Detailed information about the 100 most recent patent applications.
| Application Number | Title | Filing Date | Disposal Date | Disposition | Time (months) | Office Actions | Restrictions | Interview | Appeal |
|---|---|---|---|---|---|---|---|---|---|
| 18655053 | Physical vapor transport system comprising a doping capsule with inner and outer crucibles with a capillary channel formed in an inner and outer crucible lid | May 2024 | December 2025 | Allow | 19 | 1 | 0 | No | No |
| 18601996 | METHODS FOR CRYSTAL GROWTH BY REPLACING A SUBLIMATED TARGET SOURCE MATERIAL WITH A CANDIDATE SOURCE MATERIAL | March 2024 | August 2025 | Allow | 17 | 1 | 0 | No | No |
| 18394999 | Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region | December 2023 | July 2025 | Allow | 19 | 4 | 0 | No | No |
| 18492482 | METHODS OF FORMING SILICON CARBIDE COATED BASE SUBSTRATES AT MULTIPLE TEMPERATURES | October 2023 | October 2024 | Allow | 11 | 1 | 0 | Yes | No |
| 18381565 | ADVANCED TEMPERATURE CONTROL FOR WAFER CARRIER IN PLASMA PROCESSING CHAMBER | October 2023 | December 2024 | Allow | 13 | 1 | 0 | No | No |
| 18380453 | METHOD FOR PREPARING A P-TYPE ZRCOSB-BASED HALF-HEUSLER SINGLE CRYSTAL ALLOY WITH A CHEMICAL COMPOSITION OF ZRCOSB1-XSNX BY VERTICAL BRIDGMAN DIRECTIONAL CRYSTALLIZATION | October 2023 | February 2026 | Allow | 28 | 2 | 0 | No | No |
| 18373510 | MANUFACTURING METHOD OF COMPOSITE OXIDE WHICH IS REPRESENTED BY FORMULA LIMPO4, WHERE M MEANS IRON AND MANGANESE | September 2023 | December 2025 | Allow | 27 | 1 | 0 | No | No |
| 18372803 | GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY | September 2023 | August 2024 | Allow | 11 | 1 | 0 | No | No |
| 18549050 | SIMULTANEOUS GROWTH OF EPITAXIAL MONOCRYSTALLINE SILICON CARBIDE LAYERS ON FIRST AND SECOND RESPECTIVE SUBSTRATES | September 2023 | February 2026 | Allow | 29 | 1 | 0 | No | No |
| 18548077 | PROCESS OF AUTOMATIC CRYSTAL BAR COLLECTION | August 2023 | March 2026 | Abandon | 30 | 1 | 0 | No | No |
| 18548087 | UPPER CYLINDER APPLIED IN SINGLE CRYSTAL FURNACE AND INCLUDING BOSS FOR PLACING COVER PLATE OF DIVERSION CYLINDER | August 2023 | November 2025 | Allow | 27 | 1 | 0 | No | No |
| 18546046 | METHOD FOR CONTROLLING SUPPLY OF SOLID SILICON TO PRELIMINARY CRUCIBLE OF INGOT GROWTH APPARATUS | August 2023 | October 2025 | Allow | 26 | 1 | 0 | No | No |
| 18274828 | CRUCIBLE AND CRUCIBLE ASSEMBLY, FOR PREPARING CATHODE ACTIVE MATERIAL | July 2023 | September 2025 | Allow | 26 | 1 | 0 | No | No |
| 18274401 | METHODS OF GROWING LARGE CRYSTALS OF ALL-INORGANIC AND HYBRID ORGANIC-INORGANIC CESIUM LEAD BROMIDE PEROVSKITES FROM SOLUTION | July 2023 | February 2026 | Allow | 31 | 1 | 1 | No | No |
| 18355734 | QUALITY CONTROL METHOD FOR GROWING SILICON CARBIDE CRYSTAL | July 2023 | February 2026 | Allow | 31 | 1 | 1 | No | No |
| 18344863 | Method of performing crystal growth processes on a first crystal seed by adjusting a ratio difference of an axial temperature gradient and a radial temperature gradient | June 2023 | September 2025 | Allow | 26 | 1 | 0 | No | No |
| 18205532 | Method for growing halide perovskite nanocrystals through in-situ chemical vapor deposition | June 2023 | January 2026 | Abandon | 31 | 1 | 0 | No | No |
| 18323775 | METHODS FOR ADDING A PLURALITY OF DOPANT BATCHES TO AN INGOT PULLER APPARATUS | May 2023 | February 2026 | Allow | 33 | 2 | 1 | No | No |
