USPTO Examiner KUNEMUND ROBERT M - Art Unit 1714

Recent Applications

Detailed information about the 100 most recent patent applications.

Application NumberTitleFiling DateDisposal DateDispositionTime (months)Office ActionsRestrictionsInterviewAppeal
19075353CONTINUOUS PREPARATION METHOD OF LARGE-AREA SINGLE-CRYSTAL (100) COPPER FOILMarch 2025July 2025Allow500NoNo
18868249METHOD AND SYSTEM FOR PROCESSING A DIAMONDNovember 2024October 2025Allow1110NoNo
18941479Hybrid Seed Structure for Crystal Growth SystemNovember 2024June 2025Allow710NoNo
18730316A method for crystallization of active pharmaceutical ingredientsJuly 2024March 2025Allow800NoNo
18773412METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND LAMINATE STRUCTUREJuly 2024December 2025Allow1710NoNo
18760935RECOVERING A CAUSTIC SOLUTION VIA CALCIUM CARBONATE CRYSTAL AGGREGATESJuly 2024December 2025Allow1710NoNo
18636784FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXYApril 2024January 2025Allow910NoNo
18626962SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICONApril 2024November 2024Allow810NoNo
18616770MULTILAYER STRUCTUREMarch 2024January 2025Abandon1010NoNo
18691466PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR WAFER, AND MONOCRYSTALLINE SILICON SEMICONDUCTOR WAFERMarch 2024March 2026Allow2400NoNo
18603661METHODS DIRECTED TO CRYSTALLINE BIOMOLECULESMarch 2024October 2025Allow1920NoNo
18690530PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNER WITH REGARD TO THE PROCESSMarch 2024December 2024Allow900NoNo
18437285INDUCTION MELTING OF SILICON USING TANTALUM AS A HEAT-DELIVERY SEEDFebruary 2024February 2026Allow2400NoNo
18434568ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTHFebruary 2024December 2024Allow1010NoNo
18426526DIAMONDS AND HETERO-EPITAXIAL METHOD OF FORMING DIAMONDSJanuary 2024April 2025Allow1420NoNo
18293137PREPARATION DEVICE AND METHOD FOR SEMI-INSULATING INDIUM PHOSPHIDEJanuary 2024January 2026Allow2400NoNo
18291881LARGE-SCALE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL GROWTH SYSTEM AND METHODJanuary 2024March 2026Allow2610NoNo
18579515METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATEJanuary 2024February 2026Allow2500NoNo
18412584OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTHJanuary 2024March 2026Allow2620NoNo
18396266METHODS FOR PRODUCING OFF-ORIENTATION SINGLE CRYSTAL SILICON WAFERSDecember 2023February 2026Allow2510NoNo
18391435Enhanced Perovskite Materials for Photovoltaic DevicesDecember 2023January 2025Allow1310NoNo
18543275Pressure-induced crystallization and topochemical cross-linking of conjugated polymersDecember 2023January 2026Allow2500NoNo
18543037ORGANIC SOLID CRYSTAL ENCAPSULATIONDecember 2023March 2026Allow2710YesNo
18539825PROCESS FOR SYNTHESIZING SPINEL-COATED SINGLE-CRYSTAL CATHODE ACTIVE MATERIALSDecember 2023December 2025Allow2400NoNo
18523934THERMAL STABLE, ONE-DIMENSIONAL HEXAGONAL-PHASE VANADIUM SULFIDE NANOWIRES AND METHODS FOR PREPARING THE SAMENovember 2023February 2026Allow2610NoNo
18505971APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USENovember 2023February 2026Allow2710YesNo
18491738METHODS AND DEVICES FOR GROWING SCINTILLATION CRYSTALSOctober 2023June 2024Allow810NoNo
18490513DNA-PROGRAMMED PHOTONIC CRYSTAL FABRICATION PROCESSESOctober 2023March 2026Allow2901NoNo
18555497CRYSTAL ROD MANUFACTURING METHOD AND CRYSTAL RODOctober 2023January 2026Allow2710NoNo
18283805SINGLE-CRYSTAL DIAMOND, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SINGLE-CRYSTAL DIAMOND PLATESeptember 2023December 2025Allow2710NoNo
18469661COMPOSITE SUBSTRATE, METHOD FOR PRODUCING COMPOSITE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM OXIDE CRYSTAL FILMSeptember 2023October 2025Allow2500NoNo
18369372CYLINDRICAL SILICON INGOT MANUFACTURING METHODSeptember 2023May 2025Allow2010NoNo
