPEP § 1002.02(c)(2)) and various procedural issues.
Examiner's Amendments: This examiner makes examiner's amendments in 3.0% of allowed cases (in the 82% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.
Quayle Actions: This examiner issues Ex Parte Quayle actions in 1.5% of allowed cases (in the 61% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.