| 18323770 | INGOT PULLER APPARATUS HAVING DOPANT FEEDERS FOR ADDING A PLURALITY OF DOPANT BATCHES | May 2023 | December 2025 | Allow | 30 | 1 | 1 | No | No |
| 18201023 | SYSTEMS AND METHODS FOR PULSED BEAM DEPOSITION OF EPITAXIAL CRYSTAL LAYERS | May 2023 | November 2025 | Abandon | 30 | 1 | 1 | No | No |
| 18037647 | METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT, METHOD FOR CONTROLLING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL | May 2023 | December 2025 | Allow | 31 | 2 | 0 | Yes | No |
| 18139605 | METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER | April 2023 | March 2025 | Abandon | 22 | 2 | 0 | No | No |
| 18123598 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR INCLUDING CONTROLLING SURFACE MODIFICATION WEIGHT RATIO | March 2023 | October 2024 | Abandon | 19 | 2 | 0 | No | No |
| 18121823 | METALORGANIC CHEMICAL VAPOR PHASE DEPOSITION APPARATUS HAVING BUBBLER WITH FIRST SUPPLY SECTION LEADING TO REACTOR, FIRST, SECOND AND THIRD MASS FLOW CONTROLLER AND PRESSURE SENSOR | March 2023 | October 2025 | Allow | 32 | 6 | 0 | Yes | Yes |
| 18181146 | APPARATUS FOR FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW-VAPOR PRESSURE METALORGANIC PRECURSORS IN CVD SYSTEMS AND METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING THE SAME | March 2023 | December 2024 | Abandon | 21 | 2 | 1 | No | No |
| 18177724 | PREPARATION METHOD OF P-TYPE HIGH-RESISTANCE AND ULTRA-HIGH-RESISTANCE CZOCHRALSKI MONOCRYSTALLINE SILICON SUBSTRATE | March 2023 | November 2025 | Abandon | 32 | 1 | 0 | No | No |
| 18022417 | Method of cleaning a Group III-nitride single crystal substrate comprising cleaning a nitrogen-polar face with a detergent including a fluoroorganic compound | February 2023 | July 2023 | Allow | 5 | 0 | 0 | No | No |
| 18169883 | Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal | February 2023 | November 2023 | Allow | 9 | 1 | 0 | No | No |
| 18040128 | ANTI-CRACKING SUCTION DEVICE COMPRISING OUTER CYLINDER, INNER CYLINDER, SUCTION TUBE, AND FIRST GAP BETWEEN INNER AND OUTER CYLINDERS | January 2023 | July 2025 | Allow | 30 | 1 | 0 | No | No |
| 18007486 | METHOD FOR SUPPLEMENTARY DOPING OF MONOCRYSTALLINE SILICON BY LOWERING A DEVICE COMPRISING A CONTAINING MEMBER PROVIDED WITH FIRST AND SECOND THROUGH-HOLES | January 2023 | July 2025 | Allow | 30 | 2 | 1 | No | No |
| 18040077 | WATER-COOLED SCREEN FOR IMPROVING PULLING RATE OF SILICON CRYSTAL AND MOULD FOR PREPARING THE SAME | January 2023 | November 2025 | Abandon | 34 | 2 | 1 | No | No |
| 18040114 | HEAT LEAKAGE PREVENTION DEVICE AND SINGLE CRYSTAL FURNACE SYSTEM | January 2023 | September 2025 | Allow | 32 | 1 | 0 | No | No |
| 18018188 | QUARTZ GLASS CRUCIBLE FOR GROWING A SINGLE CRYSTAL SILICON INGOT BY A CZOCHRALSKI (CZ) METHOD | January 2023 | May 2025 | Allow | 27 | 2 | 0 | No | No |
| 18018165 | CZ CRUCIBLE WITH A GAP BETWEEN AN INNER QUARTZ CRUCIBLE AND AN OUTER GRAPHITE CRUCIBLE | January 2023 | April 2025 | Allow | 27 | 2 | 0 | No | No |
| 18006810 | method of forming a halide perovskite crystal by dispersing a halide perovskite material into a solution, forming a metastable intermediate phase, and transitioning to a halide perovskite crystal film | January 2023 | September 2025 | Allow | 32 | 2 | 0 | No | No |