18369370CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS AND NANOSTRUCTURESSeptember 2023May 2025Allow2010NoNo
18466328VORTEX CRYSTALLIZER AND METHODSeptember 2023March 2026Allow3010NoNo
18281176SINGLE CRYSTAL PULLING APPARATUS AND METHOD FOR PULLING SINGLE CRYSTALSeptember 2023March 2026Allow3010NoNo
18030814INTAKE/EXHAUST DEVICE OF APPARATUS FOR CONTINUOUSLY GROWING SILICON INGOTSeptember 2023February 2026Allow3420NoNo
18549018SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATESeptember 2023August 2025Allow2300NoNo
18548933APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE OF SILICONSeptember 2023November 2025Allow2600NoNo
18451511Substrate For Epitaxial Growth, Manufacturing Method of the Same, Semiconductor Device Including the Same and Manufacturing Method Using the SameAugust 2023June 2025Abandon2210NoNo
18229051SELECTIVE DEPOSITION OF DIAMONDAugust 2023October 2025Allow2710NoNo
18225981HIGH-THROUGHPUT CRYSTALLOGRAPHIC SCREENING DEVICE AND METHOD FOR CRYSTALIZING MEMBRANE PROTEINS USING A SUB PHYSIOLOGICAL RESTING MEMBRANE POTENTIAL ACROSS A LIPID MATRIX OF VARIABLE COMPOSITIONJuly 2023June 2024Allow1110NoNo
18273774SILICON CARBIDE EPITAXIAL SUBSTRATEJuly 2023October 2025Allow2700NoNo
18224396ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAMEJuly 2023September 2025Allow2610NoNo
18223345MOVABLE CENTRAL REFLECTORS OF SEMICONDUCTOR PROCESSING EQUIPMENT, AND RELATED SYSTEMS AND METHODSJuly 2023September 2025Allow2600NoNo
18351402TEMPLATE FOR GROWING A CRYSTAL OF A TWO-DIMENSIONAL MATERIALJuly 2023June 2025Allow2300NoNo
18341917NON-CONTACT SYSTEMS AND METHODS FOR DETERMINING DISTANCE BETWEEN SILICON MELT AND REFLECTOR IN A CRYSTAL PULLERJune 2023November 2025Allow2920NoNo
18269888HEAT-RESISTANT MEMBERJune 2023December 2025Allow2910YesNo
18214052SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHODJune 2023August 2024Allow1320NoNo
18258890SUBSTRATE FOR EPITAXIALLY GROWING DIAMOND CRYSTAL AND METHOD OF MANUFACTURING DIAMOND CRYSTALJune 2023November 2025Allow2910NoNo
18336024SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, METHOD FOR MANUFACTURING SILICON INGOT, AND SOLAR CELLJune 2023August 2024Abandon1410NoNo
18267479CRYSTAL GROWTH CONTROL METHOD AND APPARATUS, AND CRYSTAL GROWTH DEVICEJune 2023August 2025Allow2610NoNo
18206457PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDESJune 2023September 2025Allow2710NoNo
18205886SILICON WAFER AND MANUFACTURING METHOD OF THE SAMEJune 2023August 2024Allow2710NoNo
18255448CONTINUOUS PROCESS AND SYSTEM FOR THE PRODUCTION OF SODIUM BICARBONATE CRYSTALSJune 2023May 2025Allow2300NoNo
18323847ENCLOSED CRYSTAL GROWTHMay 2023July 2025Allow2610NoNo
18322662METHOD OF MANUFACTURE OF A WATCH CRYSTALMay 2023December 2025Allow3020NoNo
18321977MANUFACTURING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATEMay 2023September 2025Allow2810NoNo
18321823PREPARATION AND APPLICATION OF HIGHLY COHERENT DIAMOND NITROGEN VACANCY AND DIAMOND ANVILMay 2023December 2023Allow700NoNo
18321756SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTAL EXPANSION METHOD AND SILICON CARBIDE CRYSTAL EXPANSION PROCESSMay 2023November 2025Abandon3010NoNo
18253757Acquisition Equipment and Method for Acquiring Nitrogen-Doped Silicon Melt and Manufacturing System of Nitrogen-Doped Monocrystalline SiliconMay 2023September 2025Allow2810NoNo
18037802SINGLE CRYSTAL MANUFACTURING APPARATUSMay 2023August 2025Allow2710NoNo
18037672Improved Furnace Apparatus for Crystal ProductionMay 2023August 2025Allow2710NoNo
17996189METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR FORMING ALUMINUM NITRIDE LAYERMay 2023November 2025Allow3720NoNo
18252853LITHIUM COMPOSITE OXIDE SINGLE CRYSTAL, LITHIUM COMPOSITE OXIDE POLYCRYSTAL, LITHIUM COMPOSITE OXIDE MATERIAL, SOLID ELECTROLYTE MATERIAL, ALL-SOLID-STATE LITHIUM-ION SECONDARY BATTERY, AND METHOD FOR PRODUCING SOLID ELECTROLYTE MATERIALMay 2023August 2025Allow2710NoNo