| 18156885 | APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYSTALS IN MULTIPLE INDEPENDENT CRUCIBLES ARRANGED LINEARLY | January 2023 | July 2025 | Allow | 30 | 2 | 1 | No | No |
| 18097600 | Method for preparing a self-supporting substrate from a film base structure comprising a first substrate layer, a first film layer, and a second substrate layer | January 2023 | March 2025 | Allow | 26 | 2 | 0 | No | No |
| 18068980 | A METHOD FOR SIMULTANEOUSLY MANUFACTURING MORE THAN ONE SINGLE CRYSTAL OF A SEMICONDUCTOR MATERIAL BY PHYSICAL VAPOR TRANSPORT | December 2022 | July 2024 | Allow | 19 | 1 | 0 | No | No |
| 18082904 | Method for Manufacturing Epitaxial Films with Multiple Stress States | December 2022 | October 2025 | Abandon | 34 | 2 | 1 | No | Yes |
| 17928391 | SILICON CARBIDE INGOT MANUFACTURING METHOD, SILICON CARBIDE INGOTS, AND GROWTH SYSTEM THEREFOR | November 2022 | May 2025 | Abandon | 30 | 2 | 0 | No | No |
| 18071117 | METHODS FOR PRODUCING 2D MATERIALS BY MOVING FORMING LAYERS DISPOSED ON CARRIERS THROUGH A REACTION CHAMBER OPEN TO THE ATMOSPHERE | November 2022 | August 2024 | Allow | 21 | 1 | 0 | No | No |
| 17992819 | METHOD OF SELECTIVELY CONTROLLING NUCLEATION FOR CRYSTALLINE COMPOUND FORMATION BY IRRADIATING A PRECURSOR WITH A PULSED ENERGY SOURCE | November 2022 | February 2024 | Allow | 15 | 2 | 0 | No | No |
| 18054439 | Method of preparing a silicon carbide crystal by deposition onto at least a pair of conductive heating elements | November 2022 | February 2025 | Allow | 27 | 2 | 1 | No | No |
| 17919194 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATES AND METHOD FOR SUPPRESSING INTRODUCTION OF DISPLACEMENT TO GROWTH LAYER | October 2022 | September 2025 | Allow | 35 | 1 | 1 | No | No |
| 17996091 | METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE AND METHOD FOR SUPPRESSING OCCURRENCE OF CRACKS IN A GROWTH LAYER | October 2022 | October 2025 | Allow | 36 | 1 | 1 | No | No |
| 17996184 | METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE BY FORMING A GROWTH LAYER ON AN UNDERLYING SUBSTRATE HAVING THROUGH HOLES | October 2022 | June 2025 | Allow | 33 | 2 | 1 | No | No |
| 17995989 | BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL, FARADAY ROTATOR, OPTICAL ISOLATOR, AND METHOD FOR PRODUCING BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET SINGLE CRYSTAL | October 2022 | March 2024 | Allow | 18 | 0 | 0 | No | No |
| 17917721 | METHOD OF MANUFACTURING A BETA-Ga2O3-BASED SINGLE CRYSTAL FILM BY FLOWING A Ga CHLORIDE GAS, AN OXYGEN GAS, AND A DOPANT GAS | October 2022 | October 2024 | Allow | 24 | 2 | 0 | No | No |
| 17914720 | Heater In Hot-Zone of Single Crystal Pulling Apparatus and Single Crystal Pulling Apparatus | September 2022 | July 2025 | Allow | 34 | 3 | 0 | No | No |
| 17912437 | SYSTEM FOR PRODUCING OZONE-INFUSED CRYSTALLINE SOLIDS | September 2022 | November 2025 | Allow | 38 | 1 | 1 | No | No |
| 17897685 | INGOT PULLER APPARATUS THAT AXIALLY POSITION MAGNETIC POLES | August 2022 | October 2025 | Allow | 38 | 1 | 1 | No | No |
| 17907875 | SINGLE-CRYSTAL PULLING APPARATUS WITH SADDLE-SHAPED SUPERCONDUCTING COILS AND SINGLE-CRYSTAL PULLING METHOD | August 2022 | July 2024 | Allow | 23 | 1 | 0 | No | No |
| 17897677 | SYNTHETIC CRUCIBLES WITH RIM COATING | August 2022 | January 2026 | Allow | 41 | 5 | 1 | No | No |
| 17905125 | METHOD FOR PRODUCING A LAYER OF ALUMINUM NITRIDE (ALN) ON A STRUCTURE OF SILICON OR III-V MATERIALS | August 2022 | February 2025 | Allow | 30 | 2 | 0 | Yes | No |
| 17801198 | ACTIVE EDGE CONTROL OF A CRYSTALLINE SHEET FORMED ON THE SURFACE OF A MELT | August 2022 | July 2025 | Allow | 35 | 3 | 0 | No | No |
| 17886986 | FILM FORMATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | August 2022 | May 2025 | Abandon | 33 | 2 | 1 | Yes | No |
| 17819409 | METHOD OF FORMING MONOCRYSTALLINE NICKEL-TITANIUM FILMS ON SINGLE CRYSTAL SILICON SUBSTRATES USING SEED LAYERS | August 2022 | August 2024 | Allow | 24 | 1 | 1 | Yes | No |
| 17799083 | GALLIUM NITRIDE VAPOR PHASE EPITAXY APPARATUS USED IN VAPOR PHASE EPITAXY NOT USING ORGANIC METAL AS A GALLIUM RAW MATERIAL AND MANUFACTURING METHOD THEREFOR | August 2022 | September 2023 | Allow | 13 | 1 | 0 | No | No |
| 17818384 | METHOD OF DEPOSITING GA2O3 CRYSTAL FILM ACCORDING TO HYDRIDE VAPOR PHASE EPITAXY BY SUPPLYING GACL GAS, OXYGEN, AND HCL GAS | August 2022 | May 2025 | Allow | 34 | 3 | 1 | Yes | No |
| 17878794 | INGOT PULLER APPARATUS HAVING COOLING JACKET DEVICE WITH COOLING FLUID TUBES | August 2022 | June 2024 | Allow | 23 | 1 | 0 | No | No |
| 17794039 | A METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL DOPED WITH NITROGEN AND HAVING A CONTROLLED AMOUNT OF CARBON IMPURITIES | July 2022 | May 2024 | Allow | 22 | 1 | 0 | No | No |
| 17790913 | QUARTZ GLASS CRUCIBLE WITH CRYSTALLIZATION-ACCELERATOR-CONTAINING LAYER HAVING GRADIENT CONCENTRATION | July 2022 | May 2024 | Allow | 22 | 1 | 0 | No | No |
| 17849761 | STRAINED DIAMOND GROWING AND DOPING METHOD BASED ON CHEMICAL VAPOR DEPOSITION (CVD) METHOD | June 2022 | October 2022 | Allow | 4 | 0 | 0 | No | No |
| 17848927 | Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate | June 2022 | October 2023 | Allow | 16 | 0 | 1 | No | No |
| 17849579 | METHOD OF PROVIDING A WRINKLE PATTERN OR PRODUCING A SUBSTRATE HAVING A WRINKLE PATTERN OF A SINGLE LAYER | June 2022 | July 2024 | Allow | 24 | 2 | 0 | No | No |
| 17788568 | Method for manufacturing monocrystalline silicon by the Czochralski process by pulling a first straight body having a first diameter and a second straight body having a second diameter larger than the first diameter | June 2022 | February 2025 | Allow | 32 | 1 | 1 | No | No |
| 17846768 | A MANUFACTURING METHOD FOR A GROUP-III NITRIDE CRYSTAL THAT REQUIRES A FLOW AMOUNT OF A CARRIER GAS SUPPLIED INTO A RAW MATERIAL CHAMBER AT A TEMPERATURE INCREASE STEP SATISFIES TWO RELATIONAL EQUATIONS (I) AND (II) | June 2022 | October 2023 | Allow | 16 | 1 | 0 | Yes | No |
| 17845837 | Method for protecting a lunar material within a gemstone by synthetically growing the gemstone onto and around the lunar material | June 2022 | September 2025 | Allow | 39 | 2 | 0 | Yes | Yes |
| 17844148 | A METHOD FOR REDUCING LATERAL GROWTH OF GaN CRYSTALS IN AN AMMONOTHERMAL CRYSTAL GROWING PROCESS | June 2022 | September 2023 | Allow | 15 | 1 | 0 | No | No |
| 17786794 | Cylinder assembly for improving region of defect-free growth of crystal ingot for single crystal pulling apparatus and single crystal pulling apparatus | June 2022 | July 2024 | Allow | 25 | 1 | 0 | No | No |