18313730INGOT PULLER APPARATUS INCLUDING AUTOMATED CLAMPMay 2023September 2025Allow2810NoNo
18143557METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIALMay 2023May 2024Allow1210YesNo
18142415FABRICATION OF FILMS HAVING CONTROLLED STOICHIOMETRY USING MOLECULAR BEAM EPITAXYMay 2023March 2024Allow1010NoNo
18307447STRUCTURES WITH BORON- AND GALLIUM-DOPED SILICON GERMANIUM LAYERS AND METHODS AND SYSTEMS FOR FORMING SAMEApril 2023June 2025Allow2610YesNo
18250262PREPARATION METHOD OF CONDUCTIVE GALLIUM OXIDE BASED ON DEEP LEARNING AND HEAT EXCHANGE METHODApril 2023February 2026Abandon3320NoNo
18137069NANOCRYSTALLINE DIAMOND WITH AMORPHOUS INTERFACIAL LAYERApril 2023August 2025Allow2810NoNo
18137150RECOVERING A CAUSTIC SOLUTION VIA CALCIUM CARBONATE CRYSTAL AGGREGATESApril 2023March 2024Allow1110NoNo
18249634SOLID SOURCE METAL-ORGANIC MOLECULAR BEAM EPITAXY FOR DEPOSITION OF ULTRA-LOW VAPOR PRESSURE METALS AND METAL OXIDESApril 2023September 2025Allow2910NoNo
18302378SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICEApril 2023June 2024Allow1410NoNo
18134494MOLYBDENUM PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPULATIONApril 2023October 2025Allow3020NoNo
18298713SYSTEMS FOR PRODUCTION OF LOW OXYGEN CONTENT SILICONApril 2023March 2024Allow1110NoNo
18298692BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYERApril 2023July 2024Allow1500YesNo
18247859METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYER OF A GALIUM-BASED III-N ALLOYApril 2023January 2025Allow2110NoNo
18247644GaAs WAFER AND METHOD OF PRODUCING GaAs INGOTApril 2023September 2025Allow3020NoNo
18193483FERROELECTRIC THIN FILM AND FORMING METHOD THEREOFMarch 2023March 2025Allow2410NoNo
18192811LARGE-SIZE DIAMOND, MPCVD DEVICE AND PREPARATION METHOD OF LARGE-SIZE DIAMONDMarch 2023July 2025Allow2810NoNo
18127757SiC CRYSTAL GROWTH APPARATUS AND METHODMarch 2023July 2025Allow2810NoNo
18028921INGOT GROWING APPARATUSMarch 2023March 2025Allow2300NoNo
18191129VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYERMarch 2023February 2026Allow3430YesNo
18028685METHOD FOR GROWING CRYSTALSMarch 2023July 2025Allow2820NoNo
18028682DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALSMarch 2023February 2025Allow2300NoNo
18189054METHOD FOR GROWING LONG-SEED DKDP CRYSTAL BY TWO-DIMENSIONAL MOTIONMarch 2023April 2025Allow2510YesNo
18188177SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUSMarch 2023June 2025Allow2710YesNo
18186150EMBEDDED SINGLE CRYSTAL DIAMOND(S) IN A POLYCRYSTALLINE DIAMOND STRUCTURE AND A METHOD OF GROWING ITMarch 2023March 2026Abandon3610NoNo
18025576METHOD FOR PRODUCING COMPOUNDMarch 2023March 2026Allow3610NoNo
18044072SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSITION EPITAXIAL GROWTH PROCESSMarch 2023November 2025Allow3310NoNo
18024539METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTORMarch 2023February 2025Allow2310YesNo
18024317METHOD FOR CONTROLLED GROWTH OF NANOCRYSTALSMarch 2023November 2024Allow2000NoNo
18176505METHOD FOR FABRICATION OF HALIDE PEROVSKITE SINGLE CRYSTAL COMPRISING LOW-TEMPERATURE SOLVATION PROCESSMarch 2023April 2025Allow2610NoNo
18043094SiC POLYCRYSTAL MANUFACTURING METHODFebruary 2023August 2025Abandon2910NoNo
18172900INGOT GROWING APPARATUS AND METHOD THEREOFFebruary 2023May 2025Allow2710NoNo
18109904VAPOR DEPOSITION DEVICE AND METHOD OF PRODUCING EPITAXIAL WAFERFebruary 2023April 2025Allow2610NoNo
18040991METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFERFebruary 2023February 2025Allow2410NoNo
18106333ADDITIVELY MANUFACTURED SINGLE-CRYSTAL METALLIC COMPONENTS, AND METHODS FOR PRODUCING THE SAMEFebruary 2023May 2024Allow1510NoNo
18163635INGOT PULLER APPARATUS HAVING SILICON FEED TUBES WITH KICK PLATESFebruary 2023July 2025Allow3020NoNo
18103886FLAT EPITAXIAL WAFER HAVING MINIMAL THICKNESS VARIATIONJanuary 2023January 2026Allow3620NoNo