| 17785583 | Apparatus for manufacturing a single crystal by the Czochralski method comprising a cooling cylinder with an auxiliary cooling cylinder fitted inside the cooling cylinder | June 2022 | April 2024 | Allow | 22 | 1 | 0 | No | No |
| 17834807 | METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITIONS FOR PRODUCING SUBSTRATES FOR EPITAXY | June 2022 | December 2024 | Allow | 30 | 1 | 1 | No | No |
| 17776511 | SUBSTRATE DIRECTED SYNTHESIS OF TRANSITION-METAL DICHALCOGENIDE CRYSTALS WITH TUNABLE DIMENSIONALITY AND OPTICAL PROPERTIES | May 2022 | December 2024 | Abandon | 31 | 1 | 1 | No | No |
| 17662099 | Methods for preparing a monolayer or few-layer crystalline black phosphorous film on a two-dimensional surface by focusing a pulsed laser beam on a black phosphorous target | May 2022 | October 2023 | Allow | 17 | 1 | 1 | No | No |
| 17661389 | Method for heating a wide bandgap substrate by providing a resistive heating element which emits radiative heat in a mid-infrared band | April 2022 | January 2023 | Allow | 9 | 0 | 1 | No | No |
| 17772895 | Method of producing a silicon single crystal based on concentration profiles of vacancies and interstitial silicon atoms during pulling of a silicon single crystal by the Czochralski process | April 2022 | January 2025 | Allow | 33 | 1 | 0 | Yes | No |
| 17771875 | METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE BY IRRADIATING A SURFACE OF A GROUP III NITRIDE SEMICONDUCTOR LAYER WITH ULTRAVIOLET LIGHT IN AN ATMOSPHERE CONTAINING OXYGEN | April 2022 | February 2026 | Allow | 45 | 3 | 1 | No | No |
| 17659113 | APPARATUS FOR DETECTING FACET REGION OF SIC INGOT | April 2022 | March 2025 | Abandon | 35 | 2 | 1 | Yes | No |
| 17765476 | METHOD FOR REDUCING STRUCTURAL DAMAGE TO THE SURFACE OF MONOCRYSTALLINE ALUMINIUM-NITRIDE SUBSTRATES, AND MONOCRYSTALLINE ALUMINIUM-NITRIDE SUBSTRATES THAT CAN BE PRODUCED BY A METHOD OF THIS TYPE | March 2022 | March 2026 | Abandon | 47 | 4 | 0 | Yes | No |
| 17699566 | METHODS, SYSTEMS, AND APPARATUSES FOR A REACTOR | March 2022 | June 2023 | Abandon | 14 | 1 | 0 | No | No |
| 17761607 | Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate | March 2022 | February 2024 | Allow | 23 | 2 | 1 | No | No |
| 17640054 | INHIBITING DRIPPED GRANULAR DOPANT FROM ADHEREING TO A GROWING SILICON SINGLE CRYSTAL BEFORE THE DOPANT MELTS | March 2022 | September 2024 | Allow | 30 | 2 | 0 | No | No |
| 17636370 | Method for producing semiconductor wafers of monocrystalline silicon by pulling a single silicon crystal from a melt contained in a crucible and continually changing the rotational direction of the crucible | February 2022 | October 2023 | Allow | 20 | 0 | 0 | No | No |
| 17650672 | METHOD FOR PRODUCING an a- or B-GALLIUM OXIDE CRYSTAL BY BRING AN AQUEOUS SOLUTION INCLUDING GA IONS INTO A SUPERCRITICAL STATE | February 2022 | August 2024 | Allow | 30 | 3 | 0 | Yes | No |
| 17633096 | METHOD FOR PRODUCING A SIC SEED CRYSTAL FOR GROWTH OF A SIC INGOT BY HEAT-TREATING IN A MAIN CONTAINER MADE OF A SIC MATERIAL | February 2022 | January 2025 | Allow | 36 | 1 | 1 | No | No |
| 17633118 | Method for producing a SiC substrate via an etching step, growth step, and peeling step | February 2022 | July 2024 | Allow | 29 | 4 | 0 | Yes | No |
| 17582613 | APPARATUS FOR FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW-VAPOR PRESSURE METALORGANIC PRECURSORS IN CVD REACTORS WITH TEMPERATURE-CONTROLLED INJECTOR COLUMNS AND METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING THE SAME | January 2022 | January 2025 | Abandon | 36 | 2 | 1 | No | No |