Appeals Overview

This analysis examines appeal outcomes and the strategic value of filing appeals for examiner KUNEMUND, ROBERT M.

Patent Trial and Appeal Board (PTAB) Decisions

Total PTAB Decisions
23
Examiner Affirmed
10
(43.5%)
Examiner Reversed
13
(56.5%)
Reversal Percentile
81.6%
Higher than average

What This Means

With a 56.5% reversal rate, the PTAB has reversed the examiner's rejections more often than affirming them. This reversal rate is in the top 25% across the USPTO, indicating that appeals are more successful here than in most other areas.

Strategic Value of Filing an Appeal

Total Appeal Filings
78
Allowed After Appeal Filing
38
(48.7%)
Not Allowed After Appeal Filing
40
(51.3%)
Filing Benefit Percentile
77.0%
Higher than average

Understanding Appeal Filing Strategy

Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.

In this dataset, 48.7% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is in the top 25% across the USPTO, indicating that filing appeals is particularly effective here. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Strategic Recommendations

Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.

Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.

Examiner KUNEMUND, ROBERT M - Prosecution Strategy Guide

Executive Summary

Examiner KUNEMUND, ROBERT M works in Art Unit 1714 and has examined 1,185 patent applications in our dataset. With an allowance rate of 84.7%, this examiner has an above-average tendency to allow applications. Applications typically reach final disposition in approximately 32 months.

Allowance Patterns

Examiner KUNEMUND, ROBERT M's allowance rate of 84.7% places them in the 60% percentile among all USPTO examiners. This examiner has an above-average tendency to allow applications.