| 17628745 | Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate | January 2022 | November 2023 | Allow | 22 | 1 | 1 | No | No |
| 17628505 | Method for Growing Rare Earth Oxide Crystal on a Semiconductor Substrate | January 2022 | November 2023 | Allow | 22 | 2 | 0 | No | No |
| 17627412 | SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, MANUFACTURING METHOD FOR SILICON INGOT, AND SOLAR CELL | January 2022 | December 2024 | Abandon | 35 | 0 | 1 | No | No |
| 17576784 | DEPOSITION OF ALPHA-GALLIUM OXIDE THIN FILMS | January 2022 | September 2023 | Abandon | 20 | 1 | 1 | No | No |
| 17573748 | EPITAXIAL METHODS INCLUDING A HALOBORANE FORMULA FOR GROWING BORON-CONTAINING STRUCTURES HAVING INCREASED BORON CONCENTRATIONS | January 2022 | August 2025 | Allow | 43 | 4 | 1 | Yes | No |
| 17646062 | SiC growth apparatus comprised of a base having a plurality of graphite plates having anisotropy of a thermal expansion coefficient and method of manufacturing a SiC crystal using the apparatus | December 2021 | March 2023 | Allow | 15 | 1 | 0 | No | No |
| 17562438 | CRUCIBLE HAVING AN IMPROVED CRYSTAL GROWTH BASE FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF USE | December 2021 | March 2023 | Allow | 15 | 1 | 0 | No | No |
| 17555680 | PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL CAPABLE OF PREVENTING HARMFUL SUBSTANCES FORMED IN FURNACE FROM BEING DIFFUSED TO SURROUNDINGS OF FURNACE | December 2021 | July 2023 | Allow | 19 | 2 | 0 | No | No |
| 17555660 | NANOCOMPOSITE-SEEDED EPITAXIAL GROWTH OF SINGLE-DOMAIN LITHIUM NIOBATE THIN FILMS FOR SURFACE ACOUSTIC WAVE DEVICES | December 2021 | April 2023 | Allow | 16 | 1 | 1 | No | No |
| 17552524 | Kinetic Model for Molecular Beam Epitaxy Growth of III-V Bismide Alloys | December 2021 | March 2025 | Allow | 39 | 2 | 1 | Yes | No |
| 17619064 | METHOD FOR PRODUCING SILICON SEMICONDUCTOR WAFERS HAVING LOW CONCENTRATIONS OF PINHOLES | December 2021 | August 2025 | Allow | 44 | 2 | 1 | No | Yes |
| 17547730 | METHOD FOR PREPARING AN OPTICAL ZNS MATERIAL FROM ZINC AND SULFUR RAW MATERIAL SOURCES BY USING A FEEDING DEVICE TO REPLENISH THE SULFUR RAW MATERIAL SOURCE | December 2021 | June 2023 | Allow | 18 | 1 | 1 | No | No |
| 17615877 | ANISOTROPIC EPITAXIAL GROWTH OF SILICON GERMANIUM | December 2021 | March 2026 | Allow | 51 | 4 | 0 | Yes | Yes |
This analysis examines appeal outcomes and the strategic value of filing appeals for examiner BRATLAND JR, KENNETH A.
With a 35.3% reversal rate, the PTAB reverses the examiner's rejections in a meaningful percentage of cases. This reversal rate is above the USPTO average, indicating that appeals have better success here than typical.
Filing a Notice of Appeal can sometimes lead to allowance even before the appeal is fully briefed or decided by the PTAB. This occurs when the examiner or their supervisor reconsiders the rejection during the mandatory appeal conference (MPEP § 1207.01) after the appeal is filed.
In this dataset, 41.8% of applications that filed an appeal were subsequently allowed. This appeal filing benefit rate is above the USPTO average, suggesting that filing an appeal can be an effective strategy for prompting reconsideration.