Office Action Patterns

On average, applications examined by KUNEMUND, ROBERT M receive 1.63 office actions before reaching final disposition. This places the examiner in the 32% percentile for office actions issued. This examiner issues fewer office actions than average, which may indicate efficient prosecution or a more lenient examination style.

Prosecution Timeline

The median time to disposition (half-life) for applications examined by KUNEMUND, ROBERT M is 32 months. This places the examiner in the 50% percentile for prosecution speed. Prosecution timelines are slightly slower than average with this examiner.

Interview Effectiveness

Conducting an examiner interview provides a +12.9% benefit to allowance rate for applications examined by KUNEMUND, ROBERT M. This interview benefit is in the 50% percentile among all examiners. Recommendation: Interviews provide a below-average benefit with this examiner.

Request for Continued Examination (RCE) Effectiveness

When applicants file an RCE with this examiner, 29.1% of applications are subsequently allowed. This success rate is in the 54% percentile among all examiners. Strategic Insight: RCEs show above-average effectiveness with this examiner. Consider whether your amendments or new arguments are strong enough to warrant an RCE versus filing a continuation.

After-Final Amendment Practice

This examiner enters after-final amendments leading to allowance in 65.0% of cases where such amendments are filed. This entry rate is in the 89% percentile among all examiners. Strategic Recommendation: This examiner is highly receptive to after-final amendments compared to other examiners. Per MPEP § 714.12, after-final amendments may be entered "under justifiable circumstances." Consider filing after-final amendments with a clear showing of allowability rather than immediately filing an RCE, as this examiner frequently enters such amendments.

Pre-Appeal Conference Effectiveness

When applicants request a pre-appeal conference (PAC) with this examiner, 60.0% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 50% percentile among all examiners. Note: Pre-appeal conferences show below-average success with this examiner. Consider whether your arguments are strong enough to warrant a PAC request.

Appeal Withdrawal and Reconsideration

This examiner withdraws rejections or reopens prosecution in 72.3% of appeals filed. This is in the 60% percentile among all examiners. Of these withdrawals, 40.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows above-average willingness to reconsider rejections during appeals. The mandatory appeal conference (MPEP § 1207.01) provides an opportunity for reconsideration.

Petition Practice

When applicants file petitions regarding this examiner's actions, 50.3% are granted (fully or in part). This grant rate is in the 49% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.

Examiner Cooperation and Flexibility

Examiner's Amendments: This examiner makes examiner's amendments in 3.4% of allowed cases (in the 81% percentile). Per MPEP § 1302.04, examiner's amendments are used to place applications in condition for allowance when only minor changes are needed. This examiner frequently uses this tool compared to other examiners, indicating a cooperative approach to getting applications allowed. Strategic Insight: If you are close to allowance but minor claim amendments are needed, this examiner may be willing to make an examiner's amendment rather than requiring another round of prosecution.

Quayle Actions: This examiner issues Ex Parte Quayle actions in 1.6% of allowed cases (in the 65% percentile). This examiner issues Quayle actions more often than average when claims are allowable but formal matters remain (MPEP § 714.14).

Prosecution Strategy Recommendations

Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:

  • Consider after-final amendments: This examiner frequently enters after-final amendments. If you can clearly overcome rejections with claim amendments, file an after-final amendment before resorting to an RCE.
  • Examiner cooperation: This examiner frequently makes examiner's amendments to place applications in condition for allowance. If you are close to allowance, the examiner may help finalize the claims.

Relevant MPEP Sections for Prosecution Strategy

  • MPEP § 713.10: Examiner interviews - available before Notice of Allowance or transfer to PTAB
  • MPEP § 714.12: After-final amendments - may be entered "under justifiable circumstances"
  • MPEP § 1002.02(c): Petitionable matters to Technology Center Director
  • MPEP § 1004: Actions requiring primary examiner signature (allowances, final rejections, examiner's answers)
  • MPEP § 1207.01: Appeal conferences - mandatory for all appeals
  • MPEP § 1214.07: Reopening prosecution after appeal

Important Disclaimer

Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.

No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.

Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.

Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.