✓ Appeals to PTAB show good success rates. If you have a strong case on the merits, consider fully prosecuting the appeal to a Board decision.
✓ Filing a Notice of Appeal is strategically valuable. The act of filing often prompts favorable reconsideration during the mandatory appeal conference.
Examiner BRATLAND JR, KENNETH A works in Art Unit 1714 and has examined 827 patent applications in our dataset. With an allowance rate of 54.4%, this examiner allows applications at a lower rate than most examiners at the USPTO. Applications typically reach final disposition in approximately 36 months.
Examiner BRATLAND JR, KENNETH A's allowance rate of 54.4% places them in the 15% percentile among all USPTO examiners. This examiner is less likely to allow applications than most examiners at the USPTO.
On average, applications examined by BRATLAND JR, KENNETH A receive 2.54 office actions before reaching final disposition. This places the examiner in the 74% percentile for office actions issued. This examiner issues a slightly above-average number of office actions.
The median time to disposition (half-life) for applications examined by BRATLAND JR, KENNETH A is 36 months. This places the examiner in the 35% percentile for prosecution speed. Prosecution timelines are slightly slower than average with this examiner.
Conducting an examiner interview provides a +19.3% benefit to allowance rate for applications examined by BRATLAND JR, KENNETH A. This interview benefit is in the 62% percentile among all examiners. Recommendation: Interviews provide an above-average benefit with this examiner and are worth considering.
When applicants file an RCE with this examiner, 16.6% of applications are subsequently allowed. This success rate is in the 13% percentile among all examiners. Strategic Insight: RCEs show lower effectiveness with this examiner compared to others. Consider whether a continuation application might be more strategic, especially if you need to add new matter or significantly broaden claims.
This examiner enters after-final amendments leading to allowance in 25.6% of cases where such amendments are filed. This entry rate is in the 35% percentile among all examiners. Strategic Recommendation: This examiner shows below-average receptiveness to after-final amendments. You may need to file an RCE or appeal rather than relying on after-final amendment entry.
When applicants request a pre-appeal conference (PAC) with this examiner, 29.6% result in withdrawal of the rejection or reopening of prosecution. This success rate is in the 31% percentile among all examiners. Note: Pre-appeal conferences show below-average success with this examiner. Consider whether your arguments are strong enough to warrant a PAC request.
This examiner withdraws rejections or reopens prosecution in 57.0% of appeals filed. This is in the 29% percentile among all examiners. Of these withdrawals, 20.0% occur early in the appeal process (after Notice of Appeal but before Appeal Brief). Strategic Insight: This examiner shows below-average willingness to reconsider rejections during appeals. Be prepared to fully prosecute appeals if filed.
When applicants file petitions regarding this examiner's actions, 49.1% are granted (fully or in part). This grant rate is in the 45% percentile among all examiners. Strategic Note: Petitions show below-average success regarding this examiner's actions. Ensure you have a strong procedural basis before filing.
Examiner's Amendments: This examiner makes examiner's amendments in 0.2% of allowed cases (in the 54% percentile). This examiner makes examiner's amendments more often than average to place applications in condition for allowance (MPEP § 1302.04).
Quayle Actions: This examiner issues Ex Parte Quayle actions in 4.9% of allowed cases (in the 80% percentile). Per MPEP § 714.14, a Quayle action indicates that all claims are allowable but formal matters remain. This examiner frequently uses Quayle actions compared to other examiners, which is a positive indicator that once substantive issues are resolved, allowance follows quickly.
Based on the statistical analysis of this examiner's prosecution patterns, here are tailored strategic recommendations:
Not Legal Advice: The information provided in this report is for informational purposes only and does not constitute legal advice. You should consult with a qualified patent attorney or agent for advice specific to your situation.
No Guarantees: We do not provide any guarantees as to the accuracy, completeness, or timeliness of the statistics presented above. Patent prosecution statistics are derived from publicly available USPTO data and are subject to data quality limitations, processing errors, and changes in USPTO practices over time.
Limitation of Liability: Under no circumstances will IronCrow AI be liable for any outcome, decision, or action resulting from your reliance on the statistics, analysis, or recommendations presented in this report. Past prosecution patterns do not guarantee future results.
Use at Your Own Risk: While we strive to provide accurate and useful prosecution statistics, you should independently verify any information that is material to your prosecution strategy and use your professional judgment in all patent prosecution matters.